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Source author record

D. A. Kozlov

D. A. Kozlov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conphysics.app-phphysics.optics

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Published work

12 published item(s)

preprint2026arXiv

Magnetic field-bias current interplay in HgTe-based three-terminal Josephson junctions

We investigate HgTe/Nb-based three-terminal Josephson junctions in T-shaped and X-shaped geometries and their critical current contours (CCCs). By decomposing the CCCs into the contributions from individual junctions, we uncover how bias current and magnetic field jointly determine the collective Josephson behavior. A perpendicular magnetic field induces a tunable crossover between SQUID-like and Fraunhofer-like interference patterns, controlled by the applied bias. Moreover, magnetic flux produces pronounced deformations of the CCC, enabling symmetry control in the $(I_1,I_2)$ plane. Remarkably, we identify a regime of strongly enhanced Josephson diode efficiency, reaching values up to $η\approx 0.8$ at low bias and magnetic field. The experimental results are quantitatively reproduced by resistively shunted junction (RSJ) simulations, which capture the coupled dynamics of current and flux in these multi-terminal superconducting systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum transport of Dirac fermions in HgTe gapless quantum wells

We study transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed, and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesocopic) samples. In micron-sized samples, we observe a magnetic field induced, quantized resistance ($\sim h/2e^{2}$) at Landau filling factor $ν=0$, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge $ν=0$ state and bulk $ν\neq 0$ hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Scattering anisotropy in HgTe (013) quantum well

We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal electron density near the charge neutrality point. The anisotropy increases with the increase of n and reaches about 10% when the Fermi level is within the first subband H1. There is a sharp increase of the anisotropy (up to 60%) when the Fermi level reaches the second subband E2. We conclude that the first effect is due to the small intra-subband anisotropic interface roughness scattering, and the second one is due to the strongly anisotropic inter-subband roughness scattering, but the microscopical reason of such a strong change in the anisotropy remains unknown.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states.

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preprint2020arXiv

Weak antilocalization in partially relaxed 200-nm HgTe films

The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain resulting in an almost zero bulk energy gap. It has been shown that at all positions of the Fermi level the system exhibits a WAL conductivity correction superimposed on classical parabolic magnetoresistance. Since high mobility of carriers, the analysis of the obtained results was performed using a ballistic WAL theory. The maximum of the WAL conductivity correction amplitude was found at a Fermi level position near the bulk energy gap indicating to full decoupling of the surface carriers in these conditions. The WAL amplitude monotonously decreases when the density of either bulk electrons or holes increases that results from the increasing coupling between surface and bulk carriers.

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preprint2019arXiv

Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

MIRO-like oscillations of magneto-resistivity in GaAs heterostructures induced by THz radiation

We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film

We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a function of the Fermi energy. For high gate voltages we also detected cyclotron resonance (CR) of bulk carriers, with a mass about two times larger than that obtained for the surface states. The origin of the CR assisted photocurrent is discussed in terms of asymmetric scattering of TI surface carriers in the momentum space. Furthermore, we show that studying the photocurrent in gated samples provides a sensitive method to probe the effective masses and the mobility of 2D Dirac surface states, when the Fermi level lies in the bulk energy gap or even in the conduction band.

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preprint2015arXiv

Probing quantum capacitance in a 3D topological insulator

We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magneto-capacitance oscillations probe, in contrast to magnetotransport, primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy.

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preprint2014arXiv

Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions

We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect.

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preprint2013arXiv

Giant spin-polarized current in a Dirac fermion system at cyclotron resonance

We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and sweeping magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic fields by means of optical gating. The photocurent data, accompanied by measurements of radiation transmission as well as Shubnikov-de Haas and quantum Hall effects, give an evidence that the enhancement of the photocurrent is caused by cyclotron resonance in a Dirac fermion system. The developed theory shows that the current is spin polarized and originates from the spin dependent scattering of charge carriers heated by the radiation.

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preprint2013arXiv

Transport properties of a 3D topological insulator based on a strained high mobility HgTe film

We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x10^5 cm^2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface states into the conduction band. Magnetotransport measurements allow to disentangle the different contributions of conduction band electrons, holes and Dirac electrons to the conductivity. The results are are in line with previous claims that strained HgTe is a topological insulator with a bulk gap of ~15meV and gapless surface states.

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