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S. Amaha

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cond-mat.mes-hall cond-mat.str-el

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preprint2016arXiv

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet optimally designed for fast spin control. This optimized design allows us to achieve the optimum Rabi oscillation quality factor Q = 140 at a Rabi frequency of 10 MHz in the frequency range two orders of magnitude higher than that achieved in previous studies. This leads to a qubit fidelity of 99.6 %, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum-dot-based qubits. This result can inspire contributions from the industrial and quantum computing communities.

preprint2016arXiv

Quantum dephasing in a gated GaAs triple quantum dot due to nonergodic noise

We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on timescales much shorter than the decorrelation time of the environmental noise. In this non-ergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutual relations, and demonstrate that they reflect the noise short-time dynamics.

preprint2014arXiv

Full control of quadruple quantum dot circuit charge states in the single electron regime

We report the realization of an array of four tunnel coupled quantum dots in the single electron regime, which is the first required step toward a scalable solid state spin qubit architecture. We achieve an efficient tunability of the system but also find out that the conditions to realize spin blockade readout are not as straightforwardly obtained as for double and triple quantum dot circuits. We use a simple capacitive model of the series quadruple quantum dots circuit to investigate its complex charge state diagrams and are able to find the most suitable configurations for future Pauli spin blockade measurements. We then experimentally realize the corresponding charge states with a good agreement to our model.

preprint2013arXiv

Excitation spectroscopy of few-electron states in artificial diatomic molecules

We study the excitation spectroscopy of few-electron, parallel coupled double quantum dots (QDs). By applying a finite source drain voltage to a double QD (DQD), the first excited states observed in nonequilibrium charging diagrams can be classified into two kinds in terms of the total effective electron number in the DQD, assuming a core filling. When there are an odd (even) number of electrons, one (two)-electron antibonding (triplet) state is observed as the first excited state. On the other hand, at a larger source drain voltage we observe higher excited states, where additional single-particle excited levels are involved. Eventually, we identify the excited states with a calculation using the Hubbard model and, in particular, we elucidate the quadruplet state, which is normally forbidden by the spin blockade caused by the selection rule.

preprint2011arXiv

Aharonov-Bohm Oscillations Changed by Indirect Interdot Tunneling via Electrodes in Parallel-Coupled Vertical Double Quantum Dots

Aharonov-Bohm (AB) oscillations are studied for a parallel coupled vertical double quantum dot with a common source and drain electrode. We observe AB oscillations of current via a one-electron bonding state as the ground state and an anti-bonding state as the excited state. As the center gate voltage becomes more negative, the oscillation period is clearly halved for both the bonding and antibonding states, and the phase changes by half a period for the antibonding state. This result can be explained by a calculation that takes account of the indirect interdot coupling via the two electrodes.

preprint2011arXiv

Kondo effects in a triangular triple quantum dot with lower symmetries

The triangular triple quantum dot is an interesting system which can demonstrate various types of the Kondo effects, such as the one due to the local spin S=1 moment caused by the Nagaoka ferromagnetic mechanism and the SU(4) Kondo effect. We theoretically study the low-temperature properties and the Kondo energy scale of the triangular triple quantum dot, using the Wilson numerical renormalization group. We have explored a wide parameter region of the electron-filling and distortions which break the symmetry of an equilateral structure. Our results give a comprehensive overview of how the Kondo behavior varies in the different the regions in the wide parameter space of the triangular triple quantum dot.

preprint2010arXiv

Transport properties of two laterally coupled vertical quantum dots in series with tunable inter-dot coupling

We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is large and positive, the two dots merge. As Vc is made less positive, two dots are formed whose coupling is reduced. We measure charging diagrams for positive and negative source-drain voltages in the weak coupling regime and observe current rectification due to the Pauli spin blockade when the hyperfine interaction between the electrons and the nuclei is suppressed.

preprint2009arXiv

Gate Adjustable Coherent Three and Four Level Mixing in a Vertical Quantum Dot Molecule

We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations caused by anharmonicity and anistrophy, applying different combinations of voltages to these gates allows us to alter the effective potential landscape of the two dots and hence influence the level mixing. We present here preliminary results from one three level crossing and one four level crossings high up in the energy spectrum of one of the probed quantum dots, and demonstrate that we are able to change significantly the energy dispersions with magnetic field in the vicinity of the crossing regions.