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Abhay N. Pasupathy

Abhay N. Pasupathy appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.opticscond-mat.dis-nncond-mat.otherphysics.data-an

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Published work

18 published item(s)

preprint2022arXiv

Machine Learning for Optical Scanning Probe Nanoscopy

The ability to perform nanometer-scale optical imaging and spectroscopy is key to deciphering the low-energy effects in quantum materials, as well as vibrational fingerprints in planetary and extraterrestrial particles, catalytic substances, and aqueous biological samples. The scattering-type scanning near-field optical microscopy (s-SNOM) technique has recently spread to many research fields and enabled notable discoveries. In this brief perspective, we show that the s-SNOM, together with scanning probe research in general, can benefit in many ways from artificial intelligence (AI) and machine learning (ML) algorithms. We show that, with the help of AI- and ML-enhanced data acquisition and analysis, scanning probe optical nanoscopy is poised to become more efficient, accurate, and intelligent.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Topological electronic structure of YbMg$_2$Bi$_2$ and CaMg$_2$Bi$_2$

Zintl compounds have been extensively studied for their outstanding thermoelectric properties, but their electronic structure remains largely unexplored. Here, we present a detailed investigation of the electronic structure of the isostructural thermopower materials YbMg$_2$Bi$_2$ and CaMg$_2$Bi$_2$ using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). The ARPES results show a significantly smaller Fermi surface and Fermi velocity in CaMg$_2$Bi$_2$ than in YbMg$_2$Bi$_2$. Our ARPES results also reveal that in the case of YbMg$_2$Bi$_2$, Yb-4$f$ states reside well below the Fermi level and likely have a negligible impact on transport properties. To properly model the position of 4$f$-states, as well as the overall electronic structure, a Hubbard $U$ at the Yb sites and spin-orbit coupling (SOC) have to be included in the DFT calculations. Interestingly, the theoretical results reveal that both materials belong to a $Z_2$ topological class and host robust topological surface states around $E_\mathrm {F}$. Due to the intrinsic hole doping, the topological states reside above the Fermi level, inaccessible by ARPES. Our results also suggest that in addition to SOC, vacancies and the resulting hole doping play an important role in the transport properties of these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nanometer-scale lateral p-n junctions in graphene/$α$-RuCl$_3$ heterostructures

The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of graphene on $α$-RuCl$_3$, we conduct a proof-of-concept study demonstrating the existence of intrinsic nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multi-pronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy ($\textit{s}$-SNOM) in order to simultaneously probe both the electronic and optical responses of nanobubble p-n junctions. Our STM and STS results reveal that p-n junctions with a band offset of more than 0.6 eV can be achieved over lateral length scale of less than 3 nm, giving rise to a staggering effective in-plane field in excess of 10$^8$ V/m. Concurrent $\textit{s}$-SNOM measurements confirm the utility of these nano-junctions in plasmonically-active media, and validate the use of a point-scatterer formalism for modeling surface plasmon polaritons (SPPs). Model $\textit{ab initio}$ density functional theory (DFT) calculations corroborate our experimental data and reveal a combination of sub-angstrom and few-angstrom decay processes dictating the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for the use of charge-transfer interfaces such as graphene/$α$-RuCl$_3$ to generate p-n nano-junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Twistons in a Sea of Magic

Magic angle twisted trilayer graphene (TTG) has recently emerged as a new platform to engineer strongly correlated flat bands. Here, we reveal the structural and electronic properties of TTG using low temperature scanning tunneling microscopy at twist angles for which superconductivity has been observed. Real trilayer samples deviate from their idealized structure due to a strong reconstruction of the moiré lattice, which locks layers into near-magic angle, mirror symmetric domains comparable in size to the superconducting coherence length. The price for this magic relaxation is the introduction of an array of localized twist angle faults, termed twistons. These novel, gate-tunable moiré defects offer a natural explanation for the superconducting dome observed in transport and provide an avenue to probe superconducting pairing mechanisms through disorder tuning.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Visualizing Atomically-Layered Magnetism in CrSBr

