Researcher profile

S. V. Bakhlanov

S. V. Bakhlanov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

Influence of α-particles irradiation on the performance and defect levels structure of Al/SiO2/p-type Si surface barrier detector

Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*10^9 α-particles, an increase of α-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*10^12 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming α-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors.

preprint2021arXiv

Precision measurement of $^{\mathbf{210}}$Bi $β$-spectrum

The precision measurement of the $β-$spectrum shape for $^{210}$Bi (historically RaE) have been performed with a spectrometer based on semiconductor Si(Li) detector. This first forbidden non-unique transition has the transition form-factor strongly deviated from unity and knowledge of its spectrum would play an important role in low-background physics in presence of $^{210}$Pb background. The measured transition form-factor could be approximated as $S(W) = 1 + (-0.4363 \pm 0.0037) W + (0.0523 \pm 0.0010) W^2$, that is in good agreement with previous studies and has significantly increased parameter precision.

preprint2020arXiv

New limits on the resonant absorption of solar axions obtained with a $^{169}$Tm-containing cryogenic detector

A search for resonant absorption of solar axions by $^{169}$Tm nuclei was carried out. A newly developed approach involving low-background cryogenic bolometer based on Tm$_3$Al$_5$O$_{12}$ crystal was used that allowed for significant improvement of sensitivity in comparison with previous $^{169}$Tm based experiments. The measurements performed with $8.18$ g crystal during $6.6$ days exposure yielded the following limits on axion couplings: $|g_{Aγ} (g_{AN}^0 + g_{AN}^3) \leq 1.44 \times 10^{-14}$ GeV$^{-1}$ and $|g_{Ae} (g_{AN}^0 + g_{AN}^3) \leq 2.81 \times 10^{-16}$.