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Researcher profile

A. R. Hamilton

A. R. Hamilton contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.supr-conquant-ph

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Published work

5 published item(s)

preprint2022arXiv

A high-mobility hole bilayer in a germanium double quantum well

We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0$\times$10$^{11}$ cm$^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$0.69 meV, in agreement with Schrödinger-Poisson simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing

Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term allows the spatial separation of spins to be changed in-situ using a voltage applied to an overall top gate. Here we demonstrate that this can be used to control the splitting of the magnetic focussing peaks. Additionally, we compare the focussing peak splitting to that predicted by Shubnikov-de Haas oscillations and k.p bandstructure calculations. We find that the focussing peak splitting is consistently larger than expected, suggesting further work is needed on understanding spin dependent magnetic focussing.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Lightly-strained germanium quantum wells with hole mobility exceeding one million

We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068$m_e$) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes

The Zeeman interaction is a quantum mechanical effect that underpins spin-based quantum devices such as spin qubits. Typically, identification of the Zeeman interaction needs a large out-of-plane magnetic field coupled with ultralow temperatures, which limits the practicality of spin-based devices. However, in two-dimensional (2D) semiconductor holes, the strong spin-orbit interaction causes the Zeeman interaction to couple the spin, the magnetic field, and the momentum, and has terms with different winding numbers. In this work, we demonstrate a physical mechanism by which the Zeeman terms can be detected in classical transport. The effect we predict is very strong, and tunable by means of both the density and the in-plane magnetic field. It is a direct signature of the topological properties of the 2D hole system, and a manifestation in classical transport of an effect stemming from relativistic quantum mechanics. We discuss experimental observation and implications for quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Three-dimensional electron-hole superfluidity in a superlattice close to room temperature

Although there is strong theoretical and experimental evidence for electron-hole superfluidity in separated sheets of electrons and holes at low $T$, extending superfluidity to high $T$ is limited by strong 2D fluctuations and Kosterlitz-Thouless effects. We show this limitation can be overcome using a superlattice of alternating electron- and hole-doped semiconductor monolayers. The superfluid transition in a 3D superlattice is not topological, and for strong electron-hole pair coupling, the transition temperature $T_c$ can be at room temperature. As a quantitative illustration, we show $T_c$ can reach $270$ K for a superfluid in a realistic superlattice of transition metal dichalcogenide monolayers.

0 citations0 reviewsNo code linkedOpen access