Two-dimensional (2D) materials can host stable, long-range magnetic phases in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of individual atomic layers and nanoscale inhomogeneity ($\textit{i.e.}$, strain) on the emergence and stability of both intra- and interlayer magnetic phases. Here, we report multifaceted spatial-dependent magnetism in few-layer CrSBr using magnetic force microscopy (MFM) and Monte Carlo-based magnetic simulations. We perform nanoscale visualization of the magnetic sheet susceptibility from raw MFM data and force-distance curves, revealing a characteristic onset of both intra- and interlayer magnetic correlations as a function of temperature and layer-thickness. We demonstrate that the presence of a single uncompensated layer in odd-layer terraces significantly reduces the stability of the low-temperature antiferromagnetic (AFM) phase and gives rise to multiple coexisting magnetic ground states at temperatures close to the bulk Néel temperature ($\textit{T}$$_N$). Furthermore, the AFM phase can be reliably suppressed using modest fields (~300 Oe) from the MFM probe, behaving as a nanoscale magnetic switch. Our prototypical study of few-layer CrSBr demonstrates the critical role of layer parity on field-tunable 2D magnetism and provides vital design criteria for future nanoscale magnetic devices. Moreover, we provide a roadmap for using MFM for nano-magnetometry of 2D materials, despite the ubiquitous absence of bulk zero-field magnetism in magnetized sheets.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enhanced Superconductivity in Monolayer $T_d$-MoTe$_2$ with Tilted Ising Spin Texture

Crystalline two-dimensional (2D) superconductors with low carrier density are an exciting new class of materials in which superconductivity coexists with strong interactions, the effects of complex topology are not obscured by disorder, and electronic properties can be strongly tuned by electrostatic gating. Very recently, two such materials, 'magic-angle' twisted bilayer graphene and monolayer $T_d$-WTe$_2$, have been reported to show superconductivity at temperatures near 1 K. Here we report superconductivity in semimetallic monolayer $T_d$-MoTe$_2$. The critical temperature $T_\textrm{c}$ reaches 8 K, a sixty-fold enhancement as compared to the bulk. This anomalous increase in $T_\textrm{c}$ is only observed in monolayers, and may be indicative of electronically mediated pairing. Reflecting the low carrier density, the critical temperature, magnetic field, and current density are all tunable by an applied gate voltage, revealing a superconducting dome that extends across both hole and electron pockets. The temperature dependence of the in-plane upper critical field is distinct from that of $2H$ transition metal dichalcogenides (TMDs), consistent with a tilted spin texture as predicted by \textit{ab initio} theory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature

In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with local strain, the nanoscale interplay between strain, excitons, defects and local crystalline structure that gives rise to these quantum emitters is poorly understood. Here, we combine room-temperature nano-optical imaging and spectroscopy of excitons in nanobubbles of localized strain in monolayer WSe2 with atomistic structural models to elucidate how strain induces nanoscale confinement potentials that give rise to highly localized exciton states in 2D semiconductors. Nano-optical imaging of nanobubbles in low-defect monolayers reveal localized excitons on length scales of approximately 10 nm at multiple sites along the periphery of individual nanobubbles, which is in stark contrast to predictions of continuum models of strain. These results agree with theoretical confinement potentials that are atomistically derived from measured topographies of existing nanobubbles. Our results provide one-of-a-kind experimental and theoretical insight of how strain-induced confinement - without crystalline defects - can efficiently localize excitons on length scales commensurate with exciton size, providing key nanoscale structure-property information for quantum emitter phenomena in monolayer WSe2.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Moiré metrology of energy landscapes in van der Waals heterostructures

