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S. A. Dvoretsky

S. A. Dvoretsky appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-sciphysics.app-phphysics.optics

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Published work

34 published item(s)

preprint2026arXiv

Magnetic field-bias current interplay in HgTe-based three-terminal Josephson junctions

We investigate HgTe/Nb-based three-terminal Josephson junctions in T-shaped and X-shaped geometries and their critical current contours (CCCs). By decomposing the CCCs into the contributions from individual junctions, we uncover how bias current and magnetic field jointly determine the collective Josephson behavior. A perpendicular magnetic field induces a tunable crossover between SQUID-like and Fraunhofer-like interference patterns, controlled by the applied bias. Moreover, magnetic flux produces pronounced deformations of the CCC, enabling symmetry control in the $(I_1,I_2)$ plane. Remarkably, we identify a regime of strongly enhanced Josephson diode efficiency, reaching values up to $η\approx 0.8$ at low bias and magnetic field. The experimental results are quantitatively reproduced by resistively shunted junction (RSJ) simulations, which capture the coupled dynamics of current and flux in these multi-terminal superconducting systems.

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preprint2021arXiv

Multiple crossing of Landau levels of two-dimensional fermions in double HgTe quantum wells

The double quantum well systems consisting of two HgTe layers separated by a tunnel-transparent barrier are expected to manifest a variety of phase states including two-dimensional gapless semimetal and two-dimensional topological insulator. The presence of several subbands in such systems leads to a rich filling factor diagram in the quantum Hall regime. We have performed magnetotransport measurements of the HgTe-based double quantum wells in both gapless and gapped state and observed numerous crossings between the Landau levels belonging to different subbands. We analyze the Landau level crossing patterns and compare them to the results of theoretical calculations.

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preprint2020arXiv

Anomalous phase shift of Shubnikov - de Haas oscillations in HgTe quantum well with inverted energy spectrum

The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase shift of magneto-oscillations is detected: in the region of spin-unsplit peaks the longitudinal resistivity maxima are located at even filling factor numbers in contradiction with a conventional situation in 2D systems. It is shown that the observed features are associated with the inverted nature of the spectrum in the investigated quantum well with the electron-type conduction along the size-quantized subband H1 of HgTe band Γ8, for which the spin splitting is comparable to (and even greater than) the orbital one. The results obtained are compared with the phase shift effects of both magneto-oscillations and the plateau of the quantum Hall effect in monolayer graphene.

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preprint2020arXiv

Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states.

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preprint2020arXiv

Two-dimensional topological insulator state in double HgTe quantum well

The two-dimensional topological insulator phase has been observed previously in single HgTe-based quantum wells with inverted subband ordering. In double quantum wells (DQWs), coupling between the layers introduces additional degrees of freedom leading to a rich phase picture. By studying local and nonlocal resistance in HgTe-based DQWs, we observe both the gapless semimetal phase and the topological insulator phase, depending on parameters of the samples and according to theoretical predictions. Our work establishes the DQWs as a promising platform for realization of multilayer topological insulators.

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preprint2020arXiv

Weak antilocalization in partially relaxed 200-nm HgTe films

The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain resulting in an almost zero bulk energy gap. It has been shown that at all positions of the Fermi level the system exhibits a WAL conductivity correction superimposed on classical parabolic magnetoresistance. Since high mobility of carriers, the analysis of the obtained results was performed using a ballistic WAL theory. The maximum of the WAL conductivity correction amplitude was found at a Fermi level position near the bulk energy gap indicating to full decoupling of the surface carriers in these conditions. The WAL amplitude monotonously decreases when the density of either bulk electrons or holes increases that results from the increasing coupling between surface and bulk carriers.

