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Ruixiang Fei

Ruixiang Fei appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phphysics.opticscond-mat.stat-mechcond-mat.other

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Published work

14 published item(s)

preprint2020arXiv

Artificial Multiferroics and Enhanced Magnetoelectric Effect in van der Waals Heterostructures

Multiferroic materials with coupled ferroelectric and ferromagnetic properties are important for multifunctional devices due to their potential ability of controlling magnetism via electric field, and vice versa. The recent discoveries of two-dimensional ferromagnetic and ferroelectric materials have ignited tremendous research interest and aroused hope to search for two-dimensional multiferroics. However, intrinsic two-dimensional multiferroic materials and, particularly, those with strong magnetoelectric couplings are still rare to date. In this paper, using first-principles simulations, we propose artificial two-dimensional multiferroics via a van der Waals heterostructure formed by ferromagnetic bilayer chromium triiodide (CrI3) and ferroelectric monolayer Sc2CO2. In addition to the coexistence of ferromagnetism and ferroelectricity, our calculations show that, by switching the electric polarization of Sc2CO2, we can tune the interlayer magnetic couplings of bilayer CrI3 between ferromagnetic and antiferromagnetic states. We further reveal that such a strong magnetoelectric effect is from a dramatic change of the band alignment induced by the strong build-in electric polarization in Sc2CO2 and the subsequent change of the interlayer magnetic coupling of bilayer CrI3. These artificial multiferroics and enhanced magnetoelectric effect give rise to realizing multifunctional nanoelectronics by van der Waals heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant linearly-polarized photogalvanic effect and second harmonic generation in two-dimensional axion insulators

The second-order nonlinear optical (NLO) processes, such as the photogalvanic effect and second-order harmonic generation (SHG), play crucial roles in probing and controlling light-matter interactions for energy and device applications. To date, most studies of second-order NLO processes focus on materials with broken spatial inversion symmetry, such as proper ferroelectrics and noncentrosymmetric Weyl semimetals. Nevertheless, inversion symmetry of Shubnikov groups can be broken via spin-ordering in centrosymmetric crystals. Unfortunately, these materials are less common, and their NLO responses are usually weak. Combining quantum perturbation theory and first-principles simulations, we predict a giant injection-current photogalvanic effect and SHG in a family of emerging axion insulators, the even septuple layers of MnBi2Te4 (MBT) materials that exhibit the zero-plateau quantum anomalous Hall (QAH) effect. Their amplitudes of injection current and SHG are about two orders of magnitude larger than those of widely used ferroelectrics, such as BiFeO3 and LiNbO3. Moreover, unlike the usual injection current observed under circularly-polarized light, the injection photocurrent of MBTs only emerges under linearly polarized light, making it convenient for device applications. These unique characters are from a combination effect of parity-time symmetry, three-fold rotation symmetry, and significant spin-orbit coupling. These enhanced NLO effects are valuable for characterizing subtle topological orders in QAH systems and also shed light on novel infrared photo-detector and photovoltaic applications based on magnetic topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Intrinsic Spin Photogalvanic Effect in Nonmagnetic Insulator

We show that with the help of spin-orbit coupling, nonlinear light-matter interactions can efficiently couple with spin and valley degrees of freedom. This revealed spin photogalvanic effect can generate the long-time pursued intrinsic pure spin current (PSC) in non-centrosymmetric nonmagnetic insulators. Different from the spin and valley Hall effect, such a photo-driven spin current is universal and can be generated without external bias field. Using first-principles simulation, we study monolayer transition metal dichalcogenides (TMDs) to demonstrate this effect and confirm an enhanced PSC under linearly polarized photoexcitation. The amplitude of the PSC is one order larger than that of the charge current observed in monolayer TMDs. This exotic nonlinear light-spin interaction indicates that light can be utilized as a rapid fashion to manipulate the spin-polarized current, which is crucial for future low-dissipation nanodevices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Nonreciprocal Second-Harmonic Generation in Few-Layer Chromium Triiodide

