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S. Schwarz

S. Schwarz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallnucl-exphysics.opticscond-mat.mtrl-scinucl-thphysics.acc-phphysics.app-ph

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Published work

16 published item(s)

preprint2022arXiv

Identification of a potential ultra-low Q value electron capture decay branch in $^{75}$Se via a precise Penning trap measurement of the mass of $^{75}$As

Background: Low energy $β$ and electron capture (EC) decays are important systems in neutrino mass determination experiments. An isotope with an ultra-low Q value $β$-decay to an excited state in the daughter with Qes < 1 keV could provide a promising alternative candidate for future experiments. $^{75}$Se EC and $^{75}$Ge $β$-decay represent such candidates, but a more precise determination of the mass of the common daughter, $^{75}$As, is required to evaluate whether their potential decay branches are energetically allowed and ultra-low. Purpose: Perform a precise atomic mass measurement of $^{75}$As and combine the result with the precisely known atomic masses of $^{75}$Se and $^{75}$Ge, along with nuclear energy level data for $^{75}$As to evaluate potential ultra-low Q value decay branches in the EC decay of $^{75}$Se and the $β$-decay of $^{75}$Ge. Method: The LEBIT Penning trap mass spectrometer at the Facility for Rare Isotope Beams was used to perform a high-precision measurement of the atomic mass of $^{75}$As via cyclotron frequency ratio measurements of $^{75}$As$^{+}$ to a $^{12}$C$_{6}^{+}$ reference ion. Results: The $^{75}$As mass excess was determined to be ME($^{75}$As)= -73 035.98(43) keV, from which the ground-state to ground-state Q values for $^{75}$Se EC and $^{75}$Ge $β$-decay were determined to be 866.50(44) keV and 1179.01(44) keV, respectively. These results were compared to energies of excited states in $^{75}$As at 865.4(5) keV and 1172.0(6) keV to determine Q values of 1.1(7) keV and 7.0(7) keV for the potential ultra-low EC and $β$-decay branches of $^{75}$Se and $^{75}$Ge, respectively. Conclusion: The $^{75}$Se EC decay to the 865.4 keV excited state in $^{75}$As is potentially ultra-low with Qes $\approx$ 1 keV. However, a more precise determination of the 865.4(5) keV level in $^{75}$As is required.

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preprint2021arXiv

Improved Nuclear Physics Near $A=61$ Refines Urca Neutrino Luminosities in Accreted Neutron Star Crusts

We performed a Penning trap mass measurement of $^{61}{\rm Zn}$ at the National Superconducting Cyclotron Laboratory and NuShellX calculations of the $^{61}{\rm Zn}$ and $^{62}{\rm Ga}$ structure using the GXPF1A Hamiltonian to obtain improved estimates of the $^{61}{\rm Zn}(p,γ)^{62}{\rm Ga}$ and $^{60}{\rm Cu}(p,γ)^{61}{\rm Zn}$ reaction rates. Surveying astrophysical conditions for type-I X-ray bursts with the code MESA, implementing our improved reaction rates, and taking into account updated nuclear masses for $^{61}{\rm V}$ and $^{61}{\rm Cr}$ from the recent literature, we refine the neutrino luminosity from the important mass number $A=61$ urca cooling source in accreted neutron star crusts. This improves our understanding of the thermal barrier between deep heating in the crust and the shallow depths where extra heat is needed to explain X-ray superbursts, as well as the expected signature of crust urca neutrino emission in light curves of cooling transients.

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preprint2020arXiv

Electrically pumped WSe$_2$-based light-emitting van der Waals heterostructures embedded in monolithic dielectric microcavities

Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting transition metal dichalcogenides allows fabrication of electroluminescence (EL) devices, compatible with a wide range of substrates. Here, we demonstrate a full integration of an electroluminescent van der Waals heterostructure in a monolithic optical microcavity made of two high reflectivity dielectric distributed Bragg reflectors (DBRs). Owing to the presence of graphene and hexagonal boron nitride protecting the WSe$_2$ during the top mirror deposition, we fully preserve the optoelectronic behaviour of the device. Two bright cavity modes appear in the EL spectrum featuring Q-factors of 250 and 580 respectively: the first is attributed directly to the monolayer area, while the second is ascribed to the portion of emission guided outside the WSe$_2$ island. By embedding the EL device inside the microcavity structure, a significant modification of the directionality of the emitted light is achieved, with the peak intensity increasing by nearly two orders of magnitude at the angle of the maximum emission compared with the same EL device without the top DBR. Furthermore, the coupling of the WSe$_2$ EL to the cavity mode with a dispersion allows a tuning of the peak emission wavelength exceeding 35 nm (80 meV) by varying the angle at which the EL is observed from the microcavity. This work provides a route for the development of compact vertical-cavity surface-emitting devices based on van der Waals heterostructures.