The emerging field of twistronics, which harnesses the twist angle between two-dimensional materials, represents a promising route for the design of quantum materials, as the twist-angle-induced superlattices offer means to control topology and strong correlations. At the small twist limit, and particularly under strain, as atomic relaxation prevails, the emergent moiré superlattice encodes elusive insights into the local interlayer interaction. Here we introduce moiré metrology as a combined experiment-theory framework to probe the stacking energy landscape of bilayer structures at the 0.1 meV/atom scale, outperforming the gold-standard of quantum chemistry. Through studying the shapes of moiré domains with numerous nano-imaging techniques, and correlating with multi-scale modelling, we assess and refine first-principle models for the interlayer interaction. We document the prowess of moiré metrology for three representative twisted systems: bilayer graphene, double bilayer graphene and H-stacked $MoSe_2/WSe_2$. Moiré metrology establishes sought after experimental benchmarks for interlayer interaction, thus enabling accurate modelling of twisted multilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Universal moiré nematic phase in twisted graphitic systems

Graphene moiré superlattices display electronic flat bands. At integer fillings of these flat bands, energy gaps due to strong electron-electron interactions are generally observed. However, the presence of other correlation-driven phases in twisted graphitic systems at non-integer fillings is unclear. Here, we report scanning tunneling microscopy (STM) measurements that reveal the existence of threefold rotational (C3) symmetry breaking in twisted double bilayer graphene (tDBG). Using spectroscopic imaging over large and uniform areas to characterize the direction and degree of C3 symmetry breaking, we find it to be prominent only at energies corresponding to the flat bands and nearly absent in the remote bands. We demonstrate that the C3 symmetry breaking cannot be explained by heterostrain or the displacement field, and is instead a manifestation of an interaction-driven electronic nematic phase, which emerges even away from integer fillings. Comparing our experimental data with a combination of microscopic and phenomenological modeling, we show that the nematic instability is not associated with the local scale of the graphene lattice, but is an emergent phenomenon at the scale of the moiré lattice, pointing to the universal character of this ordered state in flat band moiré materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Tunable strain soliton networks confine electrons in Van der Waals materials

Sliding and twisting van der Waals layers with respect to each other gives rise to moiré structures with emergent electronic properties. Electrons in these moiré structures feel weak potentials that are typically in the tens of millielectronvolt range when the moiré structures are smooth at the atomic scale. Here we report a facile technique to achieve deep, deterministic trapping potentials via strain-based moiré engineering in van der Waals bilayers. We use elasto-scanning tunneling microscopy to show that uniaxial strain drives a commensurate-incommensurate lattice transition in a multilayer MoSe$_2$ system. In the incommensurate state, the top monolayer is partially detached from the bulk through the spontaneous formation of topological solitons where stress is relieved. Intersecting solitons form a honeycomb-like network resulting from the three-fold symmetry of the adhesion potential between layers. The vertices of the honeycomb network occur in bound pairs with different interlayer stacking arrangements. One vertex of the pair is found to be an efficient trap for electrons, displaying two states that are deeply confined within the semiconductor gap and have a spatial extent of 2 nm. Honeycomb soliton networks thus provide a unique path to engineer an array of identical deeply confined states with a strain-dependent tunable spatial separation, without the necessity of introducing chemical defects into the host materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Atomic Lattice Disorder in Charge Density Wave Phases of Exfoliated Dichalcogenides (1T-TaS2)

Charge density waves (CDW) and their concomitant periodic lattice distortions (PLD) govern the electronic properties in many layered transition-metal dichalcogenides. In particular, 1T-TaS2 undergoes a metal-to-insulator phase transition as the PLD becomes commensurate with the crystal lattice. Here we directly image PLDs of the nearly-commensurate (NC) and commensurate (C) phases in thin exfoliated 1T-TaS2 using atomic resolution scanning transmission electron microscopy at room and cryogenic temperature. At low temperatures, we observe commensurate PLD superstructures, suggesting ordering of the CDWs both in- and out-of-plane. In addition, we discover stacking transitions in the atomic lattice that occur via one bond length shifts. Interestingly, the NC PLDs exist inside both the stacking domains and their boundaries. Transitions in stacking order are expected to create fractional shifts in the CDW between layers and may be another route to manipulate electronic phases in layered dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Distinct surface and bulk charge density waves in ultrathin 1T-TaS2

