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S. D. Mahanti

S. D. Mahanti appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

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Published work

12 published item(s)

preprint2016arXiv

Unusual UUDD magnetic chain structure of the spin-1/2 tetragonally distorted spinel GeCu2O4

GeCu2O4 exhibits a tetragonal spinel structure due to the strong Jahn-Teller distortion associated with Cu2+ ions. We show that its magnetic structure can be described as slabs composed of a pair of layers with orthogonally oriented spin 1/2 Cu chains in the basal ab plane. The spins between the two layers within a slab are collinearly aligned while the spin directions of neighboring slabs are perpendicular to each other. Interestingly, we find that spins along each chain form an unusual up-up-down-down (UUDD) pattern, suggesting a non-negligible nearest-neighbor biquadratic exchange interaction in the effective classical spin Hamiltonian. We hypothesize that spin-orbit coupling and orbital mixing of Cu2+ ions in this system is non-negligible, which calls for future calculations using perturbation theory with extended Hilbert (spin and orbital) space and calculations based on density functional theory including spin-orbit coupling and looking at the global stability of the UUDD state.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Charge ordering and self-assembled nanostructures in a fcc Coulomb lattice gas

The compositional ordering of Ag, Pb, Sb, Te ions in (AgSbTe$_{2}$)$_{x}$(PbTe)$_{2(1-x)}$ systems possessing a NaCl structure is studied using a Coulomb lattice gas (CLG) model on a face-centered cubic (fcc) lattice and Monte Carlo simulations. Our results show different possible microstructural orderings. Ordered superlattice structures formed out of AgSbTe$_{2}$ layers separated by Pb$_{2}$Te$_{2}$ layers are observed for a large range of $x$ values. For $x=0.5$, we see an array of tubular structures formed by AgSbTe$_{2}$ and Pb$_{2}$Te$_{2}$ blocks. For $x=1$, AgSbTe$_{2}$ has a body-centered tetragonal (bct) structure which is in agreement with previous Monte Carlo simulation results for restricted primitive model (RPM) at closed packed density. The phase diagram of this frustrated CLG system is discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic structure of Zr-Ni-Sn systems: role of clustering and nanostructures in Half-Heusler and Heusler limits

Half-Heusler and Heusler compounds have been of great interest for several decades for thermoelectric, magnetic, half-metallic and many other interesting properties. Among these systems, Zr-Ni-Sn compounds are interesting thermoelectrics which can go from semiconducting half-Heusler (HH) limit, ZrNiSn, to metallic Heusler (FH) limit, ZrNi$_2$Sn. Recently Makogo et al. [J. Am. Chem. Soc. 133, 18843 (2011)] found that dramatic improvement in the thermoelectric power factor of HH can be achieved by putting excess Ni into the system. This was attributed to an energy filtering mechanism due to the formation of FH nanostructures in the HH matrix. Using density functional theory we have investigated clustering and nanostructure formation in HH$_{1-x}$FH$_x$ systems near the HH and FH ends and found that excess Ni atoms in HH tend to stay close to each other and form nanoclusters of FH. On the other hand, there is competing interaction between Ni-vacancies in FH which prevent them from forming HH nano clusters. Effects of nano inclusions on the electronic structure at both HH and FH ends will be discussed.

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preprint2014arXiv

Thermoelectric properties of marcasite and pyrite FeX$_2$(X=Se,Te): A first principle study

Electronic structure and thermoelectric properties of marcasite (m) and synthetic pyrite (p) phases of FeX$_2$ (X=Se,Te) have been investigated using first principles density functional theory and Boltzmann transport equation. The plane wave pseudopotential approximation was used to study the structural properties and full-potential linear augmented plane wave method was used to obtain the electronic structure and thermoelectric properties (thermopower and power factor scaled by relaxation time). From total energy calculations we find that m-FeSe$_2$ and m-FeTe$_2$ are stable at ambient conditions and no structural transition from marcasite to pyrite is seen under the application of hydrostatic pressure. The calculated ground state structural properties agree quite well with available experiments. From the calculated thermoelectric properties, we find that both m and p forms are good candidates for thermoelectric applications. However, hole doped m-FeSe$_2$ appears to be the best among all the four systems.

