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A. K. Tyagi

A. K. Tyagi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.geo-phphysics.chem-phcond-mat.supr-con

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Published work

33 published item(s)

preprint2016arXiv

A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures

Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) has been investigated using Raman and X-ray photoelectron spectroscopy. While Raman spectra reveal the dominance of vacancy and boundary type defects respectively in vertical and planar NGSs, XPS provides additional information on vacancy related defect peaks at C 1s spectrum that originate from non-conjugated carbon atoms in hexagonal lattice. Although an excellent correlation prevails between these two techniques, our results show that estimation of surface defects by XPS is more accurate than Raman analysis. Nuances of these techniques are discussed in the context of assessing defects in nanographitic structures.

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preprint2016arXiv

Carrier mediated reduction of stiffness in nanoindented crystalline Si(100)

We report the observation of carrier mediated decrease in the stiffness of crystalline (c)-Si(100) under nanoindentation. The apparent elastic modulii of heavily dopes (1E21 cm-3) p- and n-type c-Si are observed to be lower by 5.-7.5 percent that the estimated value for intrinsic (1E14 cm-3) c-Si. The deviation observed with respect to elastic modulus remarkably matches with the estimated value while considering the electronic elastic strain effect on carrier concentration as an influence of negative pressure coefficient of band gap for Si. The value is predominantly higher than the reported value of a decrease of 1-3 percent in stiffness as an effect of impurity in c-Si.

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preprint2016arXiv

Electrochemical supercapacitor performance of SnO2 quantum dots

Metal oxide nanostructures are widely used in energy applications like super capacitors and Li-on battery. Smaller size nanocrystals show better stability, low ion diffusion time, higher-ion flux and low pulverization than bigger size nanocrystals during electrochemical operation. Studying the distinct properties of smaller size nanocrystals such as quantum dots (QDs) can improve the understanding on reasons behind the better performance and it will also help in using QDs or smaller size nanoparticles (NPs) more efficiently in different applications. Aqua stable pure SnO2 QDs with compositional stability and high surface to volume ratio are studied as an electrochemical super capacitor material and compared with bigger size NPs of size 25 nm. Electron energy-loss spectroscopic study of the QDs revealed dominant role of surface over the bulk. Temperature dependent study of low frequency Raman mode and defect Raman mode of QDs indicated no apparent volume change in the SnO2 QDs within the temperature range of 80-300 K. The specific capacitance of these high surface area and stable SnO2 QDs has showed only 9% loss while increasing the scan rate from 20 mV/S to 500 mV/S. Capacitance loss for the QDs is less than 2% after 1000 cycles of charging discharging, whereas for the 25 nm SnO2 NPs, the capacitance loss is 8% after 1000 cycles. Availability of excess open volume in QDs leading to no change in volume during the electro-chemical operation and good aqua stability is attributed to the better performance of QDs over bigger sized NPs.

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preprint2016arXiv

Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. To reveal the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH4) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2(ON) and VGa-3ON defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied in situ scanning by Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the VGa-3ON defect complex on nanowire surface is attributed in controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires.

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preprint2016arXiv

Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A1 symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however is reported only in the O rich single nanowires with the asymmetric A1(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

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preprint2016arXiv

Nonpolar p-GaN/n-Si heterojunction diode characteristics: A comparison between ensemble and single nanowire devices

The electrical and photodiode characteristics of ensemble and single p-GaN nanowire and n-Si heterojunction devices were studied. Ideality factor of the single nanowire p-GaN/n-Si device was found to be about three times lower compared to that of the ensemble nanowire device. Apart from the deep-level traps in p-GaN nanowires, defect states due to inhomogeneity in Mg dopants in the ensemble nanowire device are attributed to the origin of high ideality factor. Photovoltaic mode of ensemble nanowire device showed an improvement in the fill-factors up to 60 percent over the single nanowire device with fill-factors up to 30 percent. Reponsivity of the single nanowire device in photoconducting mode was found to be enhanced by five orders, at 470 nm. The enhanced photoresponse of the single nanowire device also confirms the photoconduction due to defect states in p-GaN nanowires.