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preprint2019arXiv

Density of states measurements for heavy subband of holes in HgTe quantum wells

Valence band in narrow HgTe quantum wells contains well-conductive Dirac-like light holes at the $Γ$ point and poorly conductive heavy hole subband located in the local valleys. Here we propose and employ two methods to measure the density of states for these heavy holes. The first method uses a gate-recharging technique to measure thermodynamical entropy per particle. As the Fermi level is tuned with gate voltage from light to heavy subband, the entropy increases dramatically, and the value of this increase gives an estimate for the density of states. The second method determines the density of states for heavy holes indirectly from the gate voltage dependence of the period of the Shubnikov-de Haas oscillations for light holes. The results obtained by both methods are in the reasonable agreement with each other. Our approaches can be applied to measure large effective carrier masses in other two-dimensional gated systems.

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preprint2019arXiv

Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.

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preprint2016arXiv

Strong coupling between a permalloy ferromagnetic contact and a helical edge channel in a narrow HgTe quantum well

We experimentally investigate spin-polarized electron transport between a permalloy ferromagnet and the edge of a two-dimensional electron system with band inversion, realized in a narrow, 8~nm wide HgTe quantum well. In zero magnetic field, we observe strong asymmetry of the edge potential distribution with respect to the ferromagnetic ground lead. This result indicates, that the helical edge channel, specific for the structures with band inversion even at the conductive bulk, is strongly coupled to the ferromagnetic side contact, possibly due to the effects of proximity magnetization. It allows selective and spin-sensitive contacting of helical edge states.

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preprint2016arXiv

Temperature-dependent magnetospectroscopy of HgTe quantum wells

We report on magnetospectroscopy of HgTe quantum wells in magnetic fields up to 45 T in temperature range from 4.2 K up to 185 K. We observe intra- and inter-band transitions from zero-mode Landau levels, which split from the bottom conduction and upper valence subbands, and merge under the applied magnetic field. To describe experimental results, realistic temperature-dependent calculations of Landau levels have been performed. We show that although our samples are topological insulators at low temperatures only, the signature of such phase persists in optical transitions at high temperatures and high magnetic fields. Our results demonstrate that temperature-dependent magnetospectroscopy is a powerful tool to discriminate trivial and topological insulator phases in HgTe quantum wells.

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preprint2015arXiv

Aharonov Bohm effect in 2D topological insulator

We present magnetotransport measurements in HgTe quantum well with inverted band structure, which expected to be a two-dimensional topological insulator having the bulk gap with helical gapless states at the edge. The negative magnetoresistance is observed in the local and nonlocal resistance configuration followed by the periodic oscillations damping with magnetic field. We attribute such behaviour to Aharonov-Bohm effect due to magnetic flux through the charge carrier puddles coupled to the helical edge states. The characteristic size of these puddles is about 100 nm.

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preprint2015arXiv

Andreev reflection at the edge of a two-dimentional semimetal

We investigate electron transport through the interface between a niobium superconductor and the edge of a two-dimensional semimetal, realized in a 20~nm wide HgTe quantum well. Experimentally, we observe that typical behavior of a single Andreev contact is complicated by both a pronounced zero-bias resistance anomaly and shallow subgap resistance oscillations with $1/n$ periodicity. These results are demonstrated to be independent of the superconducting material and should be regarded as specific to a 2D semimetal in a proximity with a superconductor. We interpret these effects to originate from the Andreev-like correlated process at the edge of a two-dimensional semimetal.

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preprint2015arXiv

Conductance oscillations at the interface between a superconductor and the helical edge channel in a narrow HgTe quantum well

We experimentally investigate electron transport through the interface between a superconductor and the edge of a two-dimensional electron system with band inversion. The interface is realized as a tunnel NbN side contact to a narrow 8~nm HgTe quantum well. It demonstrates a typical Andreev behavior with finite conductance within the superconducting gap. Surprisingly, the conductance is modulated by a number of equally-spaced oscillations. The oscillations are present only within the superconducting gap and at lowest, below 1~K, temperatures. The oscillations disappear completely in magnetic fields, normal to the two-dimensional electron system plane. In contrast, the oscillations' period is only weakly affected by the highest, up to 14~T, in-plane oriented magnetic fields. We interpret this behavior as the interference oscillations in a helical one-dimensional edge channel due to a proximity with a superconductor.