We employ low-frequency Raman spectroscopy to study the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition in 1T-TaS2 ultrathin flakes protected from oxidation. We identify new modes originating from C phase CDW phonons that are distinct from those seen in bulk 1T-TaS2. We attribute these to CDW modes from the surface layers. By monitoring individual modes with temperature, we find that surfaces undergo a separate, low-hysteresis NC-C phase transition that is decoupled from the transition in the bulk layers. This indicates the activation of a secondary phase nucleation process in the limit of weak interlayer interaction, which can be understood from energy considerations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Experimental evidence for a Bragg glass density wave phase in a transition-metal dichalcogenide

Analysis of the spatial dependence of current-voltage characteristics obtained from scanning tunneling microscopy experiments indicates that the charge density wave (CDW) occurring in NbSe$_2$ is subject to locally strong pinning by a non-negligible density of defects, but that on the length scales accessible in this experiment the material is in a "Bragg glass" phase where dislocations and anti-dislocations occur in bound pairs and free dislocations are not observed. A Landau theory-based analysis is presented showing how a strong local modulation may produce only a weak long range effect on the CDW phase.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Molecular beam growth of graphene nanocrystals on dielectric substrates

We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray Absorption Fine Structure spectroscopies reveal a sp2 hybridized hexagonal carbon lattice in the nanocrystals. Lower growth rates favor the formation of higher quality, larger size multi-layer graphene crystallites on all investigated substrates. The surface morphology is determined by the roughness of the underlying substrate and graphitic monolayer steps are observed by ambient scanning tunneling microscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nanoscale Proximity Effect in the High Temperature Superconductor Bi-2212

High temperature cuprate superconductors exhibit extremely local nanoscale phenomena and strong sensitivity to doping. While other experiments have looked at nanoscale interfaces between layers of different dopings, we focus on the interplay between naturally inhomogeneous nanoscale regions. Using scanning tunneling microscopy to carefully track the same region of the sample as a function of temperature, we show that regions with weak superconductivity can persist to elevated temperatures if bordered by regions of strong superconductivity. This suggests that it may be possible to increase the maximum possible transition temperature by controlling the distribution of dopants.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Phonons in Molecular Quantum Dots: Density Functional Calculation of Franck-Condon Emission Rates in External Fields

We report the calculation of various phonon overlaps and their corresponding phonon emission probabilities for the problem of an electron tunneling onto and off of the buckyball-dimer molecular quantum dot $C_{72}$, both with and without the influence of an external field. We show that the stretch mode of the two balls of the dumbbell couples most strongly to the electronic transition, and in turn that a field in the direction of the bond between the two $C_{36}$ balls is most effective at further increasing the phonon emission into the stretch mode. As the field is increased, phonon emission increases in probability with an accompanying decrease in probability of the dot remaining in the ground vibrational state. We also present a simple model to gauge the effect of molecular size on the phonon emission of molecules similar to our $C_{72}$ molecule, including the experimentally tested $C_{140}$. In our approach we do not assume that the hessians of the molecule are identical for different charge states. Our treatment is hence a generalization of the traditional phonon overlap calculations for coupled electron-photon transition in solids.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

From ballistic transport to tunneling in electromigrated ferromagnetic breakjunctions

We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable against magnetostriction and magnetostatic effects. We measure magnetoresistances ~ 0.3% for 100*30 nm^2 constrictions, increasing to a maximum of 80% for atomic-scale widths. These results are consistent with a geometrically-constrained domain wall trapped at the constriction. For the devices in the tunneling regime we observe large fluctuations in MR, between -10 and 85%.

0 citations0 reviewsNo code linkedOpen access