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preprint2016arXiv

Optical band gap and associated band-tails in nanocrystalline AlN thin films grown by reactive IBSD at different substrate temperatures

AlN thin films have been grown on Si (100) substrates by reactive ion beam sputter deposition (IBSD) at different substrate temperatures varying from room temperature (RT) to 500oC. Substrate temperature induced microstructural transition from amorphous at RT, nanocrystalline at 300oC to microcrystalline at 400oC has been observed by Transmission Electron Microscopy (TEM). Average surface roughness (Ra) and morphology has been explored by using Atomic Force Microscopy (AFM). UV-VIS spectrophotometry has been employed to probe the substrate temperature induced changes in optical band-gap (Eg) of grown thin films in reflectance mode. It was found that Eg was increased from 5.08 to 5.21 eV as substrate temperature was increased from RT to 500oC. Urbach energy tail (Eu) along with weak absorption tail (WAT) energy (Et) have been estimated to account for the optical disorder which was found to decrease with associated increase in Eg.

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preprint2015arXiv

Exploring the high-pressure behavior of the three known polymorphs of BiPO4: Discovery of a new polymorph

We have studied the structural behavior of bismuth phosphate under compression. We performed x-ray powder diffraction measurements up to 31.5 GPa and ab initio calculations. Experiments were carried out on different polymorphs; trigonal (phase I) and monoclinic (phases II and III). Phases I and III, at low pressure (0.2-0.8 GPa), transform into phase II, which has a monazite-type structure. At room temperature, this polymorph is stable up to 31.5 GPa. Calculations support these findings and predict the occurrence of an additional transition from the monoclinic monazite-type to a tetragonal scheelite-type structure (phase IV). This transition was experimentally found after the simultaneous application of pressure (28 GPa) and temperature (1500 K), suggesting that at room temperature the transition might by hindered by kinetic barriers. Calculations also predict an additional phase transition at 52 GPa, which exceeds the maximum pressure achieved in the experiments. This transition is from phase IV to an orthorhombic barite-type structure (phase V). We also studied the axial and bulk compressibility of BiPO4. Room-temperature pressure-volume equations of state are reported. BiPO4 was found to be more compressible than isomorphic rare-earth phosphates. The discovered phase IV was determined to be the less compressible polymorph of BiPO4. On the other hand, the theoretically predicted phase V has a bulk modulus comparable with that of monazite-type BiPO4. Finally, the isothermal compressibility tensor for the monazite-type structure is reported at 2.4 GPa showing that the direction of maximum compressibility is in the (010) plane at approximately 15 (21) degrees to the a axis for the case of our experimental (theoretical) study.

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preprint2015arXiv

Growth of InN quantum dots to nanorods: A competition between nucleation and growth rates

Growth evolution of InN nanostructures via a chemical vapor deposition technique is reported using In_2O_3 as precursor material and NH_3 as reactive gas in the temperature range of 550-700 ^oC. Morphology of the nanostructures solely depends on the growth temperature, evolving from quantum dot sized nanoparticles to nanorods. It is found that 630 ^oC is the threshold temperature for nanorod growth. At 630 ^oC, nucleation starts with multifaceted particle having {10-12} surface planes. Subsequently, hexagonal polyhedral NRs are grown along the [0001] direction with non-polar surfaces of m-planes {10-10}. A comprehensive study is carried out to understand the evolution of nanorods as a function of growth parameters like temperature, time and gas flow rate. Change in the morphology of nanostructures is explained based on the nucleation rate and the growth rates during the phase formation. Raman studies of these nanostructures show that a biaxial strain is developed because of unintentional impurity doping with the increase in growth temperature.

