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S. N. Jha

S. N. Jha contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

Mapping the magnetic state as a function of anti-site disorder in Sm$ _{2} $NiMnO$ _{6} $ double perovskite thin films

The predictability of any characteristic functional aspect in a double perovskite system has always been compromised by its strong dependence over the inevitably present anti-site disorders (ASD). Here, we aim to precisely map the quantitative and qualitative nature of ASD with the corresponding modifications in observables describing the magnetic and electronic state in epitaxial Sm$ _{2} $NiMnO$ _{6} $ (SNMO) double perovskite thin films. The concentration and distribution patterns of ASD are effectively controlled by optimizing growth conditions and estimated on both local and global scales utilizing extended X-ray absorption fine structure and bulk magnetometry. Depending upon the defect densities, the nature of disorder distribution can vary from homogeneous to partially segregated patches. Primarily, the effect of varying B-site cationic arrangement in SNMO is reflected as the competition of long range ferromagnetic (FM) and short scale antiferromagnetic (AFM) interactions originated from ordered Ni-O-Mn and disordered Ni-O-Ni or Mn-O-Mn bonds, respectively, which leads to systematic shift in magnetic transition temperature and drastic drop in saturation magnetization. In addition, we have observed that the gradual increment in density of ASD leads to significant deviation from uniaxial anisotropy character, reduction in anisotropy energy and enhancement of moment pinning efficiency. However, the observed signatures of $ Ni^{2+}+Mn^{4+} \longrightarrow Ni^{3+}+Mn^{3+} $ charge disproportionation is found to be independent of cation disorder densities. This work serves as a basic route-map to tune the characteristic magnetic anisotropy, magnetic phase transitions, and magnetization reversal mechanism by controlling ASD in a general double perovskite system.

preprint2021arXiv

CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications

We report a combined theoretical and experimental study of a novel quaternary Heusler system CoFeVSb from the view point of room temperature spintronics and thermoelectric applications. It crystallizes in cubic structure with small DO$_3$-type disorder. The presence of disorder is confirmed by room temperature synchrotron X-ray diffraction(XRD) and extended X-ray absorption fine structure (EXAFS) measurements. Magnetization data reveal high ordering temperature with a saturation magnetization of 2.2 $μ_B$/f.u. Resistivity measurements reflect half-metallic nature. Double hysteresis loop along with asymmetry in the magnetoresistance(MR) data reveals room temperature spin-valve feature, which remains stable even at 300 K. Hall measurements show anomalous behavior with significant contribution from intrinsic Berry phase. This compound also large room temperature power factor ($\sim0.62$ mWatt/m/K$^{2}$) and ultra low lattice thermal conductivity ($\sim0.4$ W/m/K), making it a promising candidate for thermoelectric application. Ab-initio calculations suggest weak half-metallic behavior and reduced magnetization (in agreement with experiment) in presence of DO$_3$ disorder. We have also found an energetically competing ferromagnetic FM)/antiferromagnetic (AFM) interface structure within an otherwise FM matrix: one of the prerequisites for spin valve behavior. Coexistence of so many promising features in a single system is rare, and hence CoFeVSb gives a fertile platform to explore numerous applications in future.

preprint2021arXiv

Synthesis and study of ScN thin films

To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room temperature route endows precise control over the $R_{N_2}$ flow for a methodical structural phase evolution from Sc$\to$ScN and probe the correlated physical aspects of the highly textured ScN samples. In the nitrided regime i.e. at $R_{N_2}$ = 2.5-100% flow, incorporation of unintentional oxygen defects were evidenced from surface sensitive soft x-ray absorption spectroscopy study, though less compared to their metal ($R_{N_2} = 0\%$) and interstitial ($R_{N_2} = 1.6\%$) counterparts, due to higher Gibb's free energy for Sc-O-N formation with no trace of ligand field splitting around the O K-edge spectra. To eradicate the sceptism of appearance of N K-edge (401.6 eV) and Sc L-edge (402.2 eV) absorption spectra adjacent to each other, the nascent Sc K-edge study has been adopted for the first time to validate complementary insight on the metrical parameters of the Sc-N system taken into consideration. Optical bandgaps of the polycrystalline ScN thin film samples were found to vary between 2.25-2.62 eV as obtained from the UV-Vis spectroscopy, whereas, the nano-indentation hardness and modulus of the as-deposited samples lie between 15-34GPa and 152-476GPa, respectively following a linearly increasing trend of resistance to plastic deformations. Besides, contrary to other early 3d transition metal nitrides (TiN, VN, CrN), a comprehensive comparison of noticeably large homogeneity range in Sc-N has been outlined to apprehend the minuscule lattice expansion over the large $R_{N_2}$ realm.

preprint2020arXiv

Localization of electronic states resulting from electronic topological transitions in the Mo$_{1-x}$Re$_x$ alloys: A photoemission study

We present the results of resonant photoemission spectroscopy experiments on the Mo$_{1-x}$Re$_{x}$ alloy compositions spanning over two electronic topological transitions (ETT) at the critical concentrations $x_{C1}$ = 0.05 and $x_{C2}$ = 0.11. The photoelectrons show an additional resonance ($R3$) in the constant initial state (CIS) spectra of the alloys along with two resonances ($R1$ and $R2$) which are similar to those observed in molybdenum. All the resonances show Fano-like line shapes. The asymmetry parameter $q$ of the resonances $R1$ and $R3$ of the alloys is observed to be large and negative. Our analysis suggests that the origin of large negative q is associated with phonon assisted inter band scattering between the Mo-like states and the narrow band that appeared due to the ETT.

preprint2019arXiv

Oxygen vacancy mediated cubic phase stabilization at room temperature in pure nano-crystalline Zirconia films: A combined experimental and first-principles based investigation

We report the formation of cubic phase, under ambient conditions, in thin films of Zirconia synthesized by electron beam evaporation technique. The stabilization of the cubic phase was achieved without the use of chemical stabilizers and/or concurrent ion beam bombardment. Films of two different thickness (660 nm, 140 nm) were deposited. The 660 nm and 140 nm films were found to be stoichiometric (ZrO2) and off-stoichiometric (ZrO1.7) respectively by Resonant Rutherford back-scattering spectroscopy. While the 660 nm as-deposited films were in the cubic phase, as indicated by X-ray diffraction and Raman spectroscopy measurements, the 140 nm as-deposited films were amorphous and the transformation to cubic phase was obtained after thermal annealing. Extended X-ray absorption fine structure measurements revealed the existence of Oxygen vacancies in the local structure surrounding Zirconium for all films. However, the amount of these Oxygen vacancies was found to be significantly higher for the amorphous films as compared to the films in the cubic phase (both 660 nm as-deposited and 140 nm annealed films). The cubic phase stabilization is explained on the basis of suppression of the soft X2- mode of vibration of the Oxygen sub-lattice due to the presence of the Oxygen vacancies. Our first-principles modeling under the framework of density functional theory shows that the cubic structure with Oxygen vacancies is indeed more stable at ambient conditions than its pristine (without vacancies) counterpart. The requirement of a critical amount of these vacancies for the stabilization of the cubic phase is also discussed.