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Researcher profile

A. Gerber

A. Gerber contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.othercond-mat.supr-congr-qc

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Published work

10 published item(s)

preprint2022arXiv

Resistivity testing of palladium dilution limits in CoPd alloys for hydrogen storage

Palladium satisfies most of the requirements for an effective hydrogen storage material with two major drawbacks: it has a relatively low gravimetric hydrogen density and is prohibitively expensive for large-scale applications. Pd-based alloys should be considered as possible alternatives to a pure Pd. The question is how much one can dilute the Pd concentration in a variety of candidate materials while preserving hydrogen absorption capability. We demonstrate that the resistivity measurements of thin-film alloy samples can be used for a qualitative high-throughput screening and study of the hydrogen-absorbing properties over the entire range of palladium concentrations. Contrary to palladium-rich alloys where additional hydrogen scattering indicates a degree of hydrogen content, the diluted alloy films respond by a decrease of resistance due to their thickness expansion. Evidence of significant hydrogen absorption was found in thin CoPd films diluted to just 20% of Pd.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Kinetics of the lattice response to hydrogen absorption in thin Pd and CoPd films

Hydrogen can penetrate reversibly a number of metals, occupy the interstitial sites and cause large expansion of the crystal lattice. The question discussed here is whether the kinetics of the structural response matches hydrogen absorption. We show that thin Pd and CoPd films exposed to a relatively rich hydrogen atmosphere (4% H2) inflate irreversibly, demonstrate the controllable shape memory, and duration of the process can be orders of magnitude longer than hydrogen absorption. The dynamics of the out-of-equilibrium plastic creep is well described by the Avrami - type model of the nucleation and lateral domain wall expansion of the swelled sites.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Absence of the Ordinary and Extraordinary Hall effects scaling in granular ferromagnets at metal-insulator transition

Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating and strongly insulating. Scaling between both the ordinary and extraordinary Hall effects and material resistivity is absent in the weakly insulating range characterized by logarithmic temperature dependence of conductivity. The results provide compelling experimental confirmation to recent models of granular metals predicting transition from logarithmic to exponential conductivity temperature dependence when inter-granular conductance drops below the quantum conductance value and loss of Hall effect scaling when inter-granular conductance is higher than the quantum one. The effect was found at high temperatures and reflects the granular structure of material rather than low temperature quantum corrections.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dynamics of Successive Minor Hysteresis Loops

Cumulative growth of successive minor hysteresis loops in Co/Pd multilayers with perpendicular anisotropy was studied in the context of time dependent magnetization reversal dynamics. We show that in disordered ferromagnets, where magnetization reversal involves nucleation, domains' expansion and annihilation, differences between the time dependencies of these processes are responsible for accumulation of nuclei for rapid domain expansion, for the asymmetry of forward and backward magnetization reversals and for the respective cumulative growth of hysteresis loops. Loops stop changing and become macroscopically reproducible when populations of upward and downward nucleation domains balance each other and the respective upward and downward reversal times stabilize.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Inhomogeneity and transverse voltage in superconductors

Voltages parallel and transverse to electric current in slightly inhomogeneous superconductors can contain components proportional to the field and temperature derivatives of the longitudinal and Hall resistivities. We show that these anomalous contributions can be the origin of the zero field and even-in-field transverse voltage occasionally observed at the superconductor to normal state transition. The same mechanism can also cause an anomaly in the odd-in-field transverse voltage interfering the Hall effect signal.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Reversal of the extraordinary Hall effect polarity in thin Co/Pd multilayers

Thin Co/Pd multilayers, with room temperature perpendicular anisotropy and an enhanced surface scattering, were studied for the possible use in the extraordinary Hall effect (EHE) - based magnetic memory devices. Polarity of the EHE signal was found to change from negative in thick samples to positive in thin ones. Reversal of EHE sign was also observed in thick samples with aging. The effect is argued to be related to the dominance of surface scattering having the EHE polarity opposite to that of the bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Asymmetric field dependence of magnetoresistance in magnetic films

We study an asymmetric in field magnetoresistance that is frequently observed in magnetic films and, in particular, the odd longitudinal voltage peaks that appear during magnetization reversal in ferromagnetic films, with out-of-plane magnetic anisotropy. We argue that the anomalous signals result from small variation of magnetization and Hall resistivity along the sample. Experimental data can be well described by a simple circuit model, the latter being supported by analytic and numerical calculations of current and electric field distribution in films with a gradual variation of the magnetization and Hall resistance.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors

We report on the temperature and field driven metal-insulator transition in disordered Ge:Mn magnetic semiconductors accompanied by magnetic ordering, magnetoresistance reaching thousands of percents and suppression of the extraordinary Hall effect by a magnetic field. Magnetoresistance isotherms are shown to obey a universal scaling law with a single scaling parameter depending on temperature and fabrication. We argue that the strong magnetic disorder leads to localization of charge carriers and is the origin of the unusual properties of Ge:Mn alloys.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

The Weyl-Lanczos Equations and the Lanczos Wave Equation in 4 Dimensions as Systems in Involution

Using the work by Bampi and Caviglia, we write the Weyl-Lanczos equations as an exterior differential system. Using Janet-Riquier theory, we compute the Cartan characters for all spacetimes with a diagonal metric and for the plane wave spacetime since all spacetimes have a plane wave limit. We write the Lanczos wave equation as an exterior differential system and, with assistance from Janet-Riquier theory, we find that it forms a system in involution. This result can be derived from the scalar wave equation itself. We compute its Cartan characters and compare them with those of the Weyl-Lanczos equations.

0 citations0 reviewsNo code linkedOpen access