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preprint2015arXiv

Influence of in-plane and bridging oxygen vacancies of SnO_2 nanostructures on CH_4 sensing at low operating temperatures

Role of 'O' defects in sensing pollutant with nanostructured SnO_2 is not well understood, especially at low temperatures. SnO_2 nanoparticles were grown by soft chemistry route followed by subsequent annealing treatment under specific conditions. Nanowires were grown by chemical vapor deposition technique. A systematic photoluminescence (PL) investigation of 'O' defects in SnO_2 nanostructures revealed a strong correlation between shallow donors created by the in-plane and the bridging 'O' vacancies and gas sensing at low temperatures. These SnO_2 nanostructures detected methane (CH_4), a reducing and green house gas at a low temperature of 50 ^oC. Response of CH_4 was found to be strongly dependent on surface defect in comparison to surface to volume ratio. Control over 'O' vacancies during the synthesis of SnO2 nanomaterials, as supported by X-ray photoelectron spectroscopy and subsequent elucidation for low temperature sensing are demonstrated.

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preprint2015arXiv

Invoking forbidden modes in SnO_2 nanoparticles using tip enhanced Raman spectroscopy

Raman forbidden modes and surface defect related Raman features in SnO_2 nanostructures carry information about disorder and surface defects which strongly influence important technological applications like catalysis and sensing. Due to the weak intensities of these peaks, it is difficult to identify these features by using conventional Raman spectroscopy. Tip enhanced Raman spectroscopy (TERS) studies conducted on SnO_2 nanoparticles (NPs) of size 4 and 25 nm have offered significant insights of prevalent defects and disorders. Along with one order enhancement in symmetry allowed Raman modes, new peaks related to disorder and surface defects of SnO_2 NPs were found with significant intensity. Temperature dependent Raman studies were also carried out for these NPs and correlated with the TERS spectra. For quasi-quantum dot sized 4 nm NPs, the TERS study was found to be the best technique to probe the finite size related Raman forbidden modes.

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preprint2015arXiv

Novel single phase vanadium dioxide nanostructured films for methane sensing near room temperature

Methane (CH_4) gas sensing properties of novel vanadium dioxide (VO_2) nanostructured films is reported for the first time. The single phase nanostructures are synthesized by pulsed dc-magnetron sputtering of V target followed by oxidation in O_2 atmosphere at 550 ^oC. The partial pressure of O_2 is controlled to obtain stoichiometric VO_2 with the samples showing rutile monoclinic crystalline symmetry and regions of rod shaped nano-architectures. These nanostructured films exhibit a reversible semiconductor to metal transition in the temperature range of 60-70 ^oC. Gas sensing experiments are carried out in the temperature span from 25 ^oC to 200 ^oC in presence of CH_4. These experiments reveal that the films respond very well at temperatures as low as 50 ^oC, in the semiconducting state.

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preprint2015arXiv

Optical Properties of Mono-Dispersed AlGaN Nanowires in the Single-Prong Growth Mechanism

Growth of mono-dispersed AlGaN nanowires of ternary wurtzite phase is reported using chemical vapour deposition technique in the vapour-liquid-solid process. The role of distribution of Au catalyst nanoparticles on the size and the shape of AlGaN nanowires are discussed. These variations in the morphology of the nanowires are understood invoking Ostwald ripening of Au catalyst nanoparticles at high temperature followed by the effect of single and multi-prong growth mechanism. Energy-filtered transmission electron microscopy is used as an evidence for the presence of Al in the as-prepared samples. A significant blue shift of the band gap, in the absence of quantum confinement effect in the nanowires with diameter about 100 nm, is used as a supportive evidence for the AlGaN alloy formation. Polarized resonance Raman spectroscopy with strong electron-phonon coupling along with optical confinement due to the dielectric contrast of nanowire with respect to that of surrounding media are adopted to understand the crystalline orientation of a single nanowire in the sub-diffraction limit of about 100 nm using 325 nm wavelength, for the first time. The results are compared with the structural analysis using high resolution transmission microscopic study.

