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Neha Sharma

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Published work

6 published item(s)

preprint2026arXiv

Rapid inference of gravitational-wave signals in the time domain using a heterodyned likelihood

Parameter estimation of gravitational wave signals is computationally intensive and typically requires millions of likelihood evaluations to construct posterior probability distributions. This computational cost increases significantly in the time domain, which requires non-diagonal covariance matrices to compute the likelihood. Consequently, parameter estimation of long-duration gravitational wave signals, such as binary neutron star mergers, becomes computationally infeasible in time domain. In this work, we detail a framework for the heterodyned likelihood that enables rapid inference in the time domain. Our method is applicable to signals with arbitrary mode content, and leverages the smoothness of the ratio of complex-valued waveform modes, approximating the ratio as a linear function within appropriately chosen time bins. This allows downsampling of the waveform modes and a reformulation of the likelihood, such that it depends only on the bin edges. We demonstrate that this likelihood recovers posteriors that are indistinguishable from those obtained using the standard likelihood in the time domain. We also observe dramatic improvement in speed - for a 128 seconds-long gravitational wave signal, our method is at least $\sim 400$ times faster than the standard time-domain analysis, reducing the wall clock time to just a few hours. We also demonstrate the reliability and unbiasedness of the likelihood using percentile-percentile tests for binary black hole and binary neutron star injections. We use the Gohberg-Semencul representation of the inverse of Toeplitz covariance matrix to accelerate matrix-vector products, which has potential applications even in non heterodyned time-domain inference.

preprint2016arXiv

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition from amorphous at RT, nanocrystalline at 300oC to microcrystalline at 400oC has been observed by Transmission Electron Microscopy (TEM). Average surface roughness (Ra) and morphology has been explored by using Atomic Force Microscopy (AFM). UV-VIS spectrophotometry has been employed to probe the substrate temperature induced changes in optical band-gap (Eg) of grown thin films in reflectance mode. It was found that Eg was increased from 5.08 to 5.21 eV as substrate temperature was increased from RT to 500oC. Urbach energy tail (Eu) along with weak absorption tail (WAT) energy (Et) have been estimated to account for the optical disorder which was found to decrease with associated increase in Eg.

preprint2015arXiv

XPS studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations

We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different substrate temperatures. The temperature of the substrate was varied as room temperature (RT), 100oC and 500oC. The binding energy of Al-2p, N-1s and O-1s core electrons indicate the formation of 2H polytypoid of AlN. The increase in concentration of AlN with substrate temperature during deposition is elucidated through detailed analysis with calculated elemental atomic concentrations (at. %) of all possible phases at the film surface. Our results show that predominate formation of AlN as high as 74 at. % is achievable using substrate temperature as the only process parameter. This high fraction of AlN in thin film surface composition is remarkable when compared to other growth techniques. Also, the formation of other phases is established based on their elemental concentrations.

preprint2014arXiv

Growth Kinetic studies of ion beam sputtered AlN-thin films: Effect of reactive assistance of nitrogen plasma

Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic Scaling Theory (DST). Two distinct exponents, static and dynamic were used to unravel the film growth characteristics. As the deposition time increased, static scaling exponent decreased gradually and substrate surface coverage was increased which is indicated by a decrease in critical length Lc. The rms roughness of the film was increased from 1.99 to 3.42 nm as the deposition time was increased from 3 minutes to 15 minutes. Dynamic scaling exponent was found to be 0.36. During the growth, surface diffusion (n = 4) becomes the major roughening phenomenon while Bulk diffusion (n = 3) turns into the dominating smoothening phenomenon.

preprint2014arXiv

Growth Kinetics of Ion Beam Sputtered Al-thin films by Dynamic Scaling Theory

This paper reports the study of growth kinetics of ion beam sputtered aluminum thin films. Dynamic scaling theory was used to derive the kinetics from AFM measurements. AFM imaging revealed that surface incorporates distinctly different morphologies. Variation in deposition times resulted in such distinctiveness. The growth governing static (alpha) as well as dynamic (beta) scaling exponents have been determined. The exponent (alpha) decreased as the deposition time increased from 3 to 15 minutes. Consequently, the interfacial width (xi) also decreased with critical length (Lc), accompanied with an increase in surface roughness. Surface diffusion becomes a major surface roughening phenomenon that occurs during deposition carried out over a short period of 3 minutes. Extension of deposition time to 15 minutes brought in bulk diffusion process to dominate which eventually led to smoothening of a continuous film.