Researcher profile

G. Kopnov

G. Kopnov contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Resistivity testing of palladium dilution limits in CoPd alloys for hydrogen storage

Palladium satisfies most of the requirements for an effective hydrogen storage material with two major drawbacks: it has a relatively low gravimetric hydrogen density and is prohibitively expensive for large-scale applications. Pd-based alloys should be considered as possible alternatives to a pure Pd. The question is how much one can dilute the Pd concentration in a variety of candidate materials while preserving hydrogen absorption capability. We demonstrate that the resistivity measurements of thin-film alloy samples can be used for a qualitative high-throughput screening and study of the hydrogen-absorbing properties over the entire range of palladium concentrations. Contrary to palladium-rich alloys where additional hydrogen scattering indicates a degree of hydrogen content, the diluted alloy films respond by a decrease of resistance due to their thickness expansion. Evidence of significant hydrogen absorption was found in thin CoPd films diluted to just 20% of Pd.

preprint2020arXiv

Kinetics of the lattice response to hydrogen absorption in thin Pd and CoPd films

Hydrogen can penetrate reversibly a number of metals, occupy the interstitial sites and cause large expansion of the crystal lattice. The question discussed here is whether the kinetics of the structural response matches hydrogen absorption. We show that thin Pd and CoPd films exposed to a relatively rich hydrogen atmosphere (4% H2) inflate irreversibly, demonstrate the controllable shape memory, and duration of the process can be orders of magnitude longer than hydrogen absorption. The dynamics of the out-of-equilibrium plastic creep is well described by the Avrami - type model of the nucleation and lateral domain wall expansion of the swelled sites.

preprint2011arXiv

A Superconducting Gap in an Insulator

We present tunneling spectroscopy and transport measurements on disordered indium oxide films that reveal the existence of a superconducting gap in an insulating state. Two films on both sides of the disorder induced superconductor to insulator transition (SIT) show the same energy gap scale at low temperatures. This energy gap persists up to relatively high magnetic fields and is observed across the magnetoresistance peak typical of disordered superconductors. The results provide useful information for understanding the nature of the insulating state in the disorder induced SIT.