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preprint2015arXiv

Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film

We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a function of the Fermi energy. For high gate voltages we also detected cyclotron resonance (CR) of bulk carriers, with a mass about two times larger than that obtained for the surface states. The origin of the CR assisted photocurrent is discussed in terms of asymmetric scattering of TI surface carriers in the momentum space. Furthermore, we show that studying the photocurrent in gated samples provides a sensitive method to probe the effective masses and the mobility of 2D Dirac surface states, when the Fermi level lies in the bulk energy gap or even in the conduction band.

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preprint2015arXiv

Evidence on the macroscopic length scale spin coherence for the edge currents in a narrow HgTe quantum well

We experimentally investigate spin-polarized electron transport between two ferromagnetic contacts, placed at the edge of a two-dimensional electron system with band inversion. The system is realized in a narrow (8~nm) HgTe quantum well, the ferromagnetic side contacts are formed from a pre-magnetized permalloy film. In zero magnetic field, we find a significant edge current contribution to the transport between two ferromagnetic contacts. We experimentally demonstrate that this transport is sensitive to the mutual orientation of the magnetization directions of two 200~$μ$m-spaced ferromagnetic leads. This is a direct experimental evidence on the spin-coherent edge transport over the macroscopic distances. Thus, the spin is extremely robust at the edge of a two-dimensional electron system with band inversion, confirming the helical spin-resolved nature of edge currents.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe

We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands than in known HgTe single quantum wells (QW), which may be regulated by an applied gate voltage $V_g$. This large overlap manifests itself in a much higher critical field $B_c$ separating the range above it where the quantum peculiarities shift linearly with $V_g$ and the range below with a complicated behavior. In the latter case the $N$-shaped and double-$N$-shaped structures in the Hall magnetoresistance $ρ_{xy}(B)$ are observed with their scale in field pronouncedly enlarged as compared to the pictures observed in an analogous single QW. The coexisting electrons and holes were found in the whole investigated range of positive and negative $V_g$ as revealed from fits to the low-field $N$-shaped $ρ_{xy}(B)$ and from the Fourier analysis of oscillations in $ρ_{xx}(B)$. A peculiar feature here is that the found electron density $n$ remains almost constant in the whole range of investigated $V_g$ while the hole density $p$ drops down from the value a factor of 6 larger than $n$ at extreme negative $V_g$ to almost zero at extreme positive $V_g$ passing through the charge neutrality point. We show that this difference between $n$ and $p$ stems from an order of magnitude larger density of states for holes in the lateral valence band maxima than for electrons in the conduction band minimum. We interpret the observed reentrant sign-alternating $ρ_{xy}(B)$ between electronic and hole conductivities and its zero resistivity state in the quantum Hall range of fields on the basis of a calculated picture of magnetic levels in a DQW.

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preprint2015arXiv

Persistence of two-dimensional topological insulator state in wide HgTe quantum well

Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate edge state transport in the samples of about 1 mm size at temperatures below 1 K. Temperature dependence of the resistances suggests an insulating gap of the order of a few meV. In samples with sizes smaller than 10 $μ$m a quasiballistic transport via the edge states is observed.

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preprint2015arXiv

Probing quantum capacitance in a 3D topological insulator

We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magneto-capacitance oscillations probe, in contrast to magnetotransport, primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy.

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preprint2015arXiv

Shot noise of the edge transport in the inverted band HgTe quantum wells

We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temperature. The shot noise is well below the Poissonian value and characterized by the Fano factor with gate voltage and sample to sample variations in the range $0.1<F<0.3$. Given the fact that our devices are shorter than the most pessimistic estimate of the ballistic dephasing length, these observations exclude the possibility of one-dimensional helical edge transport. Instead, we suggest that a disordered multi-mode conduction is responsible for the edge transport in our experiment.

