Researcher profile

G. H. Fecher

G. H. Fecher contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2014arXiv

Investigation on Mn$_{3-δ}$Ga/MgO interface for magnetic tunneling junctions

The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-ray photoelectron spectroscopy (HAXPES). The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film strongly suppresses the oxidation of gallium.

preprint2012arXiv

Superconductivity in the Heusler Family of Intermetallics

Several physical properties of the superconducting Heusler compounds, focusing on two systems (Y, Lu, Sc)Pd2Sn and APd2M, where A=Hf, Zr and M=Al, In, are summarized and compared. The analysis of the data shows the importance of the electron-phonon coupling for superconductivity in this family. We report the superconducting parameters of YPd2Sn, which has the highest Tc among all known Heusler superconductors.

preprint2010arXiv

Spin spirals in ordered and disordered solids

A scheme to calculate the electronic structure of systems having a spiral magnetic structure is presented. The approach is based on the KKR (Korringa-Kohn-Rostoker) Green's function formalism which allows in combination with CPA (Coherent Potential Approximation) alloy theory to deal with chemically disordered materials. It is applied to the magnetic random alloys Fe$_x$Ni$_{1-x}$, Fe$_x$Co$_{1-x}$ and Fe$_x$Mn$_{1-x}$. For these systems the stability of their magnetic structure was analyzed. For Fe$_x$Ni$_{1-x}$ the spin stiffness for was determined as a function of concentration that was found in satisfying agreement with experiment. Performing spin spiral calculations the longitudinal momentum-dependent magnetic susceptibility was calculated for pure elemental systems (Cr, Ni) being in non-magnetic state as well as for random alloys (Ag$_x$Pt$_{1-x}$). The obtained susceptibility was used to analyze the stability of the paramagnetic state of these systems.

preprint2010arXiv

Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds

Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter interesting both for fundamental condensed matter physics and material science[1-11]. Many of Heusler compounds with C1b structure are ternary semiconductors which are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the band gap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by lattice parameter) and the magnitude of spin-orbit coupling (by the atomic charge). Based on the first-principle calculations we demonstrate that around fifty Heusler compounds show the band inversion similar to HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantum well structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare earth element Ln which can realize additional properties ranging from superconductivity (e. g. LaPtBi[12]) to magnetism (e. g. GdPtBi[13]) and heavy-fermion behavior (e. g. YbPtBi[14]). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors.

preprint2009arXiv

Electronic Structure, Localization and Spin-State Transition in Cu-substituted FeSe: Fe$_{1-x}$Cu$_x$Se

We report density functional studies of the Fe$_{1-x}$Cu$_x$Se alloy done using supercell and coherent potential approximation methods. Magnetic behavior was investigated using the disordered local moment approach. We find that Cu occurs in a nominal $d^{10}$ configuration and is highly disruptive to the electronic structure of the Fe sheets. This would be consistent with a metal insulator transition due to Anderson localization. We further find a strong cross over from a weak moment itinerant system to a local moment magnet at $x \approx 0.12$. We associate this with the experimentally observed jump near this concentration. Our results are consistent with the characterization of this concentration dependent jump as a transition to a spin-glass.

preprint2008arXiv

Improvement of structural, electronic, and magnetic properties of Co$_2$MnSi thin films by He$^+$-irradiation

The influence of 30 keV He$^+$ ion irradiation on structural, electronic and magnetic properties of Co$_2$MnSi thin films with B2 order was investigated. It was found, that irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization towards the bulk properties of the well-ordered Co$_2$MnSi Heusler compound with L2$_1$ structure.