It is of fundamental importance but challenging to simultaneously identify atomic and magnetic configurations of two-dimensional van der Waals materials. In this work, we show that the nonreciprocal second-harmonic generation (SHG) can be a powerful tool to answer this challenge. Despite the preserved lattice inversion symmetry, the interlayer antiferromagnetic order and spin-orbit coupling generate enhanced SHG in PT-symmetric bilayer chromium triiodide (CrI3). Importantly, the in-plane polarization-resolved SHG is sensitive to subtly different interlayer structures that cannot be told by linear optical spectra. Beyond bilayer, we further predict that the intensity and angle-resolved SHG can be employed to identify both interlayer atomic and magnetic configurations of trilayer CrI3. Our first-principles results agree with available measurements and show the potential of SHG as a non-contacting approach to explore correlations between interlayer structures and magnetic orders of emerging ultra-thin magnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Curie Temperature of Emerging Two-Dimensional Magnetic Structures

Recent realizations of intrinsic, long-range magnetic orders in two-dimensional (2D) van der Waals materials have ignited tremendous research interests. In this work, we employ the XXZ Heisenberg model and Monte Carlo simulations to study a fundamental property of these emerging 2D magnetic materials, the Curie temperature (Tc). By including both onsite and neighbor couplings extracted from first-principles simulations, we have calculated Tc of monolayer chromium trihalides and Cr2Ge2Te6, which are of broad interests currently, and the simulation results agree with available measurements. We also clarify the roles played by anisotropic and isotropic interactions in deciding Tc of magnetic orders. Particularly, we find a universal, linear dependence between Tc and magnetic interactions within the parameter space of realistic materials. With this linear dependence, we can predict Tc of general 2D lattice structures, omitting the Monte Carlo simulations. Compared with the widely used Ising model, mean-field theory, and spin-wave theory, this work provides a convenient and quantitative estimation of Tc, giving hope to speeding up the search for novel 2D materials with higher Curie temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Shift current bulk photovoltaic effect influenced by quasiparticles and excitons

We compute the shift current bulk photovoltaic effect (BPVE) in bulk BaTiO$_3$ and two-dimensional monochalcogenide SnSe considering quasi-particle corrections and exciton effects. We explore changes in shift current peak position and magnitude reduction due to band renormalization. For BaTiO$_3$, we demonstrate that shift current is reduced near the band edge due to exciton effects. Comparison of these results with experiments on BaTiO$_3$ indicate that mechanisms other than shift current may be contributing to BPVE. Additionally, we reveal that the shift current near the band gap shows only a small change due to excitons in two-dimensional SnSe, suggesting that the thin film geometry provides a feasible way to reduce the exciton effect on the shift current. These results suggest that many-body corrections are important for accurate assessments of bulk photovoltaic materials and to understand the mechanisms behind the BPVE

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides

Ferroelectricity usually fades away when materials are thinned down below a critical value. Employing the first-principles density functional theory and modern theory of polarization, we show that the unique ionic-potential anharmonicity can induce spontaneous in-plane electrical polarizations and ferroelectricity in monolayer group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se). Using Monte Carlo simulations with an effective Hamiltonian extracted from the parameterized energy space, we show these materials exhibit a two-dimensional ferroelectric phase transition that is described by fourth-order Landau theory. We also show the ferroelectricity in these materials is robust and the corresponding Curie temperature is higher than room temperature, making these materials promising for realizing ultra-thin ferroelectric devices of broad interest.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS

We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their characteristic piezoelectric coefficients are about two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique "puckered" C2v symmetry and weaker chemical bonds of monolayer group IV monochalcogenides. Given the achieved experimental advances in fabrication of monolayers, their flexible character and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications, such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Topological Protected Dirac Cones in Compressed Bulk Black Phosphorus