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preprint2020arXiv

First Penning trap mass measurement of $^{36}$Ca

Isobaric quintets provide the best test of the isobaric multiplet mass equation (IMME) and can uniquely identify higher order corrections suggestive of isospin symmetry breaking effects in the nuclear Hamiltonian. The Generalized IMME (GIMME) is a novel microscopic interaction theory that predicts an extension to the quadratic form of the IMME. Only the $A=20, 32$ $T=2$ quintets have the exotic $T_z = -2$ member ground state mass determined to high-precision by Penning trap mass spectrometry. In this work, we establish $A=36$ as the third high-precision $T=2$ isobaric quintet with the $T_z = -2$ member ground state mass measured by Penning trap mass spectrometry and provide the first test of the predictive power of the GIMME. A radioactive beam of neutron-deficient $^{36}$Ca was produced by projectile fragmentation at the National Superconducting Cyclotron Laboratory. The beam was thermalized and the mass of $^{36}$Ca$^+$ and $^{36}$Ca$^{2+}$ measured by the Time of Flight - Ion Cyclotron Resonance method in the LEBIT 9.4 T Penning trap. We measure the mass excess of $^{36}$Ca to be ME$ = -6483.6(56)$ keV, an improvement in precision by a factor of 6 over the literature value. The new datum is considered together with evaluated nuclear data on the $A=36$, $T=2$ quintet. We find agreement with the quadratic form of the IMME given by isospin symmetry, but only coarse qualitative agreement with predictions of the GIMME. A total of three isobaric quintets have their most exotic members measured by Penning trap mass spectrometry. The GIMME predictions in the $T = 2$ quintet appear to break down for $A = 32$ and greater.

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preprint2020arXiv

High precision mass measurements of the isomeric and ground states of $^{44}$V: improving constraints on the IMME parameters of the A=44, $\text{0}^{\text{+}}$ quintet

The Isobaric Multiplet Mass Equation (IMME) has been successful at predicting the masses of isobaric analogue states in the same multiplet, while its coefficients are known to follow trends as functions of mass number. The Atomic Mass Evaluation 2016 [Chin. Phys. C 41, 030003 (2017)] $^{44}$V mass value results in an negative $c$ coefficient for the IMME quadratic term. The $b$ and $c$ coefficients can provide constraints for construction of the isospin-nonconserving (INC) Hamiltonians for the $pf$ shell. The excitation energy of the $0^+, T=2$ level in $^{44}$V is currently unknown and can be used to constrain the $^{44}$Cr mass. The aim of the experiment was to perform high-precision mass measurements to resolve the difference between $^{44}$V isomeric and ground states, to test the IMME, and to provide ingredients for identifying the $0^+$, $T=2$ state in $^{44}$V. High-precision Penning trap mass spectrometry was performed at LEBIT, to measure the cyclotron frequency ratios of [$^{44g,m}$VO]$^+$ versus [$^{32}$SCO]$^+$, a reference mass, to extract both the isomeric and ground state masses of $^{44}$V. The mass excess of the ground and isomeric states in $^{44}$V were measured to be $-23\ 804.9(80)$ keV/$\text{c}^2$ and $-23\ 537.0(55)$ keV/$\text{c}^2$. This yielded a new proton separation energy of $S_p$ = 1\ 773(10) keV. The new mass values of $^{44}$V have been used to deduce the IMME $b$ and $c$ coefficients of the lowest $2^+$ and $6^+$ triplets in $A=44$. The $2^+$ $c$ coefficient is verified with the IMME trend and agrees with the shell-model predictions using charge-dependent Hamiltonians. The mirror energy differences were determined between $^{44}$V and $^{44}$Sc, in line with isospin-symmetry. The new value of the proton separation energy determined will be important for the determination of the $0^+$, $T=2$ state in $^{44}$V and for prediction of the mass of $^{44}$Cr.

