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Researcher profile

P. E. Lindelof

P. E. Lindelof contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

8 published item(s)

preprint2014arXiv

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust electronic properties after thermal cycling. However these devices require a large top-gate which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here we demonstrate rf reflectometry is possible in an undoped SET.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Using light and heat to controllably switch and reset disorder configuration in nanoscale devices

Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. The sensitivity of these fluctuations to the underlying disorder potential has only recently been fully realized. We exploit this sensitivity to obtain a novel tool for better understanding the role that background impurities play in the electrical properties of high-mobility AlGaAs/GaAs heterostructures and nanoscale devices. In particular, we report the remarkable ability to first alter the disorder potential in an undoped AlGaAs/GaAs heterostructure by optical illumination and then reset it back to its initial configuration by room temperature thermal cycling in the dark. We attribute this behavior to a mixture of C background impurities acting as shallow acceptors and deep trapping by Si impurities. This "alter and reset" capability, not possible in modulation-doped heterostructures, offers an exciting route to studying how scattering from even small densities of charged impurities influences the properties of nanoscale semiconductor devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependence of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects that arise from coherent tunneling of electrons in the dot.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots

Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and that by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for `ballistic' transport in quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

AlGaAs/GaAs single electron transistors fabricated without modulation doping

We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak lineshape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

The role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas

We re-examine the quantum tau_q and transport tau_t scattering lifetimes due to background impurities in two-dimensional systems. We show that the well-known logarithmic divergence in the quantum lifetime is due to the non-physical assumption of an infinitely thick heterostructure, and demonstrate that the existing non-divergent multiple scattering theory can lead to unphysical quantum scattering lifetimes in high quality heterostructures. We derive a non-divergent scattering lifetime for finite thickness structures, which can be used both with lowest order perturbation theory and the multiple scattering theory. We calculate the quantum and transport lifetimes for electrons in generic GaAs-AlGaAs heterostructures, and find that the correct `rule of thumb&#39; to distinguish the dominant scattering mechanisms in GaAs heterostructures should be tau_t/tau_q < 10 for background impurities and tau_t/tau_q > 10 for remote impurities. Finally we present the first comparison of theoretical results for tau_q and tau_t with experimental data from a GaAs 2DEG in which only background impurity scattering is present. We obtain excellent agreement between the calculations and experimental data, and are able to extract the background impurity density in both the GaAs and AlGaAs regions.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Gate-dependent tunneling-induced level shifts observed in carbon nanotube quantum dots

We have studied electron transport in clean single-walled carbon nanotube quantum dots. Because of the large number of Coulomb blockade diamonds simultaneously showing both shell structure and Kondo effect, we are able to perform a detailed analysis of tunneling renormalization effects. Thus determining the environment induced level shifts of this artificial atom. In shells where only one of the two orbitals is coupled strongly, we observe a marked asymmetric gate-dependence of the inelastic cotunneling lines together with a systematic gate dependence of the size (and shape) of the Coulomb diamonds. These effects are all given a simple explanation in terms of second-order perturbation theory in the tunnel coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Single-electron transport driven by surface acoustic waves: moving quantum dots versus short barriers

We have investigated the response of the acoustoelectric current driven by a surface-acoustic wave through a quantum point contact in the closed-channel regime. Under proper conditions, the current develops plateaus at integer multiples of ef when the frequency f of the surface-acoustic wave or the gate voltage Vg of the point contact is varied. A pronounced 1.1 MHz beat period of the current indicates that the interference of the surface-acoustic wave with reflected waves matters. This is supported by the results obtained after a second independent beam of surface-acoustic wave was added, traveling in opposite direction. We have found that two sub-intervals can be distinguished within the 1.1 MHz modulation period, where two different sets of plateaus dominate the acoustoelectric-current versus gate-voltage characteristics. In some cases, both types of quantized steps appeared simultaneously, though at different current values, as if they were superposed on each other. Their presence could result from two independent quantization mechanisms for the acoustoelectric current. We point out that short potential barriers determining the properties of our nominally long constrictions could lead to an additional quantization mechanism, independent from those described in the standard model of &#39;moving quantum dots&#39;.

0 citations0 reviewsNo code linkedOpen access