Researcher profile

M. Aagesen

M. Aagesen contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2012arXiv

The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots

Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and that by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for `ballistic' transport in quantum dots.

preprint2010arXiv

AlGaAs/GaAs single electron transistors fabricated without modulation doping

We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation doping, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak lineshape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved.

preprint2010arXiv

Ferromagnetic proximity effect in F-QDot-S device

Ferromagnetic proximity effect is studied in InAs nanowire (NW) based quantum dots (QD) strongly coupled to a ferromagnetic (F) and a superconducting (S) lead. The influence of the F lead is detected through the splitting of the spin-1/2 Kondo resonance. We show that the F lead induces a local exchange field on the QD, which has varying amplitude and a sign depending on the charge states. The interplay of the F and S correlations generates an exchange field related supgap feature. This novel mini-gap allows now the visualization of the exchange field also in even charge states

preprint2009arXiv

The role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas

We re-examine the quantum tau_q and transport tau_t scattering lifetimes due to background impurities in two-dimensional systems. We show that the well-known logarithmic divergence in the quantum lifetime is due to the non-physical assumption of an infinitely thick heterostructure, and demonstrate that the existing non-divergent multiple scattering theory can lead to unphysical quantum scattering lifetimes in high quality heterostructures. We derive a non-divergent scattering lifetime for finite thickness structures, which can be used both with lowest order perturbation theory and the multiple scattering theory. We calculate the quantum and transport lifetimes for electrons in generic GaAs-AlGaAs heterostructures, and find that the correct `rule of thumb&#39; to distinguish the dominant scattering mechanisms in GaAs heterostructures should be tau_t/tau_q < 10 for background impurities and tau_t/tau_q > 10 for remote impurities. Finally we present the first comparison of theoretical results for tau_q and tau_t with experimental data from a GaAs 2DEG in which only background impurity scattering is present. We obtain excellent agreement between the calculations and experimental data, and are able to extract the background impurity density in both the GaAs and AlGaAs regions.

preprint2008arXiv

Giant fluctuations and gate control of the g-factor in InAs Nanowire Quantum Dots

We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2-Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.