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E. Ikenaga

E. Ikenaga appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-concond-mat.other

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Published work

11 published item(s)

preprint2014arXiv

Electronic correlations and Hund's coupling effects in SrMoO$_3$ revealed by photoemission spectroscopy

We investigate the electronic structure of a perovskite-type Pauli paramagnet SrMoO3 (t2g2) thin film using hard x-ray photoemission spectroscopy and compare the results to the realistic calculations that combine the density functional theory within the local-density approximation (LDA) with the dynamical-mean field theory (DMFT). Despite the clear signature of electron correlations in the electronic specific heat, the narrowing of the quasiparticle bands is not observed in the photoemission spectrum. This is explained in terms of the characteristic effect of Hund's rule coupling for partially-filled t2g bands, which induces strong quasiparticle renormalization already for values of Hubbard interaction which are smaller than the bandwidth. The interpretation is supported by additional model DMFT calculations including Hund's rule coupling, that show renormalization of low-energy quasiparticles without affecting the overall bandwidth. The photoemission spectra show additional spectral weight around -2 eV that is not present in the LDA+DMFT. We interpret this weight as a plasmon satellite, which is supported by measured Mo, Sr and Oxygen core-hole spectra that all show satellites at this energy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Investigation on Mn$_{3-δ}$Ga/MgO interface for magnetic tunneling junctions

The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these multilayered structured devices. In this context, the interface between Mn$_{1.63}$Ga and MgO is of particular interest because of its spin polarization properties in tunneling junctions. We performed a chemical characterization of the MgO/Mn$_{1.63}$Ga junction by hard x-ray photoelectron spectroscopy (HAXPES). The experiment indicated the formation of Ga-O bonds at the interface and evidenced changes in the local environment of Mn atoms in the proximity of the MgO film. In addition, we show that the insertion of a metallic Mg-layer interfacing the MgO and Mn--Ga film strongly suppresses the oxidation of gallium.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The potential profile at the LaAlO3/SrTiO3 (001) heterointerface in operando conditions

We report measurements of the gate-bias dependent band alignment, especially the confining potential profile, at the conducting LaAlO3/SrTiO3 (001) heterointerface using soft and hard x-ray photoemission spectroscopy. Depth-profiling analysis reveals that a significant potential drop on the SrTiO3 side of the interface occurs within ~2 nm of the interface under negative gate bias voltage. These results demonstrate gate control of the collapse of permittivity at the interface, and explain the dramatic loss of electron mobility with back-gate depletion.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

X-ray spectroscopic study of BaFeO$_{3}$ thin films; an Fe$ ^{4+}$ ferromagnetic insulator

We investigated the electronic and magnetic properties of fully oxidized BaFeO3 thin films, which show ferromagnetic-insulating properties with cubic crystal structure, by hard x-ray photoemission spectroscopy (HAXPES), x-ray absorption spectroscopy (XAS) and soft x-ray magnetic circular dichroism (XMCD). We analyzed the results with configuration-interaction (CI) cluster-model calculations for Fe4+, which showed good agreement with the experimental results. We also studied SrFeO3 thin films, which have an Fe4+ ion helical magnetism in cubic crystal structure, but are metallic at all temperatures. We found that BaFeO3 thin films are insulating with large magnetization (2.1muB/formula unit) under ~ 1 T, using valence-band HAXPES and Fe 2p XMCD, which is consistent with the previously reported resistivity and magnetization measurements. Although Fe 2p core-level HAXPES and Fe 2p XAS spectra of BaFeO3 and SrFeO3 thin films are quite similar, we compared the insulating BaFeO3 to metallic SrFeO3 thin films with valence-band HAXPES. The CI cluster-model analysis indicates that the ground state of BaFeO3 is dominated by d5L (L: ligand hole) configuration due to the negative charge transfer energy, and that the band gap has significant O 2p character. We revealed that the differences of the electronic and magnetic properties between BaFeO3 and SrFeO3 arise from the differences in their lattice constants, through affecting the strength of hybridization and bandwidth.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic structure of hole-doped delafossite oxides CuCr_{1-x}Mg_{x}O_{2}

