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Rui He

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Published work

18 published item(s)

preprint2026arXiv

The grip of grammar on meaning uncertainty: cross-linguistic evidence, neural correlates, and clinical relevance

Isolated word meanings are inherently uncertain. This uncertainty reduces when they are combined and anchored in context. We propose that grammar compresses meaning uncertainty cross-linguistically, which is reflected in brain and selectively disrupted in disorders. Compression was operationalized as the relative difference between non-contextual surprisal estimated from lexical frequency, and contextual surprisal from grammar-sensitive models. In narratives from 20 languages, contextual surprisal reduced frequency-based surprisal. This reduction closely tracked the surprisal cost of reversing word order, and scaled with richer, non-redundant lexis as organized by more complex but optimal dependency structure. During fMRI, surprisal and its reduction explained BOLD activity for comprehension and production in overlapping but distinct regions. Uncertainty reduction was significantly attenuated in aphasia, dementia, and schizophrenia, but remained intact where primary deficit is not language. These findings position uncertainty reduction via grammar as a foundational concept that illuminates principles, brain basis, and disruptions of language.

preprint2025arXiv

Polarization-Differential Loss Enabled High Polarization Extinction in Hollow-Core Fibers

Delivering a well defined state of polarization over hollow core fibres (HCFs) is pivotal for next generation ultra stable photonic systems. Yet in all existing HCFs, whether birefringent or not, their polarization extinction ratio (PER) rapidly deteriorates during propagation or under mechanical disturbance, leaving no practical high and stable PER solution. Here, we break this impasse by embedding a polarization differential loss (PDL) mechanism directly into the cladding architecture.

preprint2022arXiv

Effect of anomalous magnetic moment on the chiral transition at zero temperature in a strong magnetic field

The effect of the anomalous magnetic moment (AMM) on the chiral restoration is investigated at zero temperature in the strong magnetic fields with the vacuum magnetic regularization scheme. It is shown that the chiral restoration diagram sensitively depends on the AMM in the ultrastrong magnetic fields. In our work, the parameterization of AMM is employed as proportional to the square of the chiral condensate. The critical chemical potential is found to decrease linearly by the increasing coefficient in the AMM scale. At a smaller scale of the AMM, the critical chemical potential could go down and then grow up as the magnetic field increases. But at a larger scale, the magnetic catalysis on the critical chemical potential would not happen anymore.

preprint2022arXiv

High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell

Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite tandems is lagging far behind their rigid counterparts primarily due to the challenges in developing efficient wide-bandgap (WBG) perovskite solar cells on the flexible substrates as well as the low open-circuit voltage (VOC) in the WBG perovskite subcell. Here, we report that the use of self-assembled monolayers as hole-selective contact effectively suppresses the interfacial recombination and allows the subsequent uniform growth of a 1.77 eV WBG perovskite with superior optoelectronic quality. In addition, we employ a post-deposition treatment with 2-thiopheneethylammonium chloride to further suppress the bulk and interfacial recombination, boosting the VOC of the WBG top cell to 1.29 V. Based on this, we present the first proof-of-concept four-terminal all-perovskite flexible TSC with a PCE of 22.6%. When integrating into two-terminal flexible tandems, we achieved 23.8% flexible all-perovskite TSCs with a superior VOC of 2.1 V, which is on par with the VOC reported on the 28% all-perovskite tandems grown on the rigid substrate.

preprint2022arXiv

Masked Autoencoders for Generic Event Boundary Detection CVPR'2022 Kinetics-GEBD Challenge

Generic Event Boundary Detection (GEBD) tasks aim at detecting generic, taxonomy-free event boundaries that segment a whole video into chunks. In this paper, we apply Masked Autoencoders to improve algorithm performance on the GEBD tasks. Our approach mainly adopted the ensemble of Masked Autoencoders fine-tuned on the GEBD task as a self-supervised learner with other base models. Moreover, we also use a semi-supervised pseudo-label method to take full advantage of the abundant unlabeled Kinetics-400 data while training. In addition, we propose a soft-label method to partially balance the positive and negative samples and alleviate the problem of ambiguous labeling in this task. Lastly, a tricky segmentation alignment policy is implemented to refine boundaries predicted by our models to more accurate locations. With our approach, we achieved 85.94% on the F1-score on the Kinetics-GEBD test set, which improved the F1-score by 2.31% compared to the winner of the 2021 Kinetics-GEBD Challenge. Our code is available at https://github.com/ContentAndMaterialPortrait/MAE-GEBD.

