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S. D. Mahanti

S. D. Mahanti contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

Antimony arsenide: Chemical ordering in the compound SbAs

The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here we show that the A7 structure can display chemical ordering of Sb and As, which were previously thought to mix randomly. Our structural characterization of the compound SbAs is performed by single-crystal and high-resolution synchrotron x-ray diffraction, and neutron and x-ray pair distribution function analysis. All least-squares refinements indicate ordering of Sb and As, resulting in a GeTe-type structure without inversion symmetry. High-temperature diffraction studies reveal an ordering transition around 550 K. Transport and infrared reflectivity measurements, along with first-principles calculations, confirm that SbAs is a semimetal, albeit with a direct band separation larger than that of Sb or As. Because even subtle substitutions in the semimetals, notably Bi_{1-x}Sb_x, can open semiconducting energy gaps, a further investigation of the interplay between chemical ordering and electronic structure on the A7 lattice is warranted.

preprint2011arXiv

Canted-spin-caused electric dipoles: a local symmetry theory

A pair of magnetic atoms with canted spins Sa, Sb can give rise to an electric dipole moment P. Several forms for the behavior of such a moment have appeared in the theoretical literature, some of which have been invoked to explain experimental results found in various multiferroic materials. The forms specifically are P1 ~ R x (Sa x Sb); P2 ~ Sa x Sb, and P3 ~ Sa (R . Sa) - Sb (R . Sb), where R is the relative position of the atoms and Sa, Sb are unit vectors. To unify and generalize these various forms we consider P as the most general quadratic function of the spin components that vanishes whenever Sa and Sb are collinear, i.e. we consider the most general expressions that require spin canting. The study reveals new forms. We generalize to the vector P, Moriya's symmetry considerations regarding the (scalar) Dzyaloshinskii-Moriya energy D. Sa x Sb (which led to restrictions on D). This provides a rigorous symmetry argument which shows that P1 is allowed no matter how high the symmetry of the atoms plus environment, and gives restrictions for all other contributions. The analysis leads to the suggestion of terms omitted in the existing microscopic models, suggests a new mechanism behind the ferroelectricity found in the 'proper screw structure' of CuXO2, X=Fe, Cr, and predicts an unusual antiferroelectric ordering in the antiferromagnetically and ferroelectrically ordered phase of RbFe(MoO4)2.

preprint2010arXiv

Impurity clustering and impurity-induced bands in PbTe-, SnTe-, and GeTe-based bulk thermoelectrics

Complex multicomponent systems based on PbTe, SnTe, and GeTe are of great interest for infrared devices and high-temperature thermoelectric applications. A deeper understanding of the atomic and electronic structure of these materials is crucial for explaining, predicting, and optimizing their properties, and to suggest new materials for better performance. In this work, we present our first-principles studies of the energy bands associated with various monovalent (Na, K, and Ag) and trivalent (Sb and Bi) impurities and impurity clusters in PbTe, SnTe, and GeTe using supercell models. We find that monovalent and trivalent impurity atoms tend to come close to one another and form impurity-rich clusters, and the electronic structure of the host materials is strongly perturbed by the impurities. There are impurity-induced bands associated with the trivalent impurities that split off from the conduction-band bottom with large shifts towards the valence-band top. This is due to the interaction between the $p$ states of the trivalent impurity cation and the divalent anion which tends to drive the systems towards metallicity. The introduction of monovalent impurities (in the presence of trivalent impurities) significantly reduces (in PbTe and GeTe) or slightly enhances (in SnTe) the effect of the trivalent impurities. One, therefore, can tailor the band gap and band structure near the band gap (hence transport properties) by choosing the type of impurity and its concentration or tuning the monovalent/trivalent ratio. Based on the calculated band structures, we are able to explain qualitatively the measured transport properties of the whole class of PbTe-, SnTe-, and GeTe-based bulk thermoelectrics.