We report the detailed electronic structure of a hole-doped delafossite oxide CuCr_{1-x}Mg_{x}O_{2} (0 <= x <= 0.03) studied by photoemission spectroscopy (PES), soft x-ray absorption spectroscopy (XAS), and band-structure calculations within the local-density approximation +U (LDA+U) scheme. Cr/Cu 3p-3d resonant PES reveals that the near-Fermi-level leading structure has primarily the Cr 3d character with a minor contribution from the Cu 3d through Cu 3d-O 2p-Cr 3d hybridization, having good agreement with the band-structure calculations. This indicates that a doped hole will have primarily the Cr 3d character. Cr 2p PES and L-edge XAS spectra exhibit typical Cr^{3+} features for all x, while the Cu L-edge XAS spectra exhibited a systematic change with x. This indicates now that the Cu valence is monovalent at x=0 and the doped hole should have Cu 3d character. Nevertheless, we surprisingly observed two types of charge-transfer satellites that should be attributed to Cu^{+} (3d^{10}) and Cu^{2+} (3d^{9}) like initial states in Cu 2p-3d resonant PES spectrum for at x=0, while Cu 2p PES spectra with no doubt shows the Cu^{+} character even for the lightly doped samples. We propose that these contradictory results can be understood by introducing no only the Cu 4s state, but also finite Cu 3d,4s-Cr 3d charge transfer via O 2p states in the ground-state electronic configuration.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Empirical relationship between x-ray photoemission spectra and electrical conductivity in a colossal magnetoresistive manganite La_{1-x}Sr_{x}MnO_{3}

By using laboratory x-ray photoemission spectroscopy (XPS) and hard x-ray photoemission spectroscopy (HX-PES) at a synchrotron facility, we report an empirical semi-quantitative relationship between the valence/core-level x-ray photoemission spectral weight and electrical conductivity in La_{1-x}Sr_{x}MnO_{3} as a function of x. In the Mn 2p_{3/2} HX-PES spectra, we observed the shoulder structure due to the Mn^{3+} well-screened state. However, the intensity at x=0.8 was too small to explain its higher electrical conductivity than x=0.0, which confirms our recent analysis on the Mn 2p_{3/2} XPS spectra. The near-Fermi level XPS spectral weight was found to be a measure of the variation of electrical conductivity with x in spite of a far lower energy resolution compared with the energy scale of the quasiparticle (coherent) peak because of the concurrent change of the coherent and incoherent spectral weight.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spectroscopic studies on the electronic and magnetic states of Co-doped perovskite manganite Pr0.8Ca0.2Mn1-yCoyO3 thin films

We have investigated the electronic and magnetic properties of Co-doped Pr0.8Ca0.2MnO3 thin films using various spectroscopic techniques. X-ray absorption and hard x-ray photoemission spectroscopy revealed that the substituted Co ions are in the divalent state, resulting in hole doping on the Mn atoms. Studies of element-selective magnetic properties by x-ray magnetic circular dichroism found a large orbital magnetic moment for the Co ions. These spectroscopic studies reveal that the substituted Co ions play several roles of hole doping for Mn, ferromagnetic superexchange coupling between the Co2+ and Mn4+ ions, and orbital magnetism of the Co2+ ions. Competition among these complex interactions produces the unique electronic and magnetic behaviors including enhanced coercivity of the Co-doped Pr0.8Ca0.2MnO3.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Large spin-orbit splitting and weakly-anisotropic superconductivity revealed with single-crystalline noncentrosymmetric CaIrSi3

We report normal and superconducting properties of the Rashba-type noncentrosymmetric com- pound CaIrSi3, using single crystalline samples with nearly 100% superconducting volume fraction. The electronic density of states revealed by the hard x-ray photoemission spectroscopy can be well explained by the relativistic first-principle band calculation. This indicates that strong spin-orbit interaction indeed affects the electronic states of this compound. The obtained H - T phase diagram exhibits only approximately 10% anisotropy, indicating that the superconducting properties are almost three dimensional. Nevertheless, strongly anisotropic vortex pinning is observed.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Improvement of structural, electronic, and magnetic properties of Co$_2$MnSi thin films by He$^+$-irradiation

The influence of 30 keV He$^+$ ion irradiation on structural, electronic and magnetic properties of Co$_2$MnSi thin films with B2 order was investigated. It was found, that irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization towards the bulk properties of the well-ordered Co$_2$MnSi Heusler compound with L2$_1$ structure.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Evidence for suppressed metallicity on the surface of La2-xSrxCuO4 and Nd2-xCexCuO4

Hard X-ray Photoemission spectroscopy (PES) of copper core electronic states, with a probing depth of $\sim$60 Å, is used to show that the Zhang-Rice singlet feature is present in La$_2$CuO$_4$ but is absent in Nd$_2$CuO$_4$. Hole- and electron doping in La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) and Nd$_{2-x}$Ce$_x$CuO$_4$ (NCCO) result in new well-screened features which are missing in soft X-ray PES. Impurity Anderson model calculations establish metallic screening as its origin, which is strongly suppressed within 15 $\textÅ$ of the surface. Complemented with X-ray absorption spectroscopy, the small chemical-potential shift in core levels ($\sim0.2$ eV) are shown to be consistent with modifications of valence and conduction band states spanning the band gap ($\sim1$ eV) upon hole- and electron-doping in LSCO and NCCO.

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