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preprint2015arXiv

Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor

Growth of GaN nanowires are carried out via metal initiated vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour deposition technique, GaN nanowires are usually grown at high temperatures in the range of 900-1100 ^oC because of low vapor pressure of Ga below 900 ^oC. In the present study, we have grown the GaN nanowires at a temperature, as low as 700 ^oC. Role of indium in the reduction of growth temperature is discussed in the ambit of Raoult's law. Indium is used to increase the vapor pressure of the Ga sufficiently to evaporate even at low temperature initiating the growth of GaN nanowires. In addition to the studies related to structural and vibrational properties, optical properties of the grown nanowires are also reported for detailed structural analysis.

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preprint2015arXiv

XPS studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations

We report on an XPS study of AlN thin films grown on Si(100) substrates by ion beam sputter deposition (IBSD) in reactive assistance of N+/N2+ ions to unravel the compositional variation of their surface when deposited at different substrate temperatures. The temperature of the substrate was varied as room temperature (RT), 100oC and 500oC. The binding energy of Al-2p, N-1s and O-1s core electrons indicate the formation of 2H polytypoid of AlN. The increase in concentration of AlN with substrate temperature during deposition is elucidated through detailed analysis with calculated elemental atomic concentrations (at. %) of all possible phases at the film surface. Our results show that predominate formation of AlN as high as 74 at. % is achievable using substrate temperature as the only process parameter. This high fraction of AlN in thin film surface composition is remarkable when compared to other growth techniques. Also, the formation of other phases is established based on their elemental concentrations.

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preprint2014arXiv

Evolution and defect analysis of vertical graphene nanosheets

We report catalyst-free direct synthesis of vertical graphene nanosheets (VGNs) on SiO2/Si and quartz substrates using microwave electron cyclotron resonance - plasma enhanced chemical vapor deposition. The evolution of VGNs is studied systematically at different growth stages. Raman analysis as a function of growth time reveals that two different disorder-induced competing mechanisms contributing to the defect band intensity. The VGNs grown on SiO2/Si substrates predominantly consists of both vacancy-like and hopping defects. On the other hand, the VGNs grown on quartz substrates contain mainly boundary-like defects. XPS studies also corroborate Raman analysis in terms of defect density and vacancy-like defects for the VGNs grown on SiO2/Si substrates. Moreover, the grown VGNs exhibit a high optical transmittance from 95 to 78 % at 550 nm and the sheet resistance varies from 30 to 2.17 kohms/square depending on growth time.

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preprint2014arXiv

Growth Kinetic studies of ion beam sputtered AlN-thin films: Effect of reactive assistance of nitrogen plasma

Reactive dual ion beam sputter deposition of AlN thin films was carried out for the analysis of surface growth characteristics by Atomic Force Microscopy. The variation of roughness as a function of deposition time was analysed by Dynamic Scaling Theory (DST). Two distinct exponents, static and dynamic were used to unravel the film growth characteristics. As the deposition time increased, static scaling exponent decreased gradually and substrate surface coverage was increased which is indicated by a decrease in critical length Lc. The rms roughness of the film was increased from 1.99 to 3.42 nm as the deposition time was increased from 3 minutes to 15 minutes. Dynamic scaling exponent was found to be 0.36. During the growth, surface diffusion (n = 4) becomes the major roughening phenomenon while Bulk diffusion (n = 3) turns into the dominating smoothening phenomenon.

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preprint2014arXiv

Growth Kinetics of Ion Beam Sputtered Al-thin films by Dynamic Scaling Theory

This paper reports the study of growth kinetics of ion beam sputtered aluminum thin films. Dynamic scaling theory was used to derive the kinetics from AFM measurements. AFM imaging revealed that surface incorporates distinctly different morphologies. Variation in deposition times resulted in such distinctiveness. The growth governing static (alpha) as well as dynamic (beta) scaling exponents have been determined. The exponent (alpha) decreased as the deposition time increased from 3 to 15 minutes. Consequently, the interfacial width (xi) also decreased with critical length (Lc), accompanied with an increase in surface roughness. Surface diffusion becomes a major surface roughening phenomenon that occurs during deposition carried out over a short period of 3 minutes. Extension of deposition time to 15 minutes brought in bulk diffusion process to dominate which eventually led to smoothening of a continuous film.