preprint2020arXiv

Magnetic field-induced quantum phase transitions in a van der Waals magnet

Exploring new parameter regimes to realize and control novel phases of matter has been a main theme in modern condensed matter physics research. The recent discovery of 2D magnetism in nearly freestanding monolayer atomic crystals has already led to observations of a number of novel magnetic phenomena absent in bulk counterparts. Such intricate interplays between magnetism and crystalline structures provide ample opportunities for exploring quantum phase transitions in this new 2D parameter regime. Here, using magnetic field and temperature dependent circularly polarized Raman spectroscopy of phonons and magnons, we map out the phase diagram of CrI3 that has been known to be a layered AFM in its 2D films and a FM in its 3D bulk. We, however, reveal a novel mixed state of layered AFM and FM in 3D CrI3 bulk crystals where the layered AFM survives in the surface layers and the FM appears in deeper bulk layers. We then show that the surface layered AFM transits into the FM at a critical magnetic field of 2 T, similar to what was found in the few layer case. Interestingly, concurrent with this magnetic phase transition, we discover a first-order structural phase transition that alters the crystallographic point group from C3i to C2h and thus, from a symmetry perspective, this monoclinic structural phase belongs to the 3D nematic order universality class. Our result not only unveils the complex single magnon behavior in 3D CrI3, but also settles down the puzzle of how CrI3 transits from a bulk FM to a thin layered AFM semiconductor, despite recent efforts in understanding the origin of layered AFM in CrI3 thin layer, and reveals the intimate relationship between the layered AFM-to-FM and the crystalline rhombohedral-to-monoclinic phase transitions. These findings further open up opportunities for future 2D magnet-based magneto-mechanical devices.

preprint2020arXiv

Observation of the polaronic character of excitons in a two-dimensional semiconducting magnet $\mathrm{CrI_3}$

Exciton dynamics can be strongly affected by lattice vibrations through electron-phonon coupling. This is rarely explored in two-dimensional magnetic semiconductors. Focusing on bilayer CrI3, we first show the presence of strong electron-phonon coupling through temperature-dependent photoluminescence and absorption spectroscopy. We then report the observation of periodic broad modes up to the 8th order in Raman spectra, attributed to the polaronic character of excitons. We establish that this polaronic character is dominated by the coupling between the charge-transfer exciton at 1.96 eV and a longitudinal optical phonon at 120.6 cm-1. We further show that the emergence of long-range magnetic order enhances the electron-phonon coupling strength by about 50$\%$ and that the transition from layered antiferromagnetic to ferromagnetic order tunes the spectral intensity of the periodic broad modes, suggesting a strong coupling among the lattice, charge and spin in two-dimensional CrI3. Our study opens opportunities for tailoring light-matter interactions in two-dimensional magnetic semiconductors.

preprint2016arXiv

Distinct surface and bulk charge density waves in ultrathin 1T-TaS2

We employ low-frequency Raman spectroscopy to study the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition in 1T-TaS2 ultrathin flakes protected from oxidation. We identify new modes originating from C phase CDW phonons that are distinct from those seen in bulk 1T-TaS2. We attribute these to CDW modes from the surface layers. By monitoring individual modes with temperature, we find that surfaces undergo a separate, low-hysteresis NC-C phase transition that is decoupled from the transition in the bulk layers. This indicates the activation of a secondary phase nucleation process in the limit of weak interlayer interaction, which can be understood from energy considerations.