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preprint2014arXiv

Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions

We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect.

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preprint2013arXiv

Giant spin-polarized current in a Dirac fermion system at cyclotron resonance

We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and sweeping magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic fields by means of optical gating. The photocurent data, accompanied by measurements of radiation transmission as well as Shubnikov-de Haas and quantum Hall effects, give an evidence that the enhancement of the photocurrent is caused by cyclotron resonance in a Dirac fermion system. The developed theory shows that the current is spin polarized and originates from the spin dependent scattering of charge carriers heated by the radiation.

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preprint2013arXiv

Linear magnetoresistance in HgTe quantum wells

We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal symmetry and thereby, suppresses the edge state transport. A linear magnetoresistance is observed in low magnetic fields, when the chemical potential moves through the the bulk gap. That magnetoresistance is well described by numerical calculations of the edge states magnetotransport in the presence of nonmagnetic disorder. With magnetic field increasing the resistance, measured both in the local and nonlocal configurations first sharply decreases and then increases again in disagreement with the existing theories.

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preprint2013arXiv

Quantum Hall effect in n-p-n and n-2D Topological Insulator-n junctions

We have studied quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally-controlled density allowing n-p-n and n-2D TI-n junctions. The resistance reveals the fractional plateau $2h/e^{2}$ in n-p-n regime in the presence of the strong perpendicular magnetic field. We found that in n-2D TI-n regime the plateaux in resistance in not universal and results from the edge state equilibration at the interface between chiral and helical edge modes. We provided the simple model describing the resistance quantization in n-2D TI-n regime.

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preprint2013arXiv

The effect of electron--hole scattering on the transport properties of a 2D semimetal in a HgTe quantum well

The influence of e-h scattering on the conductivity and magnetotransport of 2D semimetallic HgTe is studied both theoretically and experimentally. The presence of e-h scattering leads to the friction between electron and holes resulting in a large temperature-dependent contribution to the transport coefficients. The coefficient of friction between electrons and holes is determined. The comparison of experimental data with the theory shows that the interaction between electrons and holes based on the long - range Coulomb potential strongly underestimates the e-h friction. The experimental results are in agreement with the model of strong short-range e-h interaction.

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preprint2013arXiv

The resistance of 2D Topological insulator in the absence of the quantized transport

We report unconventional transport properties of HgTe wells with inverted band structure: the resistance does not show insulating behavior even when it is of the order of $10^2\times h/2e^{2}$. The system is expected to be a two-dimensional topological insulator with a dominant edge state contribution. The results are inconsistent with theoretical models developed within the framework of the helical Luttinger liquid.

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preprint2013arXiv

Transition from insulating to metallic phase induced by in-plane magnetic field in HgTe quantum wells

We report transport measurements in HgTe-based quantum wells with well width of 8 nm, corresponding to quantum spin Hall state, subject to in-plane magnetic field. In the absence of the magnetic field the local and nonlocal resistances behave very similar, which confirms the edge state transport in our system. In the magnetic field, we observe a monotonic decrease of the resistance with saturation of local resistance, while nonlocal resistance disappears completely, independent of the gate voltage. We believe that these evidences of metallic behavior indicate a transition to a gapless two-dimensional phase, according to theoretical predictions. The influence of disorder on resistivity properties of HgTe quantum wells under in-plane magnetic field is discussed.

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preprint2013arXiv

Transport properties of a 3D topological insulator based on a strained high mobility HgTe film

We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface states into the conduction band. Magnetotransport measurements allow to disentangle the different contributions of conduction band electrons, holes and Dirac electrons to the conductivity. The results are are in line with previous claims that strained HgTe is a topological insulator with a bulk gap of ~15meV and gapless surface states.