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preprint2014arXiv

Inelastic Neutron Scattering Studies of Phonon Spectra and Simulations in Tungstates, AWO4 (A = Ba, Sr, Ca and Pb)

Lattice dynamics and high pressure phase transitions in AWO4 (A = Ba, Sr, Ca and Pb) have been investigated using inelastic neutron scattering experiments, ab-initio density functional theory calculations and extensive molecular dynamics simulations. The vibrational modes that are internal to WO4 tetrahedra occur at the highest energies consistent with the relative stability of WO4 tetrahedra. The neutron data and the ab-initio calculations are found to be in excellent agreement. The neutron and structural data are used to develop and validate an interatomic potential model. The model is used for classical molecular dynamics simulations to study their response to high pressure. We have calculated the enthalpies of the scheelite and fergusonite phases as a function of pressure, which confirms that the scheelite to fergusonite transition is second order in nature. With increase in pressure, there is a gradual change in the AO8 polyhedra, while there is no apparent change in the WO4 tetrahedra. We found that that all the four tungstates amorphize at high pressure. This is in good agreement with available experimental observations which show amorphization at around 45 GPa in BaWO4 and 40 GPa in CaWO4. On amorphization, there is an abrupt increase in the coordination of the W atom while the bisdisphenoids around A atom are considerably distorted. The pair correlation functions of the various atom pairs corroborate these observations. Our observations aid in predicting the pressure of amorphization in SrWO4 and PbWO4, which have not been experimentally reported.

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preprint2014arXiv

Mass spectral analysis and quantification of Secondary Ion Mass Spectrometry data

This work highlights the possibility of improving the quantification aspect of Cs-complex ions in SIMS (Secondary Ion Mass Spectrometry), by combining the intensities of all possible Cs-complexes. Identification of all possible Cs-complexes requires quantitative analysis of mass spectrum from the material of interest. The important steps of this mass spectral analysis include constructing fingerprint mass spectra of the constituent species from the table of isotopic abundances of elements, constructing the system(s) of linear equations to get the intensities of those species, solving them, evaluating the solutions and employing a regularization process when required. These steps are comprehensively described and the results of their application on a SIMS mass spectrum obtained from D9 steel are presented. It is demonstrated that results from the summation procedure, which covers entire range of sputtered clusters, is superior to results from single Cs-complex per element. The result of employing a regularization process in solving a mass spectrum from an SS316LN steel specimen is provided to demonstrate the necessity of regularization.

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preprint2013arXiv

Phonons and Thermodynamics of LiMPO4 (M=Mn, Fe)

Lithium transition metal phospho-olivines are useful electrode materials, owing to their stability, high safety, low cost and cyclability. We report phonon studies using neutron inelastic scattering experiments, ab-initio density functional theory calculations and potential model calculations on LiMPO4 (M=Mn, Fe) at ambient and high temperature to understand the microscopic picture of Li sub-lattice. The experiments are in good agreement with calculations. The lattice dynamics calculations indicate instability of a zone-centre as well as zone-boundary modes along (100) at volume corresponding to high temperature. The unstable phonon modes show mainly large vibration of Li atoms in the x-z plane of the orthorhombic structure (space group Pbnm). Molecular dynamics simulations with increasing temperature indicate large mean square displacement of Li as compared to other constituent atoms. The computed pair-correlations between various atom pairs show that there is local disorder occurring in the lithium sub-lattice with increasing temperature, while other pairs show minimal changes. The results find the two compounds to be thermally stable up to high temperatures, which is a desirable trait for its battery applications.

