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S. J. MacLeod

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cond-mat.mes-hall

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preprint2014arXiv

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust electronic properties after thermal cycling. However these devices require a large top-gate which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here we demonstrate rf reflectometry is possible in an undoped SET.

preprint2009arXiv

The role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas

We re-examine the quantum tau_q and transport tau_t scattering lifetimes due to background impurities in two-dimensional systems. We show that the well-known logarithmic divergence in the quantum lifetime is due to the non-physical assumption of an infinitely thick heterostructure, and demonstrate that the existing non-divergent multiple scattering theory can lead to unphysical quantum scattering lifetimes in high quality heterostructures. We derive a non-divergent scattering lifetime for finite thickness structures, which can be used both with lowest order perturbation theory and the multiple scattering theory. We calculate the quantum and transport lifetimes for electrons in generic GaAs-AlGaAs heterostructures, and find that the correct `rule of thumb' to distinguish the dominant scattering mechanisms in GaAs heterostructures should be tau_t/tau_q < 10 for background impurities and tau_t/tau_q > 10 for remote impurities. Finally we present the first comparison of theoretical results for tau_q and tau_t with experimental data from a GaAs 2DEG in which only background impurity scattering is present. We obtain excellent agreement between the calculations and experimental data, and are able to extract the background impurity density in both the GaAs and AlGaAs regions.