Researcher profile

A. N. Semenov

A. N. Semenov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Spatial correlation functions for non-ergodic stochastic processes of macroscopic system

Focusing on non-ergodic macroscopic systems we reconsider the variances of time averages time-series. The total variance (direct average over all time-series) is known to be the sum of an internal variance (fluctuations within the meta-basins) and an external variance (fluctuations between meta-basins). It is shown that whenever the time-averaged observable can be expressed as a volume average of a local field the three variances can be written as volume averages of correlation functions with the total correlation function being the sum of an internal and an external correlation function. The dependences of the the different variancescan thus be traced back to the internal and the external correlation function. Various relations are illustrated using lattice spring models with spatially correlated spring constants.

preprint2013arXiv

Electrical anisotropy of heteroepitaxial InSb/GaAs layers

We report on study of electrical and structural properties of InSb/GaAs(001) heteroepitaxial layers in [110] and [1-10] crystallographic directions. Strong anisotropy of electron transport parameters measured at a low magnetic field has been found, whereas the electrical transport through the InSb bulk layer studied by Shubnikov-de Haas oscillations is shown to be independent of the crystallographic directions. The low-field electrical anisotropy of the InSb films appears to be governed by two competitive anisotropic effects: influence of spontaneously formed In nanoclusters inhomogeneously distributed within the InSb layers and conductivity through the near-interface layer with high anisotropic density of extended defects.

preprint2011arXiv

Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.