Using the k.p theory and first-principles simulations, we report that applying a moderate pressure (> 0.6 GPa) on black phosphorus can diminish its band gap and produce one-dimensional and even two-dimensional (2D) Dirac cones, distinguishing this material for use in novel non-compound topological insulators. Similar to topological insulators, these 2D Dirac cones result from two competing mechanisms: the unique linear band dispersion tends to open a gap via a "pseudo spin-orbit" coupling, while the band symmetry requirements preserve the material's gapless spectrum. Moreover, these unique Dirac cones are bulk states that do not require time-reversal symmetry, thus they are robust even in the presence of surface or magnetic perturbations. Ultimately, we show that our predictions can be detected by the material's unusual Landau levels.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene

Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively-powered electronic systems. The conversion efficiencies of such devices are quantified by the dimensionless thermoelectric figure of merit (ZT), which is proportional to the ratio of a device's electrical conductance to its thermal conductance. High ZT (>2) has been achieved in materials via all-scale hierarchical architecturing. This efficiency holds at high temperatures (700K~900K) but quickly diminishes at lower temperatures. In this paper, a recently-fabricated two-dimensional (2D) semiconductor called phosphorene (monolayer black phosphorus) is assessed for its thermoelectric capabilities. First-principles and model calculations reveal that phosphorene possesses spatially-anisotropic electrical and thermal conductances. The prominent electrical and thermal conducting directions are orthogonal to one another, enhancing the ratio of these conductances. As a result, ZT can reach 2.5 (the criterion for commercial deployment) along the armchair direction of phosphorene at T=500K and is greater than 1 even at room temperature given moderate doping (~2 x 10^16 m-2). Ultimately, phosphorene stands out as an environmentally sound thermoelectric material with unprecedented qualities: intrinsically, it is a mechanically flexible material that converts heat energy with high efficiency at low temperatures (~ 300K) - one whose performance does not require any sophisticated engineering techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Lattice Vibrational Modes and Raman Scattering Spectra of Strained Phosphorene

Strain is prominent in fabricated samples of two-dimensional semiconductors and it also serves as an exploitable tool for engineering their properties. However, quantifying strain and characterizing its spatially inhomogeneous distribution across a material are challenging tasks. Here, we report the lattice vibrational modes and corresponding Raman spectra of strained monolayer black phosphorus (phosphorene) by first-principles simulations. We show that frequencies of vibrational modes of phosphorene and their Raman scattering peaks exhibit substantial and distinct shifts according to the types and size of strain. Therefore, combined with high spatial-resolution Raman scattering measurements, our calculated results can quantify strain distributions in phosphorene. This information is essential for understanding structures of future large-scale fabrication and strain engineering of phosphorene.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quantum Oscillations in Black Phosphorus Two-dimensional Electron Gas

Two-dimensional electron gases (2DEG) have been an important source of experimental discovery and conceptual development in condensed matter physics for decades. When combined with the unique electronic properties of two-dimensional (2D) crystals, rich new physical phenomena can be probed at the quantum level. Here, we create a new 2DEG in black phosphorus, a recent member of the two-dimensional atomic crystal family, using a gate electric field. We achieve high carrier mobility in black phosphorus 2DEG by placing it on a hexagonal boron nitride substrate (h-BN). This allows us, for the first time, to observe quantum oscillations in this material. The temperature and magnetic field dependence of the oscillations yields crucial information about the system, such as cyclotron mass and lifetime of its charge carriers. Our results, coupled with the fact that black phosphorus possesses anisotropic energy bands with a tunable, direct bandgap, distinguishes black phosphorus 2DEG as a novel system with unique electronic and optoelectronic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus

Newly fabricated monolayer phosphorene and its few-layer structures are expected to be promising for electronic and optical applications because of their finite direct band gaps and sizable but anisotropic electronic mobility. By first-principles simulations, we show that this unique anisotropic conductance can be controlled by using simple strain conditions. With the appropriate biaxial or uniaxial strain, we can rotate the preferred conducting direction by 90 degrees. This will be of useful for exploring quantum Hall effects, and exotic electronic and mechanical applications based on phosphorene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device

By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.

0 citations0 reviewsNo code linkedOpen access