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preprint2014arXiv

Tuning the magnetic exchange via a control of orbital hybridization in Cr2(Te1-xWx)O6

We report the complex magnetic phase diagram and electronic structure of Cr2(Te1-xWx)O6 systems. While compounds with different x values possess the same crystal structure, they display different magnetic structures below and above xc = 0.7, where both the transition temperature TN and sublattice magnetization (Ms) reach a minimum. Unlike many known cases where magnetic interactions are controlled either by injection of charge carriers or by structural distortion induced via chemical doping, in the present case it is achieved by tuning the orbital hybridization between Cr 3d and O 2p orbitals through W 5d states. The result is supported by ab-initio electronic structure calculations. Through this concept, we introduce a new approach to tune magnetic and electronic properties via chemical doping.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Bonds, bands, and bandgaps in tetrahedrally bonded ternary compounds: the role of group V Lone Pairs

An interesting class of tetrahedrally coordinated ternary compounds have attracted considerable interest because of their potential as good thermoelectrics. These compounds, denoted as I$_3$-V-VI$_4$, contain three monovalent-I (Cu, Ag), one nominally pentavalent-V (P, As, Sb, Bi), and four hexavalent-VI (S, Se, Te) atoms; and can be visualized as ternary derivatives of the II-VI zincblende or wurtzite semiconductors, obtained by starting from four unit cells of (II-VI) and replacing four type II atoms by three type I and one type V atoms. In trying to understand their electronic structures and transport properties, some fundamental questions arise: whether V atoms are indeed pentavalent and if not how do these compounds become semiconductors, what is the role of V lone pair electrons in the origin of band gaps, and what are the general characteristics of states near the valence band maxima and the conduction band minima. We answer some of these questions using ab initio calculations (density functional methods with both local and nonlocal exchange-correlation potential).

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Antimony arsenide: Chemical ordering in the compound SbAs

The semimetallic Group V elements display a wealth of correlated electron phenomena due to a small indirect band overlap that leads to relatively small, but equal, numbers of holes and electrons at the Fermi energy with high mobility. Their electronic bonding characteristics produce a unique crystal structure, the rhombohedral A7 structure, which accommodates lone pairs on each site. Here we show that the A7 structure can display chemical ordering of Sb and As, which were previously thought to mix randomly. Our structural characterization of the compound SbAs is performed by single-crystal and high-resolution synchrotron x-ray diffraction, and neutron and x-ray pair distribution function analysis. All least-squares refinements indicate ordering of Sb and As, resulting in a GeTe-type structure without inversion symmetry. High-temperature diffraction studies reveal an ordering transition around 550 K. Transport and infrared reflectivity measurements, along with first-principles calculations, confirm that SbAs is a semimetal, albeit with a direct band separation larger than that of Sb or As. Because even subtle substitutions in the semimetals, notably Bi_{1-x}Sb_x, can open semiconducting energy gaps, a further investigation of the interplay between chemical ordering and electronic structure on the A7 lattice is warranted.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3

In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab model and analysis of the partial density-of-states show that the background is consistent with bulk-like states with small amplitudes at the surface. The topological surface states coexist with bulk-like states in the valence band, appearing as a shoulder in the projected band structure. These results strongly support the picture suggested by recent scattering experiments of the quantum interference of topological and bulk-like surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Canted-spin-caused electric dipoles: a local symmetry theory

