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S. K. Ray

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Published work

3 published item(s)

preprint2016arXiv

Polarization-tailored Fano interference in plasmonic crystals: A Mueller matrix model of anisotropic Fano resonance

We present a simple yet elegant Mueller matrix approach for controlling the Fano interference effect and engineering the resulting asymmetric spectral line shape in anisotropic optical system. The approach is founded on a generalized model of anisotropic Fano resonance, which relates the spectral asymmetry to two physically meaningful and experimentally accessible parameters of interference, namely, the Fano phase shift and the relative amplitudes of the interfering modes. The differences in these parameters between orthogonal linear polarizations in an anisotropic system are exploited to desirably tune the Fano spectral asymmetry using pre- and post-selection of optimized polarization states. Experimental control on the Fano phase and the relative amplitude parameters and resulting tuning of spectral asymmetry is demonstrated in waveguided plasmonic crystals using Mueller matrix-based polarization analysis. The approach enabled tailoring of several exotic regimes of Fano resonance including the complete reversal of the spectral asymmetry. The demonstrated control and the ensuing large tunability of Fano resonance in anisotropic systems shows potential for Fano resonance-based applications involving control and manipulation of electromagnetic waves at the nano scale.

preprint2010arXiv

Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

We report a systematic study on 1.2 MeV Ar^8+ irradiated ZnO by x-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 x 10^16 ions/cm^2. Even, the width of the XRD peaks changes little with irradiation. The UV-Vis absorption spectra of the samples, unirradiated and irradiated with lowest fluence (1 x 10^15 ions/cm^2), are nearly same. However, the PL emission is largely quenched for this irradiated sample. Red shift of the absorption edge has been noticed for higher fluence. It has been found that red shift is due to at least two defect centers. The PL emission is recovered for 5 x 10^15 ions/cm^2 fluence. The sample colour is changed to orange and then to dark brown with increasing irradiation fluence. Huge resistivity decrease is observed for the sample irradiated with 5 x 10^15 ions/cm^2 fluence. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation.

preprint2009arXiv

Controlled defects in ZnO by low energy Ar irradiation

We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the initial fluence 1 X 10^15 ions/cm^2 changes the colour of the sample from white to orange while the highest irradiation fluence makes it dark reddish brown that appears as black. Such changes in colour can be correlated with the oxygen vacancy type defects. No significant change in the grain size of the irradiated samples, as revealed from the x-ray diffraction (XRD) line width broadening, has been observed. Increase of surface roughness due to sputtering is clearly visible in scanning electron micrographs (SEM) with highest fluence of irradiation. Room temperature Photoluminescence (PL) spectrum of the unirradiated sample shows intense ultra-violet (UV) emission (~ 3.27 eV) and less prominent defect level emissions (2-3 eV). The overall emission is largely quenched due to initial irradiation fluence. But with increasing fluence UV emission is enhanced along with prominent defect level emissions. Remarkably, the resistivity of the irradiated sample with highest fluence is reduced by four orders of magnitude compared to that of the unirradiated sample. This indicates increase of donor concentration as well as their mobility due to irradiation. Oxygen vacancies are deep donors in ZnO, but surely they influence the stability of the shallow donors (presumably zinc interstitial related) and vice versa. This is in conformity with recent theoretical calculations.