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Researcher profile

S. Ouardi

S. Ouardi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-el

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Published work

4 published item(s)

preprint2015arXiv

Evidence for Localized Moment Picture in Mn-based Heusler Compounds

X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) were used to probe the oxidation state and element specific magnetic moments of Mn in Heusler compounds with different crystallographic structure. The results were compared with theoretical calculations, and it was found that in full Heusler alloys, Mn is metallic (oxidation state near 0) on both sublattices. The magnetic moment is large and localized when octahedrally coordinated by the main group element, consistent with previous theoretical work, and reduced when the main group coordination is tetrahedral. By contrast, in the half Heusler compounds the magnetic moment of the Mn atoms is large and the oxidation state is +1 or +2. The magnetic and electronic properties of Mn in full and half Heusler compounds are strongly dependent on the structure and sublattice, a fact that can be exploited to design new materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Investigation on Mn$_{3-δ}$Ga/MgO interface for magnetic tunneling junctions

The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-ray photoelectron spectroscopy (HAXPES). The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film strongly suppresses the oxidation of gallium.

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preprint2013arXiv

Direct observation of band bending in topological insulator Bi2Se3

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23--0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.

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