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preprint2013arXiv

Temperature dependence of dielectric constants in Titanium Nitride

The temperature dependence of optical constants of titanium nitride thin film is investigated using spectroscopic ellipsometry between 1.4 to 5 eV in the temperature range 300 K to 650 K in steps of 50 K. The real and imaginary parts of the dielectric functions "1(E) and "2(E) increase marginally with increase in temperature. A Drude Lorentz dielectric analysis based on free electron and oscillator model are carried out to describe the temperature behavior. The parameters of the Lorentz oscillator model also showed that the relaxation time decreased with temperature while the oscillator energies increased. This study shows that owing to marginal change in the refractive index with temperature, titanium nitride can be employed for surface plasmon sensor applications even in environments where rise in temperature is imminent.

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preprint2012arXiv

High-Temperature Phonon Spectra of Multiferroic BiFeO3 from Inelastic Neutron Spectroscopy

We report inelastic neutron scattering measurements of the phonon spectra in a pure powder sample of the multiferroic material BiFeO3. A high-temperature range was covered to unravel the changes in the phonon dynamics across the Neel (T_N ~ 650 K) and Curie (T_C ~ 1100 K) temperatures. Experimental results are accompanied by ab-initio lattice dynamical simulations of phonon density of states to enable microscopic interpretations of the observed data. The calculations reproduce well the observed vibrational features and provide the partial atomic vibrational components. Our results reveal clearly the signature of three different phase transitions both in the diffraction patterns and phonon spectra. The phonon modes are found to be most affected by the transition at the T_C. The spectroscopic evidence for the existence of a different structural modification just below the decomposition limit (T_D ~ 1240 K) is unambiguous indicating strong structural changes that may be related to oxygen vacancies and concomitant Fe3+ to Fe2+ reduction and spin transition.

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preprint2012arXiv

In situ high-pressure synchrotron x-ray diffraction study of CeVO4 and TbVO4 up to 50 GPa

Room temperature angle-dispersive x-ray diffraction measurements on zircon-type TbVO4 and CeVO4 were performed in a diamond-anvil cell up to 50 GPa using neon as pressure-transmitting medium. In TbVO4 we found at 6.4 GPa evidence of a non-reversible pressure-induced structural phase transition from zircon to a scheelite-type structure. A second transition to an M-fergusonite-type structure was found at 33.9 GPa, which is reversible. Zircon-type CeVO4 exhibits two pressure-induced transitions. First an irreversible transition to a monazite-type structure at 5.6 GPa and second at 14.7 GPa a reversible transition to an orthorhombic structure. No additional phase transitions or evidences of chemical decomposition are found in the experiments. The equations of state and axial compressibility for the different phases are also determined. Finally, the sequence of structural transitions and the compressibilities are discussed in comparison with other orhtovanadates and the influence of non-hydrostaticity commented.

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preprint2012arXiv

New high-pressure phase and equation of state of Ce2Zr2O8

In this paper we report a new high-pressure rhombohedral phase of Ce2Zr2O8 observed from high-pressure angle-dispersive x-ray diffraction and Raman spectroscopy studies up to nearly 12 GPa. The ambient-pressure cubic phase of Ce2Zr2O8 transforms to a rhombohedral structure beyond 5 GPa with a feeble distortion in the lattice. Pressure evolution of unit-cell volume showed a change in compressibility above 5 GPa. The unit-cell parameters of the high-pressure rhombohedral phase at 12.1 GPa are ah = 14.6791(3) Å, ch = 17.9421(5) Å, V = 3348.1(1) Å3. The structure relation between the parent cubic (P2_13) and rhombohedral (P3_2) phases were obtained by group-subgroup relations. All the Raman modes of the cubic phase showed linear evolution with pressure with the hardest one at 197 cm-1. Some Raman modes of the high-pressure phase have a non-linear evolution with pressure and softening of one low-frequency mode with pressure is found. The compressibility, equation of state, and pressure coefficients of Raman modes of Ce2Zr2O8 are also reported.