preprint2016arXiv

Interlayer breathing and shear modes in NbSe2 atomic layers

Atomically thin NbSe2 is a metallic layered transition metal dichalcogenide (TMD) with considerably different crystallographic structure and electronic properties from other TMDs, such as MoS2, MoSe2, WS2 and WSe2. Properties of TMD atomic layers are sensitive to interlayer coupling. Here we investigate the interlayer phonons of few-layer NbSe2 by ultralow-frequency Raman spectroscopy. We observe both the interlayer breathing modes and shear modes at frequencies below 40 cm-1 for samples of 2 to 15 layers. Their frequency, Raman activity, and environmental instability depend systematically on the layer number. We account for these results utilizing a combination of the linear-chain model, group-theory analysis and first-principles calculations. Although NbSe2 possesses different stacking order from MoS2, MoSe2, WS2 and WSe2, it exhibits the same symmetry and Raman selection rules, as well as similar interlayer coupling strength and thickness dependence of interlayer phonon modes.

preprint2016arXiv

Room Temperature Formation of Carbon Onions via Ultrasonic Agitation of MoS2 in Isopropanol

Ultrasonic agitation is a proven method for breaking down layered materials such as MoS2 into single or few layer nanoparticles. In this experiment, MoS2 powder is sonicated in isopropanol for an extended period of time in an attempt to create particles of the smallest possible size. As expected, the process yielded a significant quantity of nanoscale MoS2 in the form of finite layer sheets with lateral dimensions as small as a few tens of nanometers. Although no evidence was found to indicate a larger the longer sonication times resulted in a significant increase in yield of single layer MoS2, the increased sonication did result in the formation of several types of carbon allotropes in addition to the sheets of MoS2. These carbon structures appear to originate from the breakdown of the isopropanol and consist of finite layer graphite platelets as well as a large number of multi-walled fullerenes, also known as carbon onions. Both the finite layer graphite and MoS2 nanoplatelets were both found to be heavily decorated with carbon onions. However, isolated clusters of carbon onions could also be found. Our results show that liquid exfoliation of MoS2 is not only useful for forming finite layer MoS2, but also creating carbon onions at room temperature as well.

preprint2015arXiv

Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy

We investigate the ultralow-frequency Raman response of atomically thin ReS2, a special type of two-dimensional (2D) semiconductors with unique distorted 1T structure. Bilayer and few-layer ReS2 exhibit rich Raman spectra at frequencies below 50 cm-1, where a panoply of interlayer shear and breathing modes are observed. The emergence of these interlayer phonon modes indicate that the ReS2 layers are coupled and stacked orderly, in contrast to the general belief that the ReS2 layers are decoupled from one another. While the interlayer breathing modes can be described by a linear chain model as in other 2D layered crystals, the shear modes exhibit distinctive behavior due to the in-plane lattice distortion. In particular, the two shear modes in bilayer ReS2 are non-degenerate and well separated in the Raman spectrum, in contrast to the doubly degenerate shear modes in other 2D materials. By carrying out comprehensive first-principles calculations, we can account for the frequency and Raman intensity of the interlayer modes, and determine the stacking order in bilayer ReS2.

preprint2014arXiv

Observation of interlayer phonon modes in van der Waals heterostructures

We have investigated the vibrational properties of van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs), specifically MoS2/WSe2 and MoSe2/MoS2 heterobilayers as well as twisted MoS2 bilayers, by means of ultralow-frequency Raman spectroscopy. We discovered Raman features (at 30 ~ 40 cm-1) that arise from the layer-breathing mode (LBM) vibrations between the two incommensurate TMD monolayers in these structures. The LBM Raman intensity correlates strongly with the suppression of photoluminescence that arises from interlayer charge transfer. The LBM is generated only in bilayer areas with direct layer-layer contact and atomically clean interface. Its frequency also evolves systematically with the relative orientation between of the two layers. Our research demonstrates that LBM can serve as a sensitive probe to the interface environment and interlayer interactions in van der Waals materials.

preprint2014arXiv

Stacking-dependent shear modes in trilayer graphene

We observed distinct interlayer shear mode Raman spectra for trilayer graphene with ABA and ABC stacking order. There are two rigid-plane shear-mode phonon branches in trilayer graphene. We found that ABA trilayers exhibit pronounced Raman response from the high-frequency shear branch, without any noticeable response from the low-frequency branch. In contrast, ABC trilayers exhibit no response from the high-frequency shear branch, but significant Raman response from the low-frequency branch. Such complementary behaviors of Raman shear modes can be explained by the distinct symmetry of the two trilayer allotropes. The strong stacking-order dependence was not found in the layer-breathing modes, and thus represents a unique characteristic of the shear modes.

