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D. Jana

D. Jana appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.dis-nnphysics.chem-ph

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Published work

6 published item(s)

preprint2023arXiv

Enhancement of photocatalytic performance of V2O5 by rare-earth ions doping, synthesized by facile hydrothermal technique

The rare-earth (RE) elements [Holmium (Ho) and Ytterbium (Yb)] doped vanadium pentoxide (V2O5) with a series of doping concentrations (1 mol.%, 3 mol.%, and 5 mol.%) have been successfully synthesized using environment-friendly facile hydrothermal method. The effect of RE ions on the photocatalytic efficiency of doped V2O5 has also been analyzed. The stable orthorhombic crystal structure of doped V2O5 confirms by the X-ray diffraction with no secondary phase, and high-stressed conditions are generated for the 3 mol.%. The crystallite size, strain, and dislocation density are calculated to perceive the doping effect on the bare V2O5. The optical characteristics have been measured using UV-vis spectroscopy. The absorptions are found to be increased with increasing doping concentrations; however, the bandgap remains in the visible range. The photocatalytic properties are examined for the compounds with varying pH, and it is observed that higher efficiency is exhibited for the pH 7 and catalyst concentration 500 ppm. The highest degradation efficiency is found to be 93% and 95% for the 3 mol.% of Ho and Yb-doped V2O5 samples within 2 hours, respectively. It is elucidated that the RE ions significantly impact the catalytic behavior of V2O5, and the mechanism behind these extraordinary efficiencies has been explained thoroughly.

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preprint2022arXiv

Impact of reaction temperatures on the particle size of V2O5 synthesized by facile hydrothermal technique and their auspicious photocatalytic performance in dye degradation

In this study, a complete study of the effect of hydrothermal reaction temperatures on the synthesis and physical properties of V2O5 using the green facile mild hydrothermal method has been performed with six different temperatures 100 °C to 200 °C, in the step of 20 °C. . The XRD pattern confirm the stable orthorhombic crystal structure of the synthesized samples at all reaction temperatures. The SEM and TEM images demonstrate the particle-like morphology, and these characterizations affirmed that the particles size became larger with the increase of reaction temperatures. The FTIR analysis is employed to study the functional groups, and the obtained results are consistent with the XRD analysis. The bandgap has been estimated at various reaction temperatures using UV-vis diffuse reflectance spectra (UV-DRS) and was found to be varied 2.09 eV to 2.15 eV that are suitable range to absorb a significant amount of visible light. The photocatalysis of methylene blue (MB) with synthesized samples has been accomplished to investigate photocatalytic efficiency. The pure V2O5 synthesized at lower reaction temperature (100 °C) possess a lower bandgap and, accordingly, higher photocatalytic efficiency.

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preprint2016arXiv

Shallow acceptor state in ZnO realized by simple irradiation and annealing route

Activation of shallow acceptor state has been observed in ion irradiated and subsequently air annealed polycrystalline ZnO material. Low temperature photoluminescence (PL) spectrum of the sample exhibits clear signature of acceptor bound exciton (ABX) emission at 3.360 eV. The other two samples, pristine and ion irradiated (without annealing), however, do not show acceptor related PL emission in the nearby energy region. Electron transition from shallow donor (most probable site is interstitial zinc for undoped ZnO) to such newly formed shallow acceptor state creates new donor-acceptor pair (DAP) luminescence peak ~ 3.229 eV. ABX and DAP peak energy positions confirm that the acceptor is N related. The acceptor exciton binding energy has been estimated to be 180 +/- 15 meV which is in conformity with earlier reports. The activation of shallow acceptors without any source of atomic nitrogen can only be possible through diffusion of molecular nitrogen inside the sample during annealing. The N2 molecules get trapped at bulk defect sites incorporated by ion irradiation and subsequent annealing. X-ray diffraction (XRD) and Raman spectroscopic (RS) investigation have been employed to probe the changing defective nature of the ZnO samples. Irradiation induced increased disorder has been detected (both by XRD and RS) which is partially removed/modified by annealing at 300 oC. Simultaneous activation of molecular nitrogen acceptor in purposefully defective ZnO is the key finding of this work. Results presented here provide a simple but controlled way of producing shallow acceptor state in ZnO. If optimized through suitable choice of ion, its energy and fluence as well as the annealing temperature, this methodology can trigger further scope to fabricate devices using ZnO epitaxial thin films or nanowires.