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preprint2016arXiv

Electrically pumped single-defect light emitters in WSe$_2$

Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a monolayer WSe$_2$, and also comprising boron nitride tunnelling barriers and graphene electrodes, and observe sharp luminescence spectra from individual defects in WSe$_2$ under both optical and electrical excitation. This paves the way towards the realization of electrically-pumped quantum emitters in atomically thin semiconductors. In addition we demonstrate tuning by more than 1 meV of the emission energy of the defect luminescence by applying a vertical electric field. This provides an estimate of the permanent electric dipole created by the corresponding electron-hole pair. The light-emitting devices investigated in our work can be assembled on a variety of substrates enabling a route to integration of electrically pumped single quantum emitters with existing technologies in nano-photonics and optoelectronics.

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preprint2016arXiv

Status of the NSCL Cyclotron Gas Stopper

A gas-filled reverse cyclotron for the thermalisation of energetic beams is under construction at NSCL/MSU. Rare isotopes produced via projectile fragmentation after in-flight separation will be injected into the device and converted into low-energy beams through buffer gas interactions as they spiral towards the centre of the device. The extracted thermal beams will be used for low energy experiments such as precision mass measurements with traps or laser spectroscopy, and further transport for reacceleration. Detailed calculations have been performed to optimize the magnetic field design as well as the transport and stopping of ions inside the gas. An RF carpet will be used to transport the thermal ions to the axial extraction point. The calculations indicate that the cyclotron gas stopper will be much more efficient for the thermalisation of light and medium mass ions compared to linear gas cells. In this contribution we will discuss simulations of the overall performance and acceptance of machine, the beam matching calculations to the fragment separator emittance, and the construction status.

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preprint2016arXiv

Valley addressable exciton-polaritons in atomically thin semiconductors

While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of information. In transition metal dichalcogenide (TMD) monolayers, where spin-valley locking is present, strong retention of valley chirality has been reported for MoS$_2$, WSe$_2$ and WS$_2$ while MoSe$_2$ shows anomalously low valley polarisation retention. In this work, chiral selectivity of MoSe$_2$ cavity polaritons under helical excitation is reported with a polarisation degree that can be controlled by the exciton-cavity detuning. In contrast to the very low circular polarisation degrees seen in MoSe$_2$ exciton and trion resonances, we observe a significant enhancement of up to 7 times when in the polaritonic regime. Here, polaritons introduce a fast decay mechanism which inhibits full valley pseudospin relaxation and thus allows for increased retention of injected polarisation in the emitted light. A dynamical model applicable to cavity-polaritons in any TMD semiconductor, reproduces the detuning dependence through the incorporation of the cavity-modified exciton relaxation, allowing an estimate of the spin relaxation time in MoSe$_2$ which is an order of magnitude faster than those reported in other TMDs. The valley addressable exciton-polaritons reported here offer robust valley polarised states demonstrating the prospect of valleytronic devices based upon TMDs embedded in photonic structures, with significant potential for valley-dependent nonlinear polariton-polariton interactions.

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preprint2015arXiv

Exciton-polaritons in van der Waals heterostructures embedded in tunable microcavities

Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for control of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microcavity. Part-light-part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe$_2$ excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe$_2$ monolayer QW, enhanced to 29 meV in MoSe$_2$/hBN/MoSe$_2$ double-QWs. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room temperature polaritonic devices based on multiple-QW VDW heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realised.

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preprint2015arXiv

First direct determination of the superallowed $β$-decay $Q_{EC}$-value for $^{14}$O

We report the first direct measurement of the $^{14}\text{O}$ superallowed Fermi $β$-decay $Q_{EC}$-value, the last of the so-called "traditional nine" superallowed Fermi $β$-decays to be measured with Penning trap mass spectrometry. $^{14}$O, along with the other low-$Z$ superallowed $β$-emitter, $^{10}$C, is crucial for setting limits on the existence of possible scalar currents. The new ground state $Q_{EC}$ value, 5144.364(25) keV, when combined with the energy of the $0^+$ daughter state, $E_x(0^+)=2312.798(11)$~keV [Nucl. Phys. A {\bf{523}}, 1 (1991)], provides a new determination of the superallowed $β$-decay $Q_{EC}$ value, $Q_{EC}(\text{sa}) = 2831.566(28)$ keV, with an order of magnitude improvement in precision, and a similar improvement to the calculated statistical rate function $f$. This is used to calculate an improved $\mathcal{F}t$-value of 3073.8(2.8) s.