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preprint2012arXiv

Effects of Spin Polarization in the HgTe Quantum Well

Magnetoresistivity features connected with the spin level coincidences under tilted fields in a $Γ_8$ conduction band of the HgTe quantum well were found to align along straight trajectories in a $(B_\bot,B_{||})$ plane between the field components perpendicular and parallel to the layer meaning a linear spin polarization dependence on magnetic field. Among the trajectories is a noticeable set of lines descending from a single point on the $B_{||}$ axis, which is shown to yield a field of the full spin polarization of the electronic system, in agreement with the data on the electron redistribution between spin subbands obtained from Fourier transforms of oscillations along circle trajectories in the $(B_\bot,B_{||})$ plane and with the point on the magnetoresistivity under pure $B_{||}$ separating a complicated weak field dependence from the monotonous one. The whole picture of coincidences is well described by the isotropic $g$-factor although its value is twice as small as that obtained from oscillations under pure perpendicular fields. The discrepancy is attributed to different manifestations of spin polarization phenomena in the coincidences and within the exchange enhanced spin gaps. In the quantum Hall range of $B_\bot$, the spin polarization manifests in anticrossings of magnetic levels, which were found to depend dramatically nonmonotonously on $B_\bot$.

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preprint2012arXiv

Nonlocal transport near the charge neutrality point in a two-dimensional electron-hole system

Nonlocal resistance is studied in a two-dimensional system with a simultaneous presence of electrons and holes in a 20 nm HgTe quantum well. A large nonlocal electric response is found near the charge neutrality point (CNP) in the presence of a perpendicular magnetic field. We attribute the observed nonlocality to the edge state transport via counter propagating chiral modes similar to the quantum spin Hall effect at zero magnetic field and graphene near Landau filling factor $ν=0$

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preprint2012arXiv

Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system

The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an unconventional behavior, different from the classical N-shaped dependence typical for bipolar systems with electron-hole asymmetry. The quantum features of magnetotransport are explained by means of numerical calculation of the Landau level spectrum based on the Kane Hamiltonian. The origin of the quantum Hall plateau σxy = 0 near the charge neutrality point is attributed to special features of Landau quantization in our system.

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preprint2011arXiv

Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well

The parallel field of a full spin polarization of the electron gas in a \Gamma8 conduction band of the HgTe quantum well was obtained from the magnetoresistance by three different ways in a zero and quasi-classical range of perpendicular field component Bper. In the quantum Hall range of Bper the spin polarization manifests in anticrossings of magnetic levels, which were found to strongly nonmonotonously depend on Bper.

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preprint2011arXiv

Transport in disordered two-dimensional topological insulator

We study experimentally the transport properties of "inverted" semiconductor HgTe-based quantum well, which is related to the two-dimensional topological insulator, in diffusive transport regime. We perform nonlocal electrical measurements in the absence of the magnetic field and observe large signal due to the edge states. It demonstrates, that the edge states can propagate over long distance 1 mm, and, therefore, there is no difference between local and non local electrical measurements in topological insulator. In the presence of the in-plane magnetic field we find strong decrease of the local resistance and complete suppression of the nonlocal resistance. We attribute this observation to the transition between topological insulator and bulk metal induced by the in-plane magnetic field.

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preprint2010arXiv

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz (THz) radiation in the QWs structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed.

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preprint2010arXiv

Quantum Hall effect near the charge neutrality point in two-dimensional electron-hole system

We study the transport properties of $HgTe$-based quantum wells containing simultaneously electrons and holes in magnetic field B. At the charge neutrality point (CNP) with nearly equal electron and hole densities, the resistance is found to increase very strongly with B while the Hall resistivity turns to zero. This behavior results in a wide plateau in the Hall conductivity $σ_{xy}\approx 0$ and in a minimum of diagonal conductivity $σ_{xx}$ at $ν=ν_p-ν_n=0$, where $ν_n$ and $ν_p$ are the electron and hole Landau filling factors. We suggest that the transport at the CNP point is determined by electron-hole "snake states" propagating along the $ν=0$ lines. Our observations are qualitatively similar to the quantum Hall effect in graphene as well as to the transport in random magnetic field with zero mean value.

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