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S. P. Chockalingam

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con

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preprint2013arXiv

Visualizing the Charge Density Wave Transition in 2H-NbSe2 in Real Space

We report the direct observation in real space of the charge density wave (CDW) phase transition in pristine 2H-NbSe2 using atomic-resolution scanning tunneling microscopy (STM). We find that static CDW order is established in nanoscale regions in the vicinity of defects at temperatures that are several times the bulk transition temperature Tcdw. On lowering the temperature, the correlation length of these patches increases steadily until CDW order is established in all of space, demonstrating the crucial role played by defects in the physics of the transition region. The nanoscale CDW order has an energy and temperature-independent wavelength. Spectroscopic imaging measurements of the real-space phase of the CDW indicate that an energy gap in NbSe2 occurs at 0.7eV below the Fermi energy in the CDW phase, suggesting that strong electron-lattice interactions and not Fermi surface physics is the dominant cause for CDW formation in NbSe2.

preprint2011arXiv

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

preprint2009arXiv

Multi-vortex versus interstitial vortices scenario in superconducting antidot arrays

In superconducting thin films, engineered lattice of antidots (holes) act as an array of columnar pinning sites for the vortices and thus lead to vortex matching phenomena at commensurate fields guided by the lattice spacing. The strength and nature of vortex pinning is determined by the geometrical characteristics of the antidot lattice (such as the lattice spacing $a_0$, antidot diameter $d$, lattice symmetry, orientation, etc) along with the characteristic length scales of the superconducting thin films, viz., the coherence length ($ξ$) and the penetration depth ($λ$). There are at least two competing scenarios: (i) multiple vortices sit on each of the antidots at a higher matching period, and, (ii) there is nucleation of vortices at the interstitial sites at higher matching periods. Furthermore it is also possible for the nucleated interstitial vortices to reorder under suitable conditions. We present our experimental results on NbN antidot arrays in the light of the above scenarios.