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A. N. Pasupathy

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Published work

10 published item(s)

preprint2019arXiv

Absence of dissipationless transport in clean 2D superconductors

Dissipationless charge transport is one of the defining properties of superconductors (SC). The interplay between dimensionality and disorder in determining the onset of dissipation in SCs remains an open theoretical and experimental problem. In this work, we present measurements of the dissipation phase diagrams of SCs in the two dimensional (2D) limit, layer by layer, down to a monolayer in the presence of temperature (T), magnetic field (B), and current (I) in 2H-NbSe2. Our results show that the phase-diagram strongly depends on the SC thickness even in the 2D limit. At four layers we can define a finite region in the I-B phase diagram where dissipationless transport exists at T=0. At even smaller thicknesses, this region shrinks in area. In a monolayer, we find that the region of dissipationless transport shrinks towards a single point, defined by T=B=I=0. In applied field, we show that time-dependent-Ginzburg-Landau (TDGL) simulations that describe dissipation by vortex motion, qualitatively reproduce our experimental I-B phase diagram. Last, we show that by using non-local transport and TDGL calculations that we can engineer charge flow and create phase boundaries between dissipative and dissipationless transport regions in a single sample, demonstrating control over non-equilibrium states of matter.

preprint2018arXiv

Extreme Sensitivity of the Superconducting State in Thin Films

All non-interacting two-dimensional electronic systems are expected to exhibit an insulating ground state. This conspicuous absence of the metallic phase has been challenged only in the case of low-disorder, low density, semiconducting systems where strong interactions dominate the electronic state. Unexpectedly, over the last two decades, there have been multiple reports on the observation of a state with metallic characteristics on a variety of thin-film superconductors. To date, no theoretical explanation has been able to fully capture the existence of such a state for the large variety of superconductors exhibiting it. Here we show that for two very different thin-film superconductors, amorphous indium-oxide and a single-crystal of 2H-NbSe2, this metallic state can be eliminated by filtering external radiation. Our results show that these superconducting films are extremely sensitive to external perturbations leading to the suppression of superconductivity and the appearance of temperature independent, metallic like, transport at low temperatures. We relate the extreme sensitivity to the theoretical observation that, in two-dimensions, superconductivity is only marginally stable.

preprint2015arXiv

Nature of the Quantum Metal in a Two-Dimensional Crystalline Superconductor

Two-dimensional (2D) materials are not expected to be metals at low temperature due to electron localization. Consistent with this, pioneering studies on thin films reported only superconducting and insulating ground states, with a direct transition between the two as a function of disorder or magnetic field. However, more recent works have revealed the presence of an intermediate metallic state occupying a substantial region of the phase diagram whose nature is intensely debated. Here, we observe such a state in the disorder-free limit of a crystalline 2D superconductor, produced by mechanical co-lamination of NbSe$_2$ in inert atmosphere. Under a small perpendicular magnetic field, we induce a transition from superconductor to the intermediate metallic state. We find a new power law scaling with field in this phase, which is consistent with the Bose metal model where metallic behavior arises from strong phase fluctuations caused by the magnetic field.

preprint2015arXiv

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

The layered transition metal dichalcogenides host a rich collection of charge density wave (CDW) phases in which both the conduction electrons and the atomic structure display translational symmetry breaking. Manipulating these complex states by purely electronic methods has been a long-sought scientific and technological goal. Here, we show how this can be achieved in 1T-TaS2 in the two-dimensional (2D) limit. We first demonstrate that the intrinsic properties of atomically-thin flakes are preserved by encapsulation with hexagonal boron nitride in inert atmosphere. We use this facile assembly method together with TEM and transport measurements to probe the nature of the 2D state and show that its conductance is dominated by discommensurations. The discommensuration structure can be precisely tuned in few-layer samples by an in-plane electric current, allowing continuous electrical control over the discommensuration-melting transition in 2D.

preprint2014arXiv

Quasiparticle Interference, quasiparticle interactions and the origin of the charge density-wave in 2H-NbSe$_{2}$

