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Researcher profile

M. Senthil Kumar

M. Senthil Kumar contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2026arXiv

Effect of Number of Bilayers on the Anomalous Hall Effect in [Si/Fe]N Multilayers

The influence of varying the number of bilayers (N) on the anomalous Hall effect (AHE) in sputtered Si/Fe multilayers has been investigated. Both the AHE and magnetisation data reveal the in-plane magnetic anisotropy in the samples. Large enhancement of about 24 times in the saturation anomalous Hall resistance (R_Ahs) and anomalous Hall sensitivity (S) has been observed upon decreasing N from 20 to 1. When compared with the bulk Fe, the values of R_Ahs and anomalous Hall coefficient, Rs obtained for N= 1 were enhanced by about 5 and 3 orders of magnitude, respectively. The Rs follows the longitudinal electrical resistivity Rho as Rs proportional to Rho^2.1, suggesting side jump as the dominant mechanism of the AHE. The S as high as 22 Ohm/T over a wide operational field range of -8 to +8 kOe has been obtained for N = 1.

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preprint2026arXiv

Enhancement of anomalous Hall effect in Si/Fe multilayers

Anomalous Hall effect studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient are obtained in [Si(50 angstrom)/Fe(tFe)]_20 multilayers when decreasing the Fe layer thickness from 100 Angstrom to 20 Angstrom. The largest anomalous Hall coefficient (Rs) of 1.4 x 10^-7 Ohm m/T was found for t_Fe=20 Angstrom, which is about three orders of magnitude larger than that of pure Fe and Fe/Cr, Al/Fe, Cu/Fe, SiO2/FePt/SiO2 multilayers. The ordinary Hall coefficient R_0 was about two orders of magnitude larger than that of pure Fe. The R_s was found to vary with the longitudinal electronic resistivity, Rho as R_s proportional to (Rho)^2.2, indicating the role of interfaces for the enhancement of the anomalous Hall effect in the multilayers. An increase of Hall sensitivity from 9 mOhm/T to 1.2 Ohm/T is observed on decreasing tFe from 100 Angstrom to 10 Angstrom. The high Hall sensitivity obtained is about three orders of magnitude larger than that of Al/Fe and Cu/Fe multilayers, showing it as an emerging candidate for Hall element for potential applications.

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preprint2026arXiv

Giant anomalous Hall effect in ultrathin Si/Fe bilayers

Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were observed upon decreasing the Fe layer thickness t_Fe from 200 to 10 Angstrom. The R_s observed for t_Fe = 10 Angstrom is about three orders of magnitude larger than that of bulk Fe. The scaling law between R_s and longitudinal electrical resistivity (Rho) suggests that the side jump is the dominant mechanism of the anomalous Hall effect. The observed largest Hall sensitivity of 433 Ohm/T surpasses that of the semiconducting GaAs and InAs Hall sensors already reported.

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preprint2026arXiv

Magnetization and anomalous Hall effect in SiO2/Fe/SiO2 trilayers

SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with (110) texture and that the two SiO2 layers are amorphous. Magnetic measurements performed with the applied field in in-plane and perpendicular direction to the film plane confirmed that the samples are soft ferromagnetic having strong in-plane magnetic anisotropy. The temperature dependence of magnetization shows complex behavior with the coexistence of both ferromagnetic and superparamagnetic properties. The transport properties of the samples as studied through Hall effect measurements show anomalous Hall effect (AHE). An enhancement of about 14 times in the saturation anomalous Hall resistance (R_Ahs) was observed upon reducing the t_Fe from 300 to 50 Angstrom. The maximum value of R_Ahs = 2.3 Ohm observed for tFe = 50 Angstrom sample is about 4 orders of magnitude larger than that reported for bulk Fe. When compared with the single Fe film, a maximum increase of about 56% in the R_Ahs was observed in sandwiched Fe (50 Angstrom) film. Scaling law suggests that the R_s follows the longitudinal resistivity (Rho) as, R_s proportional to (Rho)^1.9, suggesting side jump as the dominant mechanism of the AHE. A maximum enhancement of about 156% in the sensitivity S was observed.

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preprint2026arXiv

Percolation-Driven Magnetotransport due to Structural and Microstructural Evolution in Ultrathin Si/Fe Bilayers

The anomalous Hall effect (AHE) in magnetic nanofilms is highly sensitive to the microstructural and magnetic homogeneity. However, the evolution of the microstructure and morphology near the percolation threshold, and its connection to the resulting magnetic and magnetotransport behavior in low-dimensional magnetic heterostructures, remain poorly understood. In this study, we present a comprehensive analysis of the evolution of the structural, microstructural, and magnetotransport properties of Si/Fe bilayers by varying the Fe layer thickness. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and magnetisation data reveal a percolation-driven transition from a continuous metallic film to percolative network structure of grains when tFe decreases below 30 Angstrom. Transport measurements involving longitudinal resistivity (rho), and the anomalous Hall resistivity (rho_A,h,s) show clear divergence near the percolation threshold. The purely electronic conduction channels (rho) evolve more gradually as compared to the combined electronic and magnetic ones rho_A,h,s. The percolative analysis of the structural, magnetic, and magnetotransport data yields a critical exponent in the range of 0.78 to 1.16, consistent with that of 2D-disordered systems. The AHE scaling relation between the rho_A,h,s and rho reveals a crossover of the AHE mechanism from a mixed intrinsic/side-jump contribution with a minor skew scattering component (n ~ 1.42) in the thick, low-resistive samples (tFe > 30 Angstrom) to a skew-scattering-dominant mechanism (n = 0.62) in the high-resistive films (tFe <= 30 Angstrom). This crossover coincides with the onset of structural and magnetic connectivity between the grains. Furthermore, these findings underscore the interlink between microstructure, morphology, magnetism, and Hall transport under a percolation framework.

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