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preprint2015arXiv

Optical properties of two-dimensional gallium chalcogenide films

Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.

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preprint2015arXiv

Photoluminescence and Raman investigation of stability of InSe and GaSe thin films

Layered III-chalcogenide compounds belong to a variety of layered crystals that can be implemented in van der Waals heterostructures. Here we report an optical study of the stability of two of these compounds: indium selenide (InSe) and gallium selenide (GaSe). Micro-photoluminescence (PL) and Raman spectroscopy are used to determine how the properties of thin films of these materials change when they are exposed to air at room temperature. We find that in GaSe films, PL signal decreases on average below 50% over 24 (72) hours of exposure for films with thicknesses 10-25 (48-75) nm. In contrast, weak PL decrease of less than 20% is observed for InSe nm films after exposure of 100 hours. Similar trends are observed in Raman spectroscopy: within a week, the Raman signal decreases by a factor of 10 for a 24 nm thick GaSe, whereas no decrease was found for a 16 nm InSe film. We estimate that when exposed to air, the layers adjacent to the GaSe film surface degrade and become non-luminescent with a rate of 0.14$\pm$0.05 nm/hour. We show that the life-time of the GaSe films can be increased by up to two orders of magnitude (to several months) by encapsulation in dielectric materials such as SiO$_2$ or Si$_x$N$_y$.

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preprint2015arXiv

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark.

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preprint2014arXiv

Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

Two-dimensional (2D) compounds provide unique building blocks for novel layered devices and hybrid photonic structures. However, large surface-to-volume ratio in thin films enhances the significance of surface interactions and charging effects requiring new understanding. Here we use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the influence of the dielectric environment on optical properties of a few monolayer MoS2 films. PL spectra for MoS2 films deposited on SiO2 substrates are found to vary widely. This film-to-film variation is suppressed by additional capping of MoS2 with SiO2 and SiN, improving mechanical coupling of MoS2 with surrounding dielectrics. We show that the observed PL non-uniformities are related to strong variation in the local electron charging of MoS2 films. In completely encapsulated films, negative charging is enhanced leading to uniform optical properties. Observed great sensitivity of optical characteristics of 2D films to surface interactions has important implications for optoelectronics applications of layered materials.

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preprint2014arXiv

Two-dimensional metal-chalcogenide films in tunable optical microcavities

Quasi-two-dimensional (2D) films of layered metal-chalcogenides have attractive optoelectronic properties. However, photonic applications of thin films may be limited owing to weak light absorption and surface effects leading to reduced quantum yield. Integration of 2D films in optical microcavities will permit these limitations to be overcome owing to modified light coupling with the films. Here we present tunable microcavities with embedded monolayer MoS2 or few monolayer GaSe films. We observe significant modification of spectral and temporal properties of photoluminescence (PL): PL is emitted in spectrally narrow and wavelength-tunable cavity modes with quality factors up to 7400; PL life-time shortening by a factor of 10 is achieved, a consequence of Purcell enhancement of the spontaneous emission rate. This work has potential to pave the way to microcavity-enhanced light-emitting devices based on layered 2D materials and their heterostructures, and also opens possibilities for cavity QED in a new material system of van der Waals crystals.

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preprint2011arXiv

Q-Value and Half-Lives for the Double-Beta-Decay Nuclide 110Pd

The 110Pd double-beta decay Q-value was measured with the Penning-trap mass spectrometer ISOLTRAP to be Q = 2017.85(64) keV. This value shifted by 14 keV compared to the literature value and is 17 times more precise, resulting in new phase-space factors for the two-neutrino and neutrinoless decay modes. In addition a new set of the relevant matrix elements has been calculated. The expected half-life of the two-neutrino mode was reevaluated as 1.5(6) E20 yr. With its high natural abundance, the new results reveal 110Pd to be an excellent candidate for double-beta decay studies.

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