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Ruta Kulkarni

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cond-mat.mtrl-sci cond-mat.str-el physics.optics

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preprint2022arXiv

Terahertz Optical Properties and Birefringence in Single Crystal Vanadium doped [100] \b{eta}-Ga2O3

We report the Terahertz optical properties of the Vanadium doped [100] \b{eta}-Ga2O3 using Terahertz Time-Domain Spectroscopy (THz-TDS). The V-doped \b{eta}-Ga2O3 crystal shows strong birefringence in the 0.2-2.4 THz range. Further, phase retardation by the V-doped \b{eta}-Ga2O3 has been measured over the whole THz range by Terahertz Time-Domain Polarimetry (THz-TDP). It is observed that the V-doped \b{eta}-Ga2O3 crystal behaves both as a quarter waveplate (QWP) at 0.38, 1.08, 1.71, 2.28 THz, and a half waveplate (HWP) at 0.74 and 1.94 THz, respectively.

preprint2022arXiv

Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization

We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3) can be synthesized. The optical properties of such high resistive V-doped b-Ga2O3 are significantly different compared to the undoped and n-doped crystals. We study the polarization-dependent Raman spectra, polarization-dependent transmission, temperature-dependent photoluminescence in the optical wavelength range and the THz transmission properties in the 0.2 - 2.6 THz range. The V-doped insulating Ga2O3 crystals show strong birefringence with refractive index contrast Dn of 0.3+-0.02 at 1 THz, suggesting it to be an ideal material for optical applications in the THz region.

preprint2019arXiv

Weak antilocalization in a noncentrosymmetric CaAgBi single crystal

We report on the single crystal growth and transport properties of a topological semimetal CaAgBi which crystallises in the hexagonal $ABC-$type structure with the non-centrosymmetric space group $\mathit{P6_3mc}$ (No. 186). The transverse magnetoresistance measurements with current in the basal plane of the hexagonal crystal structure reveal a value of about 30 % for I // [10-10] direction and about 50 % for I // [1-210] direction at 10 K in an applied magnetic field of 14 T. The magnetoresistance shows a cusp-like behavior in the low magnetic-field region, suggesting the presence of weak antilocalization effect for temperatures less than 100 K. The Hall measurements reveal that predominant charge carriers are $p$ type exhibiting a linear behavior for fields up to 14 T and can be explained based on the single band model. The magnetoconductance of CaAgBi is analysed based on the modified Hikami-Larkin-Nagaoka (HLN) model. Our first-principles calculations within a density-functional theory framework reveal that CaAgBi supports a topological Dirac semimetal state with Dirac points located on the rotational axis slightly above the Fermi level and are protected by $C_{6v}$ point-group symmetry. The Fermi surface consists of both the electron and hole pockets. However, the size of hole pockets is much larger than electron pockets suggesting the dominant $p$ type carriers in accord with our experimental results.

preprint2015arXiv

Anisotropic physical properties of PrRhAl$_4$Si$_2$ single crystal a non-magnetic singlet ground state compound

We have grown the single crystal of PrRhAl$_4$Si$_2$, which crystallizes in the tetragonal crystal structure. From the low temperature physical property measurements like, magnetic susceptibility, magnetization, heat capacity and electrical resistivity, we found that this compound does not show any magnetic ordering down to 70~mK. Our crystal field calculations on the magnetic susceptibility and specific heat measurements reveal that the 9-fold degenerate $(2J+1)$ levels of Pr atom in PrRhAl$_4$Si$_2$, splits into 7 levels, with a singlet ground state and a well separated excited doublet state at 123~K, with a overall level splitting energy of 320~K.

preprint2014arXiv

Anisotropic magnetic properties and giant magnetocaloric effect of PrSi single crystal

Single crystal of PrSi was grown by Czochralski method in a tetra-arc furnace. Powder x-ray diffraction of the as grown crystal revealed that PrSi crystallizes in FeB$-$type structure with space group $Pnma$ (no. 62). PrSi undergoes a ferromagnetic transition at 52 K with [010] direction as the easy axis of magnetization. Heat capacity data confirm the bulk nature of the transition at 52 K and exhibit a huge anomaly at the transition. A sharp rise in the low temperature heat capacity has been observed (below 5 K) which is attributed to the $^{141}$Pr nuclear Schottky heat capacity arising from the hyperfine field of the Pr moment. The estimated Pr magnetic moment 2.88 $μ_{\rm B}$/Pr from the hyperfine splitting is in agreement with the saturation magnetization value obtained from the magnetization data measured at 2 K. From the crystal electric field (CEF) analysis of the magnetic susceptibility, magnetization and the heat capacity data it is found that the degenerate $J = 4$ Hund's rule derived state of Pr$^{3+}$-ion splits into nine singlets with an overall splitting of 284 K, the first excited singlet state separated by just 9 K from the ground state. The magnetic ordering in PrGe appears to be due to the exchange generated admixture of low lying crystal field levels. Magnetocaloric effect (MCE) has been investigated from magnetization data along all the three principal crystallographic directions. Large magnetic entropy change, $-ΔS_M = $22.2 J/kg K, and the relative cooling power, RCP = $460$ J/kg, characteristic of giant magneto caloric effect are achieved near the transition temperature ($T_{\rm C}$ = 52 K) for $H =$~70 kOe along $[010]$. Furthermore, the PrSi single crystal exhibits a giant MCE anisotropy.

preprint2011arXiv

Antiferromagnetic ordering in EuPtGe$_3$ single crystal

The magnetic properties of single crystalline EuPtGe$_3$, crystallizing in the non-centrosymmetric BaNiSn$_3$-type crystal structure, have been studied by means of magnetisation, electrical resistivity, heat capacity and $^{151}$Eu Mössbauer spectroscopy. The susceptibility and heat capacity data indicate a magnetic transition at $T_{\rm N}$ = 11\,K. The Mössbauer data confirm this conclusion, but evidence a slight first order character of the transition. Analysing the magnetisation data using a mean field model with two antiferromagnetically coupled sublattices allows to explain some aspects of the magnetic behaviour, and to derive the first and second neighbour exchange integrals in EuPtGe$_3$.