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S. Ilango

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cond-mat.mtrl-sci

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preprint2016arXiv

A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures

Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) has been investigated using Raman and X-ray photoelectron spectroscopy. While Raman spectra reveal the dominance of vacancy and boundary type defects respectively in vertical and planar NGSs, XPS provides additional information on vacancy related defect peaks at C 1s spectrum that originate from non-conjugated carbon atoms in hexagonal lattice. Although an excellent correlation prevails between these two techniques, our results show that estimation of surface defects by XPS is more accurate than Raman analysis. Nuances of these techniques are discussed in the context of assessing defects in nanographitic structures.

preprint2016arXiv

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition from amorphous at RT, nanocrystalline at 300oC to microcrystalline at 400oC has been observed by Transmission Electron Microscopy (TEM). Average surface roughness (Ra) and morphology has been explored by using Atomic Force Microscopy (AFM). UV-VIS spectrophotometry has been employed to probe the substrate temperature induced changes in optical band-gap (Eg) of grown thin films in reflectance mode. It was found that Eg was increased from 5.08 to 5.21 eV as substrate temperature was increased from RT to 500oC. Urbach energy tail (Eu) along with weak absorption tail (WAT) energy (Et) have been estimated to account for the optical disorder which was found to decrease with associated increase in Eg.

preprint2015arXiv

XPS studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations

We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different substrate temperatures. The temperature of the substrate was varied as room temperature (RT), 100oC and 500oC. The binding energy of Al-2p, N-1s and O-1s core electrons indicate the formation of 2H polytypoid of AlN. The increase in concentration of AlN with substrate temperature during deposition is elucidated through detailed analysis with calculated elemental atomic concentrations (at. %) of all possible phases at the film surface. Our results show that predominate formation of AlN as high as 74 at. % is achievable using substrate temperature as the only process parameter. This high fraction of AlN in thin film surface composition is remarkable when compared to other growth techniques. Also, the formation of other phases is established based on their elemental concentrations.

preprint2014arXiv

Growth Kinetic studies of ion beam sputtered AlN-thin films: Effect of reactive assistance of nitrogen plasma

Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic Scaling Theory (DST). Two distinct exponents, static and dynamic were used to unravel the film growth characteristics. As the deposition time increased, static scaling exponent decreased gradually and substrate surface coverage was increased which is indicated by a decrease in critical length Lc. The rms roughness of the film was increased from 1.99 to 3.42 nm as the deposition time was increased from 3 minutes to 15 minutes. Dynamic scaling exponent was found to be 0.36. During the growth, surface diffusion (n = 4) becomes the major roughening phenomenon while Bulk diffusion (n = 3) turns into the dominating smoothening phenomenon.