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preprint2012arXiv

Optical properties and hardness of highly a-axis oriented AlN films

This paper reports optical and nanomechanical properties of seldom studied highly a-axis oriented AlN thin films for the first time. These films were deposited by reactive DC magnetron sputtering technique at an optimal target to substrate distance of 180 mm. Bragg-Brentano geometry X-ray and rocking curve (FWHM = 52 arcsec) studies confirmed the preferred orientation. Spectroscopic ellipsometry revealed that these films exhibit a refractive index of 1.93 at a wavelength of 546 nm. The hardness and elastic modulus of these films were 17 GPa and 190 GPa, respectively. The mechanical properties obtained here are much higher than the earlier reported and therefore can be useful as protective coating in thermo printing devices, piezoelectric films in bulk acoustic wave resonators.

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preprint2012arXiv

Phonons and Colossal Thermal Expansion Behavior of Ag3Co(CN)6 and Ag3Fe(CN)6

Recently colossal positive volume thermal expansion has been found in the framework compounds Ag3Co(CN)6 and Ag3Fe(CN)6. Phonon spectra have been measured using the inelastic neutron scattering technique as a function of temperature and pressure. The data has been analyzed using ab-initio calculations. We find that the bonding is very similar in both compounds. At ambient pressure modes in the intermediate frequency part of the vibrational spectra in the Co compound are shifted to slightly higher energies as compared to the Fe compound. The temperature dependence of the phonon spectra gives evidence for large explicit anharmonic contribution to the total anharmonicity for low-energy modes below 5 meV. We found that modes are mainly affected by the change in the size of unit cell, which in turn changes the bond lengths and vibrational frequencies. Thermal expansion has been calculated via the volume dependence of phonon spectra. Our analysis indicates that Ag phonon modes in the energy range from 2 to 5 meV are strongly anharmonic and major contributors to thermal expansion in both compounds. The application of pressure hardens the low-energy part of the phonon spectra involving Ag vibrations and confirms the highly anharmonic nature of these modes.

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preprint2011arXiv

Exchange Bias in BiFe_{0.8}Mn_{0.2}O_3 Nanoparticles with an Antiferromagnetic Core and a Diluted Antiferromagnetic Shell

We have observed conventional signature of exchange bias (EB), in form of shift in field-cooled (FC) hysteresis loop, and training effect, in BiFe0.8Mn0.2O3 nanoparticles. From neutron diffraction, thermoremanent magnetization and isothermoremanent magnetization measurements, the nanoparticles are found to be core-shell in nature, consisting of an antiferromagnetic (AFM) core, and a 2-dimensional diluted AFM (DAFF) shell with a net magnetization under a field. The analysis of the training effect data using the Binek's model shows that the observed loop shift arises entirely due to an interface exchange coupling between core and shell, and the intrinsic contribution of the DAFF shell to the total loop shift is zero. A significantly high value of EB field has been observed at room temperature. The present study is useful to understand the origin of EB in other DAFF-based systems as well.

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preprint2010arXiv

Experimental and theoretical investigations on ThGeO4 at high pressure

We report here the combined results of angle-dispersive x-ray diffraction experiments performed on ThGeO4 up to 40 GPa and total-energy density-functional theory calculations. Zircon-type ThGeO4 is found to undergo a pressure-driven phase transition at 11 GPa to the tetragonal scheelite structure. A second phase transition to a monoclinic M-fergusonite type is found beyond 26 GPa. The same transition has been observed in samples that crystallize in the scheelite phase at ambient pressure. No additional phase transition or evidence of decomposition of ThGeO4 has been detected up to 40 GPa. The unit-cell parameters of the monoclinic high-pressure phase are a = 4.98(2) A, b = 11.08(4) A, c = 4.87(2) A, and beta = 90.1(1), Z = 4 at 28.8 GPa. The scheelite-fergusonite transition is reversible and the zircon-scheelite transition non-reversible. From the experiments and the calculations, the room temperature equation of state for the different phases is also obtained. The anisotropic compressibility of the studied crystal is discussed in terms of the differential compressibility of the Th-O and Ge-O bonds.

