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Researcher profile

T. Hatano

T. Hatano contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mes-hall

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Published work

5 published item(s)

preprint2022arXiv

Inter- to Intra-Layer Resistivity Anisotropy of NdFeAs(O,H) with Various Hydrogen Concentrations

With molecular beam epitaxy and topotactic chemical reaction, we prepared NdFeAs(O,H) epitaxial thin films with various hydrogen concentrations on 5° vicinal cut MgO substrates. By measuring the resistivities along the longitudinal and transversal directions, the ab plane and the c axis resistivities (\{rho}_ab and \{rho}_c) were obtained. The resistivity anisotropy γ_\{rho}=\{rho}_c \ \{rho}_ab of NdFeAs(O,H) with various hydrogen concentrations was compared with that of NdFeAs(O,F). At the H concentrations which led to superconducting transition temperatures Tc over 40 K, γ_\r{ho} recorded ~100-150 at 50 K. On the other hand, a low γ_\{rho} value of 9 was observed with the mostly doped sample. The exponent \{beta} of the ab plane resistivity obtained by fitting a power law expression \{rho}_{ab}(T)=\{rho}_0+AT^\{beta} to the data was close to unity down to low temperature in the vicinity where the second antiferromagnetic phase locates, which may be related to the quantum critical point discussed at the over-doped side of the phase diagram.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Excitation spectroscopy of few-electron states in artificial diatomic molecules

We study the excitation spectroscopy of few-electron, parallel coupled double quantum dots (QDs). By applying a finite source drain voltage to a double QD (DQD), the first excited states observed in nonequilibrium charging diagrams can be classified into two kinds in terms of the total effective electron number in the DQD, assuming a core filling. When there are an odd (even) number of electrons, one (two)-electron antibonding (triplet) state is observed as the first excited state. On the other hand, at a larger source drain voltage we observe higher excited states, where additional single-particle excited levels are involved. Eventually, we identify the excited states with a calculation using the Hubbard model and, in particular, we elucidate the quadruplet state, which is normally forbidden by the spin blockade caused by the selection rule.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hot-spot formation in stacks of intrinsic Josephson junctions in Bi2Sr2CaCu2O8

We have studied experimentally and numerically temperature profiles and the formation of hot spots in intrinsic Josephson junction stacks in Bi2Sr2CaCu2O8 (BSCCO). The superconducting stacks are biased in a state where all junctions are resistive. The formation of hot spots in this system is shown to arise mainly from the strongly negative temperature coefficient of the c-axis resistivity of BSCCO at low temperatures. This leads to situations where the maximum temperature in the hot spot can be below or above the superconducting transition temperature Tc. The numerical simulations are in good agreement with the experimental observations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Modeling the linewidth dependence of coherent terahertz emission from intrinsic Josephson junction stacks in the hot-spot regime

Recently it has been found that, when operated at large input power, the linewidth of terahertz radiation emitted from intrinsic Josephson junction stacks can be as narrow as some megahertz. In this high-bias regime a hot spot coexists with regions which are still superconducting. Surprisingly, the linewidth was found to decrease with increasing bath temperature. We present a simple model describing the dynamics of the stack in the presence of a hot spot by two parallel arrays of pointlike Josephson junctions and an additional shunt resistor in parallel. Heat diffusion is taken into account by thermally coupling all elements to a bath at temperature T_b. We present current-voltage characteristics of the coupled system and calculations of the linewidth of the radiation as a function of T_b. In the presence of a spatial gradient of the junction parameters critical current and resistance, the linewidth deceases with increasing T_b, similar to the experimental observation.

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preprint2011arXiv

Aharonov-Bohm Oscillations Changed by Indirect Interdot Tunneling via Electrodes in Parallel-Coupled Vertical Double Quantum Dots

Aharonov-Bohm (AB) oscillations are studied for a parallel coupled vertical double quantum dot with a common source and drain electrode. We observe AB oscillations of current via a one-electron bonding state as the ground state and an anti-bonding state as the excited state. As the center gate voltage becomes more negative, the oscillation period is clearly halved for both the bonding and antibonding states, and the phase changes by half a period for the antibonding state. This result can be explained by a calculation that takes account of the indirect interdot coupling via the two electrodes.

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