We show that a small number of intentionally introduced defects can be used as a spectroscopic tool to amplify quasiparticle interference in 2H-NbSe$_{2}$, that we measure by scanning tunneling spectroscopic imaging. We show from the momentum and energy dependence of the quasiparticle interference that Fermi surface nesting is inconsequential to charge density wave formation in 2H-NbSe$_{2}$. We demonstrate that by combining quasiparticle interference data with additional knowledge of the quasiparticle band structure from angle resolved photoemission measurements, one can extract the wavevector and energy dependence of the important electronic scattering processes thereby obtaining direct information both about the fermiology and the interactions. In 2H-NbSe$_{2}$, we use this combination to show that the important near-Fermi-surface electronic physics is dominated by the coupling of the quasiparticles to soft mode phonons at a wave vector different from the CDW ordering wave vector.

preprint2013arXiv

Visualization of Electron Nematicity and Unidirectional Antiferroic Fluctuations at High Temperatures in NaFeAs

The driving forces behind electronic nematicity in the iron pnictides remain hotly debated. We use atomic-resolution variable-temperature scanning tunneling spectroscopy to provide the first direct visual evidence that local electronic nematicity and unidirectional antiferroic (stripe) fluctuations persist to temperatures almost twice the nominal structural ordering temperature in the parent pnictide NaFeAs. Low-temperature spectroscopic imaging of nematically-ordered NaFeAs shows anisotropic electronic features that are not observed for isostructural, non-nematic LiFeAs. The local electronic features are shown to arise from scattering interference around crystalline defects in NaFeAs, and their spatial anisotropy is a direct consequence of the structural and stripe-magnetic order present at low temperature. We show that the anisotropic features persist up to high temperatures in the nominally tetragonal phase of the crystal. The spatial distribution and energy dependence of the anisotropy at high temperatures is explained by the persistence of large amplitude, short-range, unidirectional, antiferroic (stripe) fluctuations, indicating that strong density wave fluctuations exist and couple to near-Fermi surface electrons even far from the structural and density wave phase boundaries.

preprint2013arXiv

Visualizing the Charge Density Wave Transition in 2H-NbSe2 in Real Space

We report the direct observation in real space of the charge density wave (CDW) phase transition in pristine 2H-NbSe2 using atomic-resolution scanning tunneling microscopy (STM). We find that static CDW order is established in nanoscale regions in the vicinity of defects at temperatures that are several times the bulk transition temperature Tcdw. On lowering the temperature, the correlation length of these patches increases steadily until CDW order is established in all of space, demonstrating the crucial role played by defects in the physics of the transition region. The nanoscale CDW order has an energy and temperature-independent wavelength. Spectroscopic imaging measurements of the real-space phase of the CDW indicate that an energy gap in NbSe2 occurs at 0.7eV below the Fermi energy in the CDW phase, suggesting that strong electron-lattice interactions and not Fermi surface physics is the dominant cause for CDW formation in NbSe2.

preprint2010arXiv

Mechanical Control of Spin States in Spin-1 Molecules and the Underscreened Kondo Effect

The ability to make electrical contact to single molecules creates opportunities to examine fundamental processes governing electron flow on the smallest possible length scales. We report experiments in which we controllably stretch individual cobalt complexes having spin S = 1, while simultaneously measuring current flow through the molecule. The molecule's spin states and magnetic anisotropy were manipulated in the absence of a magnetic field by modification of the molecular symmetry. This control enabled quantitative studies of the underscreened Kondo effect, in which conduction electrons only partially compensate the molecular spin. Our findings demonstrate a mechanism of spin control in single-molecule devices and establish that they can serve as model systems for making precision tests of correlated-electron theories.

preprint2010arXiv

The Atomic-scale Growth of Large-Area Monolayer Graphene on Single-Crystal Copper Substrates

We study the growth and microscopic structure of large-area graphene monolayers, grown on copper single crystals by chemical vapor deposition (CVD) in ultra-high vacuum (UHV). Using atomic-resolution scanning tunneling microscopy (STM), we find that graphene grows primarily in registry with the underlying copper lattice for both Cu(111) and Cu(100). The graphene has a hexagonal superstructure on Cu(111) with a significant electronic component, whereas it has a linear superstructure on Cu(100). The film quality is limited by grain boundaries, and the best growth is obtained on the Cu(111) surface.

preprint2004arXiv

Mechanically-adjustable and electrically-gated single-molecule transistors

We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate electrode. With the independent in-situ variations of molecular properties provided by these two experimental "knobs", we are able to achieve a much more detailed characterization of electron transport through the molecule than is possible with either technique separately. We illustrate the devices' performance using C60 molecules.