preprint2014arXiv

Temperature-activated layer-breathing vibrations in few-layer graphene

We investigated the low-frequency Raman spectra of freestanding few-layer graphene (FLG) at varying temperatures (400 - 900 K) controlled by laser heating. At high temperature, we observed the fundamental Raman mode for the lowest-frequency branch of rigid-plane layer-breathing mode (LBM) vibration. The mode frequency redshifts dramatically from 81 cm-1 for bilayer to 23 cm-1 for 8-layer. The thickness dependence is well described by a simple model of coupled oscillators. Notably, the LBM Raman response is unobservable at room temperature, and it is turned on at higher temperature (>600 K) with a steep increase of Raman intensity. The observation suggests that the LBM vibration is strongly suppressed by molecules adsorbed on the graphene surface, but is activated as desorption occurs at high temperature.

preprint2013arXiv

Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to isolate the more interesting surface transport characteristics. Here, we report the synthesis and characterization of nanosheets of topological insulator Bi2Se3 with variable Sb-doping level to control the electron carrier density and surface transport behavior. (Bi1-xSbx)2Se3 thin films of thickness less than 10 nm are prepared by epitaxial growth on mica substrates in a vapor transport setup. The introduction of Sb in Bi2Se3 effectively suppresses the room temperature electron density from ~4 \times 10^13/cm^2 in pure Bi2Se3 (x = 0) to ~2 \times 10^12/cm^2 in (Bi1-xSbx)2Se3 at x ~0.15, while maintaining the metallic transport behavior. At x > ~0.20, a metal-insulator transition (MIT) is observed indicating that the system has transformed into an insulator in which the metallic surface conduction is blocked. In agreement with the observed MIT, Raman spectroscopy reveals the emergence of vibrational modes arising from Sb-Sb and Sb-Se bonds at high Sb concentrations, confirming the appearance of Sb2Se3 crystal structure in the sample. These results suggest that nanostructured chalcogenide films with controlled doping can be a tunable platform for fundamental studies and electronic applications of topological insulator systems.

preprint2013arXiv

Observation of Low Energy Raman Modes in Twisted Bilayer Graphene

Two new Raman modes below 100 cm^-1 are observed in twisted bilayer graphene grown by chemical vapor deposition. The two modes are observed in a small range of twisting angle at which the intensity of the G Raman peak is strongly enhanced, indicating that these low energy modes and the G Raman mode share the same resonance enhancement mechanism, as a function of twisting angle. The 94 cm^-1 mode (measured with a 532 nm laser excitation) is assigned to the fundamental layer breathing vibration (ZO (prime) mode) mediated by the twisted bilayer graphene lattice, which lacks long-range translational symmetry. The dependence of this modes frequency and linewidth on the rotational angle can be explained by the double resonance Raman process which is different from the previously-identified Raman processes activated by twisted bilayer graphene superlattice. The dependence also reveals the strong impact of electronic-band overlaps of the two graphene layers. Another new mode at 52 cm^-1, not observed previously in the bilayer graphene system, is tentatively attributed to a torsion mode in which the bottom and top graphene layers rotate out-of-phase in the plane.

preprint2012arXiv

Molecular beam growth of graphene nanocrystals on dielectric substrates

We demonstrate the growth of graphene nanocrystals by molecular beam methods that employ a solid carbon source, and that can be used on a diverse class of large area dielectric substrates. Characterization by Raman and Near Edge X-ray Absorption Fine Structure spectroscopies reveal a sp2 hybridized hexagonal carbon lattice in the nanocrystals. Lower growth rates favor the formation of higher quality, larger size multi-layer graphene crystallites on all investigated substrates. The surface morphology is determined by the roughness of the underlying substrate and graphitic monolayer steps are observed by ambient scanning tunneling microscopy.

preprint2011arXiv

Visualizing Individual Nitrogen Dopants in Monolayer Graphene

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy (STM), Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.