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Researcher profile

K. Ganesan

K. Ganesan contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hall

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Published work

7 published item(s)

preprint2022arXiv

Raman and photoluminescence spectroscopic studies on structural disorder in oxygen deficient Gd2Ti2O7-d single crystals

We report on Raman and photoluminescence spectroscopic studies on oxygen vacancy induced structural disorder in Gd2Ti2O7-d single crystals grown by optical floating zone technique under argon atmosphere. The oxygen vacancies in Gd2Ti2O7-d wafers decrease with thermal annealing in an air atmosphere. The full width at half maximum of X-ray diffraction rocking curve decreases from 245 to 157 arc-second and the optical transmittance increases from 23 to 87 % (at 1000 nm) upon post growth thermal annealing. Raman spectroscopic studies reveal a monotonic increase in intensity of O-Gd-O (Eg) and Ti-O (A1g) stretching modes with thermal annealing. Since these modes are associated with modulation of oxygen x parameter which is sensitive to Ti-O octahedron distortion, the increase in Raman intensity indicates an improvement in structural ordering of oxygen sub-lattice in Gd2Ti2O7-d. Moreover, the photoluminescence studies also corroborate the Raman analysis in terms of reduction of structural defects associated with oxygen vacancies as a function of thermal annealing. This study demonstrates the effectiveness of using Raman spectroscopy to probe the structural disorder in Gd2Ti2O7-d crystals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Studies on tuning surface electronic properties of hydrogenated diamond by oxygen functionalization

Ultra-wide bandgap and the absence of shallow dopants are the major challenges in realizing diamond based electronics. However, the surface functionalization offers an excellent alternative to tune electronic structure of diamonds. Herein, we report on tuning the surface electronic properties of hydrogenated polycrystalline diamond films through oxygen functionalization. The hydrogenated diamond (HD) surface transforms from hydrophobic to hydrophilic nature and the sheet resistance increases from ~ 8 kohms/sq. to over 10 Gohms/sq. with progressive ozonation. The conductive atomic force microscopic (c-AFM) studies reveal preferential higher current conduction on selective grain interiors (GIs) than that of grain boundaries confirming the surface charge transfer doping on these HDs. In addition, the local current conduction is also found to be much higher on (111) planes as compared to (100) planes on pristine and marginally O-terminated HD. However, there is no current flow on the fully O-terminated diamond (OD) surface. Further, X-ray photoelectron spectroscopic (XPS) studies reveal a redshift in binding energy (BE) of C1s on pristine and marginally O-terminated HD surfaces indicating surface band bending whilst the BE shifts to higher energy for OD. Moreover, XPS analysis also corroborate c-AFM study for the possible charge transfer doping mechanism on the diamond films which results in high current conduction on GIs of pristine and partially O-terminated HDs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of 3D weak localization (3DWL) and thermally activated hopping at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence time as function of temperature, which shows evidence of a power law dependence in good agreement with theory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural and optical properties of beta irradiated YAlO3 single crystals

We report on the growth, structural and optical properties of YAlO3 single crystals grown by optical floating zone technique. Powder X-ray diffraction and Raman spectroscopic studies confirm the phase purity of the crystals. Raman analysis reveals that the intensity and line-width of Raman bands increase significantly with beta irradiation indicating the formation of structural defects in YAlO3 lattice. The optical properties are studied through UV-visible absorption, and photoluminescence emission and excitation spectroscopies under pre- and post- beta irradiation. The optical studies indicate the presence of Sm and Cr impurities by exhibiting characteristic emission lines in the orange red region. Further, a systematic study on the thermoluminescence (TL) characteristics of the crystal is also carried out at different doses of beta irradiation. The crystals exhibit a prominent TL glow peak at 239 C for less than 5 Gy doses while a weak second glow peak evolves at higher doses. Also, the crystals show a nearly linear dose response in the studied range from 0.1 to 10 Gy. The glow curve analysis reveals that the TL emission obeys the first order kinetics model. Based on the optical studies, the plausible mechanism for the TL glow curve is discussed in terms of the intrinsic defects and impurities that are present in the crystal.

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preprint2020arXiv

Structural, optical and mechanical properties of Y2Ti2O7 single crystal

We report on the growth of Y2Ti2O7 single crystals by optical floating zone technique. X-ray diffraction and Raman spectroscopy studies confirm the structural quality of the crystal. The UV-Vis optical studies reveal that the grown crystals have a high optical transparency with an optical band gap of 3.44 eV. The hardness of Y2Ti2O7 single crystal is measured for the first time using nanoindentation. The measured hardness, indentation and bulk modulus are found to be 16.4$\pm$0.4, 321.1$\pm$6.9 and 243.3$\pm$5.2 GPa respectively, which are higher than its polycrystalline counterpart and its constituent metal oxides, Y2O3 and TiO2.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural, Raman and photoluminescence studies on nanocrystalline diamond films: Effects of ammonia in feedstock

Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film. Pure and N doped nanocrystalline diamond films are synthesized on Si by hot filament chemical vapour deposition using NH3:CH4:H2 at different nominal N/C ratios viz. 0, 0.13, 0.35, 0.50 and 0.75 in feedstock. X ray diffraction analysis reveal a systematic initial increase and then a decrease in crystallite size with N/C ratio in feedstock. Further, a monotonic increase in Raman line width and peak position of diamond band indicates that the compressive strain in diamond lattice increases as a function of N/C ratio upto 0.50. However, at higher N/C ratio of 0.75, the compressive strain gets relaxed a little and produces a lower strain. Furthermore, a unique Raman mode at 1195 cm-1 is observed corresponding to the C=N-H vibrations indicating a significant N concentration in the NCD films. In addition, visible and UV PL studies reveal the presence of several N related color centres with multiple emission lines in the range of 380 to 700 nm. An optimally N doped diamond film grown at N/C ratio of 0.35 in feedstock shows a significant enhancement in room temperature PL emission at about 505 and 700 nm. This PL enhancement is attributed to H3 and other aggregates of N related defect centres, under 355 and 532 nm laser excitations respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A route towards controlling the morphology of vertical graphene nanosheets

Herein, an effort has given to sheds light on the effects of plasma process parameters on the growth of vertical graphene nanosheets (VGNs) by plasma enhanced chemical vapor deposition (PECVD. The parameters include substrate temperature, microwave power and distance between plasma sources to substrate. The significant influence of these variable parameters is observed on the morphology, growth rate and crystallinity. Thus these parameters are found to be deciding factors, which determine the surface reaction and growth kinetics that governed the final structure and controlled morphology of VGNs. The activation energy of the VGNs grown by PECVD is found to be 0.57 eV. A direct evidence of vertical growth through the nanographitic island is observed from temperature dependent growth of VGNs. Such understanding on growth of VGNs is not only useful for growth mechanism under plasma chemistry but also beneficial to get controlled and desired structure for field emission and energy storage application.

0 citations0 reviewsNo code linkedOpen access