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preprint2010arXiv

Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

We report a systematic study on 1.2 MeV Ar^8+ irradiated ZnO by x-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements. ZnO retains its wurtzite crystal structure up to maximum fluence of 5 x 10^16 ions/cm^2. Even, the width of the XRD peaks changes little with irradiation. The UV-Vis absorption spectra of the samples, unirradiated and irradiated with lowest fluence (1 x 10^15 ions/cm^2), are nearly same. However, the PL emission is largely quenched for this irradiated sample. Red shift of the absorption edge has been noticed for higher fluence. It has been found that red shift is due to at least two defect centers. The PL emission is recovered for 5 x 10^15 ions/cm^2 fluence. The sample colour is changed to orange and then to dark brown with increasing irradiation fluence. Huge resistivity decrease is observed for the sample irradiated with 5 x 10^15 ions/cm^2 fluence. Results altogether indicate the evolution of stable oxygen vacancies and zinc interstitials as dominant defects for high fluence irradiation.

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preprint2009arXiv

Controlled defects in ZnO by low energy Ar irradiation

We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the initial fluence 1 X 10^15 ions/cm^2 changes the colour of the sample from white to orange while the highest irradiation fluence makes it dark reddish brown that appears as black. Such changes in colour can be correlated with the oxygen vacancy type defects. No significant change in the grain size of the irradiated samples, as revealed from the x-ray diffraction (XRD) line width broadening, has been observed. Increase of surface roughness due to sputtering is clearly visible in scanning electron micrographs (SEM) with highest fluence of irradiation. Room temperature Photoluminescence (PL) spectrum of the unirradiated sample shows intense ultra-violet (UV) emission (~ 3.27 eV) and less prominent defect level emissions (2-3 eV). The overall emission is largely quenched due to initial irradiation fluence. But with increasing fluence UV emission is enhanced along with prominent defect level emissions. Remarkably, the resistivity of the irradiated sample with highest fluence is reduced by four orders of magnitude compared to that of the unirradiated sample. This indicates increase of donor concentration as well as their mobility due to irradiation. Oxygen vacancies are deep donors in ZnO, but surely they influence the stability of the shallow donors (presumably zinc interstitial related) and vice versa. This is in conformity with recent theoretical calculations.

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preprint2009arXiv

Synthesis and characterization of single phase Mn doped ZnO

Different samples of Zn1-xMnxO series have been prepared by conventional solid state sintering method. It has been identified, up to what extent of doping enable us to synthesize single-phase polycrystalline Mn doped ZnO samples which is one of the prerequisite for dilute magnetic semiconductor and we have analyzed its certain other physical aspects. In synthesizing the samples proportion of Mn varies from 1 at% to 5 at%. However the milling times have been varied (6, 12, 24, 48 & 96 hours) for only 2 at% Mn doped samples while for other samples (1, 3, 4 & 5 at% Mn doped) the milling time has been kept fixed at 96 hours. Room temperature X-Ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, no segregation of Mn and/or its oxides has been found. The 4 at% Mn doped samples show a weak peak of ZnMn2O4 apart from usual other peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping single-phase behavior is destroyed. Band gap for all the 2 at% Mn doped samples have been estimated as between 3.21 to 3.19 eV and reason for this low band gap values has been explained through the grain boundary trapping model. The room temperature resistivity measurement shows increase of resistivity up to 48 hours of milling and with further milling it saturates. The defect state of these samples has been investigated by using positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (tau 1), at defect site (tau 2) and average (tau av) increases with milling time.

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