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Ryosho Nakane appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Memristive systems and devices are potentially available for implementing reservoir computing (RC) systems applied to pattern recognition. However, the computational ability of memristive RC systems depends on intertwined factors such as system architectures and physical properties of memristive elements, which complicates identifying the key factor for system performance. Here we develop a simulation platform for RC with memristor device networks, which enables testing different system designs for performance improvement. Numerical simulations show that the memristor-network-based RC systems can yield high computational performance comparable to that of state-of-the-art methods in three time series classification tasks. We demonstrate that the excellent and robust computation under device-to-device variability can be achieved by appropriately setting network structures, nonlinearity of memristors, and pre/post-processing, which increases the potential for reliable computation with unreliable component devices. Our results contribute to an establishment of a design guide for memristive reservoirs toward a realization of energy-efficient machine learning hardware.
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The magnetoresistance ratio of the spin MOSFET with a channel length of 0.4$μ$m was increased by a factor of 6 from that in our previous paper [Phys. Rev. B 99, 165301 (2019)] by lowering the parasitic resistances at the source/drain junctions with highly-phosphorus-doped n+-Si regions and by increasing the lateral electric field in the channel along the electron transport, called "spin drift". Clear Hanle signals with some oscillation peaks were observed for the spin MOSFET with a channel length of 10 $μ$ m under the lateral electric field, indicating that the effective spin diffusion length is dramatically enhanced by the spin drift. By taking into account the n+-Si regions and the spin drift in the channel, one-dimensional analytic functions were derived for analyzing the effect of the spin drift on the spin transport through the channel and these functions were found to explain almost all the experimental results. From the calculated spin current and spin distribution, it was revealed that almost all the spins are unflipped during the spin-drift-assisted transport through the 0.4-$μ$m-long inversion channel, but the most part of the injected spins from the source electrode are relaxed in the n+-Si regions of both the source and drain junctions. This means that the spin drift is useful and precise design of the device structure is essential to obtain a higher magnetoresistance ratio. Furthermore, we showed that the effective spin resistances that are introduced in this study are very helpful to understand how to improve the magnetoresistance ratio of spin MOSFETs for practical use.
We have investigated the transport and magnetic properties of group-IV ferromagnetic semiconductor Ge1-xFex films (x = 1.0 and 2.3 %) with and without boron doping grown by molecular beam epitaxy (MBE). In order to accurately measure the transport properties of 100-nm-thick Ge1-xFex films, (001)-oriented silicon-on-insulator (SOI) wafers with an ultra-thin Si body layer (~5 nm) were used as substrates. Owing to the low Fe content, the hole concentration and mobility in the Ge1-xFex films were exactly estimated by Hall measurements because the anomalous Hall effect in these films was found to be negligibly small. By boron doping, we increased the hole concentration in Ge1-xFex from ~1018 cm-3 to ~1020 cm-3 (x = 1.0%) and to ~1019 cm-3 (x = 2.3%), but no correlation was observed between the hole concentration and magnetic properties. This result presents a contrast to the hole-induced ferromagnetism in III-V ferromagnetic semiconductors.
We have investigated the influence of anisotropic magnetoresistance (AMR) on nonlocal signals in Si-based multi-terminal devices with ferromagnetic Fe electrodes. The AMR of the Fe electrodes was found to have a significant influence on nonlocal signals when the in-plane device structure is not optimized. Moreover, realization of a pure spin current by spin diffusion was found to be virtually impossible because of the electric potential distribution in the depth direction in the Si channel. Although apparent signals indicating the spin-valve effect were not detected, we mainly present structural influence on the electric potential distribution which is indispensable for the analyses of spin-dependent transport.
The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with the out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the [001] direction with the in-plane epitaxial relation of CFG[100]||GOI[100], although the film slightly contained a texture component. The strong (111) and (200) superlattice diffraction intensities indicated that the CFG film had a high degree of order for the L21 structure. Cross-sectional high-resolution transmission electron microscopy images of the film implied that the film had the dominant epitaxial and slight texture components, which was consistent with the XRD measurements. The epitaxial component was grown directly on the BOX layer of the SOI substrate without the formation of any interfacial layer.
The authors developed a new analysis technique for atomic disorder structures in full-Heusler alloys using x-ray diffraction (XRD) with Co-Ka and Cu-Ka sources. The developed technique can quantitatively evaluate all the atomic disorders for the exchanges between X, Y, and Z atoms in full-Heusler X2YZ alloys. In particular, the technique can treat the DO3 disorder that cannot be analyzed by ordinary Cu-Ka XRD. By applying this technique to full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing (RTA), RTA-temperature (TA) dependence of the atomic disorders was revealed. The site occupancies of Co, Fe, and Si atoms on their original sites were 98 %, 90 %, and 93 %, respectively, for the film formed at TA = 800 degree C, indicating that the RTA-formed Co2FeSi film had the L21 structure with the extremely high degree of ordering.
The authors developed a new analysis approach for evaluation of atomic ordering in full-Heusler alloys, which is extension of the commonly used Webster model. Our model can give accurate physical formalism for the degree of atomic ordering in the L21 structure, including correction with respect to the fully disordered A2 structure, i.e., the model can directly evaluate the degree of L21-ordering under a lower ordering structure than the complete B2-ordering structure. The proposed model was applied to full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing. The film formed at TA = 800 C showed a relatively high degree of L21-ordering of 83 % under a high degree of B2-ordering of 97 %.
The authors developed a preparation technique of Co_2FeSi full-Heusler alloy films with the L2_1-ordered structure on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The Co_2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI (001) layer and Fe/Co layers deposited on it. The highly (110)-oriented L2_1-phase polycrystalline full-Heusler alloy films were obtained at the RTA temperature of 700 C. Crystallographic and magnetic properties of the RTA-formed full-Heusler alloy films were qualitatively the same as those of bulk full-Heusler alloy. This technique is compatible with metal source/drain formation process in advanced CMOS technology and would be applicable to the fabrication of the half-metallic source/drain of MOSFET type of spin transistors.