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S. S. Das

S. S. Das contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci

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preprint2026arXiv

Enhancement of anomalous Hall effect in Si/Fe multilayers

Anomalous Hall effect studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient are obtained in [Si(50 angstrom)/Fe(tFe)]_20 multilayers when decreasing the Fe layer thickness from 100 Angstrom to 20 Angstrom. The largest anomalous Hall coefficient (Rs) of 1.4 x 10^-7 Ohm m/T was found for t_Fe=20 Angstrom, which is about three orders of magnitude larger than that of pure Fe and Fe/Cr, Al/Fe, Cu/Fe, SiO2/FePt/SiO2 multilayers. The ordinary Hall coefficient R_0 was about two orders of magnitude larger than that of pure Fe. The R_s was found to vary with the longitudinal electronic resistivity, Rho as R_s proportional to (Rho)^2.2, indicating the role of interfaces for the enhancement of the anomalous Hall effect in the multilayers. An increase of Hall sensitivity from 9 mOhm/T to 1.2 Ohm/T is observed on decreasing tFe from 100 Angstrom to 10 Angstrom. The high Hall sensitivity obtained is about three orders of magnitude larger than that of Al/Fe and Cu/Fe multilayers, showing it as an emerging candidate for Hall element for potential applications.

preprint2026arXiv

Giant anomalous Hall effect in ultrathin Si/Fe bilayers

Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were observed upon decreasing the Fe layer thickness t_Fe from 200 to 10 Angstrom. The R_s observed for t_Fe = 10 Angstrom is about three orders of magnitude larger than that of bulk Fe. The scaling law between R_s and longitudinal electrical resistivity (Rho) suggests that the side jump is the dominant mechanism of the anomalous Hall effect. The observed largest Hall sensitivity of 433 Ohm/T surpasses that of the semiconducting GaAs and InAs Hall sensors already reported.

preprint2026arXiv

Percolation-Driven Magnetotransport due to Structural and Microstructural Evolution in Ultrathin Si/Fe Bilayers

The anomalous Hall effect (AHE) in magnetic nanofilms is highly sensitive to the microstructural and magnetic homogeneity. However, the evolution of the microstructure and morphology near the percolation threshold, and its connection to the resulting magnetic and magnetotransport behavior in low-dimensional magnetic heterostructures, remain poorly understood. In this study, we present a comprehensive analysis of the evolution of the structural, microstructural, and magnetotransport properties of Si/Fe bilayers by varying the Fe layer thickness. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and magnetisation data reveal a percolation-driven transition from a continuous metallic film to percolative network structure of grains when tFe decreases below 30 Angstrom. Transport measurements involving longitudinal resistivity (rho), and the anomalous Hall resistivity (rho_A,h,s) show clear divergence near the percolation threshold. The purely electronic conduction channels (rho) evolve more gradually as compared to the combined electronic and magnetic ones rho_A,h,s. The percolative analysis of the structural, magnetic, and magnetotransport data yields a critical exponent in the range of 0.78 to 1.16, consistent with that of 2D-disordered systems. The AHE scaling relation between the rho_A,h,s and rho reveals a crossover of the AHE mechanism from a mixed intrinsic/side-jump contribution with a minor skew scattering component (n ~ 1.42) in the thick, low-resistive samples (tFe > 30 Angstrom) to a skew-scattering-dominant mechanism (n = 0.62) in the high-resistive films (tFe <= 30 Angstrom). This crossover coincides with the onset of structural and magnetic connectivity between the grains. Furthermore, these findings underscore the interlink between microstructure, morphology, magnetism, and Hall transport under a percolation framework.

preprint2022arXiv

Resistivity testing of palladium dilution limits in CoPd alloys for hydrogen storage

Palladium satisfies most of the requirements for an effective hydrogen storage material with two major drawbacks: it has a relatively low gravimetric hydrogen density and is prohibitively expensive for large-scale applications. Pd-based alloys should be considered as possible alternatives to a pure Pd. The question is how much one can dilute the Pd concentration in a variety of candidate materials while preserving hydrogen absorption capability. We demonstrate that the resistivity measurements of thin-film alloy samples can be used for a qualitative high-throughput screening and study of the hydrogen-absorbing properties over the entire range of palladium concentrations. Contrary to palladium-rich alloys where additional hydrogen scattering indicates a degree of hydrogen content, the diluted alloy films respond by a decrease of resistance due to their thickness expansion. Evidence of significant hydrogen absorption was found in thin CoPd films diluted to just 20% of Pd.

preprint2020arXiv

Kinetics of the lattice response to hydrogen absorption in thin Pd and CoPd films

Hydrogen can penetrate reversibly a number of metals, occupy the interstitial sites and cause large expansion of the crystal lattice. The question discussed here is whether the kinetics of the structural response matches hydrogen absorption. We show that thin Pd and CoPd films exposed to a relatively rich hydrogen atmosphere (4% H2) inflate irreversibly, demonstrate the controllable shape memory, and duration of the process can be orders of magnitude longer than hydrogen absorption. The dynamics of the out-of-equilibrium plastic creep is well described by the Avrami - type model of the nucleation and lateral domain wall expansion of the swelled sites.

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