A pair of magnetic atoms with canted spins Sa, Sb can give rise to an electric dipole moment P. Several forms for the behavior of such a moment have appeared in the theoretical literature, some of which have been invoked to explain experimental results found in various multiferroic materials. The forms specifically are P1 ~ R x (Sa x Sb); P2 ~ Sa x Sb, and P3 ~ Sa (R . Sa) - Sb (R . Sb), where R is the relative position of the atoms and Sa, Sb are unit vectors. To unify and generalize these various forms we consider P as the most general quadratic function of the spin components that vanishes whenever Sa and Sb are collinear, i.e. we consider the most general expressions that require spin canting. The study reveals new forms. We generalize to the vector P, Moriya's symmetry considerations regarding the (scalar) Dzyaloshinskii-Moriya energy D. Sa x Sb (which led to restrictions on D). This provides a rigorous symmetry argument which shows that P1 is allowed no matter how high the symmetry of the atoms plus environment, and gives restrictions for all other contributions. The analysis leads to the suggestion of terms omitted in the existing microscopic models, suggests a new mechanism behind the ferroelectricity found in the 'proper screw structure' of CuXO2, X=Fe, Cr, and predicts an unusual antiferroelectric ordering in the antiferromagnetically and ferroelectrically ordered phase of RbFe(MoO4)2.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Frustrated classical Heisenberg and XY models in 2 dimensions with nearest neighbor exchange: exact solution for the ground state phase diagram

The ground state phase diagram is determined exactly for the frustrated classical Heisenberg model plus nearest-neighbor biquadratic exchange interactions on a 2-dimensional lattice. A square- and a rhombic-symmetry version are considered. There appear ferromagnetic, incommensurate-spiral, "up-up-down-down" (uudd) and canted ferromagnetic states, a non-spiral coplanar state that is an ordered vortex lattice, plus a non-coplanar ordered state (a "conical vortex lattice"). In the rhombic case, which adds biquadratic terms to the Heisenberg model used widely for insulating manganites, the uudd state found is the E-type state observed; this along with accounting essentially for the variety of ground states found in these materials, shows that this model probably contains the long-sought mechanism behind the uudd state.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Impurity clustering and impurity-induced bands in PbTe-, SnTe-, and GeTe-based bulk thermoelectrics

Complex multicomponent systems based on PbTe, SnTe, and GeTe are of great interest for infrared devices and high-temperature thermoelectric applications. A deeper understanding of the atomic and electronic structure of these materials is crucial for explaining, predicting, and optimizing their properties, and to suggest new materials for better performance. In this work, we present our first-principles studies of the energy bands associated with various monovalent (Na, K, and Ag) and trivalent (Sb and Bi) impurities and impurity clusters in PbTe, SnTe, and GeTe using supercell models. We find that monovalent and trivalent impurity atoms tend to come close to one another and form impurity-rich clusters, and the electronic structure of the host materials is strongly perturbed by the impurities. There are impurity-induced bands associated with the trivalent impurities that split off from the conduction-band bottom with large shifts towards the valence-band top. This is due to the interaction between the $p$ states of the trivalent impurity cation and the divalent anion which tends to drive the systems towards metallicity. The introduction of monovalent impurities (in the presence of trivalent impurities) significantly reduces (in PbTe and GeTe) or slightly enhances (in SnTe) the effect of the trivalent impurities. One, therefore, can tailor the band gap and band structure near the band gap (hence transport properties) by choosing the type of impurity and its concentration or tuning the monovalent/trivalent ratio. Based on the calculated band structures, we are able to explain qualitatively the measured transport properties of the whole class of PbTe-, SnTe-, and GeTe-based bulk thermoelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Defect induced rigidity enhancement in layered semiconductors

We discuss the mechanism responsible for the observed improvement in the structural properties of In doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can substitute for Ga or can go as an interstitial charged defect$(\text{In}_{\text{i}}^{\text{3+}})$. We find that $\text{In}_{\text{i}}^{\text{3+}}$ dramatically increases the shear stiffness of GaSe, explaining the observed enhancement in the rigidity of In doped p-GaSe. The mechanism responsible for rigidity enhancement discussed here is quite general and applicable to a large class of layered solids with weak interlayer bonding.

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