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preprint2010arXiv

High-pressure x-ray diffraction study of bulk and nanocrystalline PbMoO4

We studied the effects of high-pressure on the crystalline structure of bulk and nanocrystalline scheelite-type PbMoO4. We found that in both cases the compressibility of the materials is highly non-isotropic, being the c-axis the most compressible one. We also observed that the volume compressibility of nanocrystals becomes higher that the bulk one at 5 GPa. In addition, at 10.7(8) GPa we observed the onset of an structural phase transition in bulk PbMoO4. The high-pressure phase has a monoclinic structure similar to M-fergusonite. The transition is reversible and not volume change is detected between the low- and high-pressure phases. No additional structural changes or evidence of decomposition are found up to 21.1 GPa. In contrast nanocrystalline PbMoO4 remains in the scheelite structure at least up to 16.1 GPa. Finally, the equation of state for bulk and nanocrystalline PbMoO4 are also determined.

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preprint2009arXiv

High-pressure structural investigation of several zircon-type orthovanadates

Room temperature angle-dispersive x-ray diffraction measurements on zircon-type EuVO4, LuVO4, and ScVO4 were performed up to 27 GPa. In the three compounds we found evidence of a pressure-induced structural phase transformation from zircon to a scheelite-type structure. The onset of the transition is near 8 GPa, but the transition is sluggish and the low- and high-pressure phases coexist in a pressure range of about 10 GPa. In EuVO4 and LuVO4 a second transition to a M-fergusonite-type phase was found near 21 GPa. The equations of state for the zircon and scheelite phases are also determined. Among the three studied compounds, we found that ScVO4 is less compressible than EuVO4 and LuVO4, being the most incompressible orthovanadate studied to date. The sequence of structural transitions and compressibilities are discussed in comparison with other zircon-type oxides.

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preprint2009arXiv

Superconducting Fe(1+delta)Se(1-x)Te(x) thin films: Growth, characterization and properties

Thin films of Fe(1+delta)Se(1-x)Te(x) (delta ~ 0.18 & x ~ 0.5) have been successfully grown on (100) oriented single crystalline SrTiO3 and LaAlO3 substrates by pulsed laser deposition. The crystal structure was characterized by x-ray diffraction, and the superconducting properties by electrical resistivity measurements. X-ray diffraction analysis establishes the epitaxial growth of the films with c-axis orientation. Atomic force microscopy showed a smooth surface morphology for the films grown on SrTiO3 substrates. All the films are observed to be superconducting with a Tc of ~ 8-14 K depending on the deposition conditions. The deposition parameters were optimized to obtain good quality films with Tc comparable to that of the target material.

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preprint2008arXiv

Fe and N self-diffusion in amorphous FeN: A SIMS and neutron reflectivity study

Simultaneous measurement of self-diffusion of iron and nitrogen in amorphous iron nitride (Fe86N14) using secondary ion mass spectroscopy (SIMS) technique has been done. In addition neutron reflectivity (NR) technique was employed to study the Fe diffusion in the same compound. The broadening of a tracer layer of 57Fe8615N14 sandwiched between Fe86N14 layers was observed after isothermal vacuum annealing of the films at different temperatures in SIMS measurements. And a decay of the Bragg peak intensity after isothermal annealing was observed in [Fe86N14/57Fe86N14]10 multilayers in NR. Strong structural relaxation of diffusion coefficient was observed below the crystallization temperature of the amorphous phase in both measurements. It was observed from the SIMS measurements that Fe diffusion was about 2 orders of magnitude smaller compared to nitrogen at a given temperature. The NR measurements reveal that the mechanism of Fe self-diffusion is very similar to that in metal-metal type metallic glasses. The structural relaxation time for Fe and N diffusion was found comparable indicating that the obtained relaxation time essentially pertain to the structural relaxation of the amorphous phase.

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