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Zhipeng Ye

Zhipeng Ye appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

8 published item(s)

preprint2020arXiv

Magnetic field-induced quantum phase transitions in a van der Waals magnet

Exploring new parameter regimes to realize and control novel phases of matter has been a main theme in modern condensed matter physics research. The recent discovery of 2D magnetism in nearly freestanding monolayer atomic crystals has already led to observations of a number of novel magnetic phenomena absent in bulk counterparts. Such intricate interplays between magnetism and crystalline structures provide ample opportunities for exploring quantum phase transitions in this new 2D parameter regime. Here, using magnetic field and temperature dependent circularly polarized Raman spectroscopy of phonons and magnons, we map out the phase diagram of CrI3 that has been known to be a layered AFM in its 2D films and a FM in its 3D bulk. We, however, reveal a novel mixed state of layered AFM and FM in 3D CrI3 bulk crystals where the layered AFM survives in the surface layers and the FM appears in deeper bulk layers. We then show that the surface layered AFM transits into the FM at a critical magnetic field of 2 T, similar to what was found in the few layer case. Interestingly, concurrent with this magnetic phase transition, we discover a first-order structural phase transition that alters the crystallographic point group from C3i to C2h and thus, from a symmetry perspective, this monoclinic structural phase belongs to the 3D nematic order universality class. Our result not only unveils the complex single magnon behavior in 3D CrI3, but also settles down the puzzle of how CrI3 transits from a bulk FM to a thin layered AFM semiconductor, despite recent efforts in understanding the origin of layered AFM in CrI3 thin layer, and reveals the intimate relationship between the layered AFM-to-FM and the crystalline rhombohedral-to-monoclinic phase transitions. These findings further open up opportunities for future 2D magnet-based magneto-mechanical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of the polaronic character of excitons in a two-dimensional semiconducting magnet $\mathrm{CrI_3}$

Exciton dynamics can be strongly affected by lattice vibrations through electron-phonon coupling. This is rarely explored in two-dimensional magnetic semiconductors. Focusing on bilayer CrI3, we first show the presence of strong electron-phonon coupling through temperature-dependent photoluminescence and absorption spectroscopy. We then report the observation of periodic broad modes up to the 8th order in Raman spectra, attributed to the polaronic character of excitons. We establish that this polaronic character is dominated by the coupling between the charge-transfer exciton at 1.96 eV and a longitudinal optical phonon at 120.6 cm-1. We further show that the emergence of long-range magnetic order enhances the electron-phonon coupling strength by about 50$\%$ and that the transition from layered antiferromagnetic to ferromagnetic order tunes the spectral intensity of the periodic broad modes, suggesting a strong coupling among the lattice, charge and spin in two-dimensional CrI3. Our study opens opportunities for tailoring light-matter interactions in two-dimensional magnetic semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Distinct surface and bulk charge density waves in ultrathin 1T-TaS2

We employ low-frequency Raman spectroscopy to study the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition in 1T-TaS2 ultrathin flakes protected from oxidation. We identify new modes originating from C phase CDW phonons that are distinct from those seen in bulk 1T-TaS2. We attribute these to CDW modes from the surface layers. By monitoring individual modes with temperature, we find that surfaces undergo a separate, low-hysteresis NC-C phase transition that is decoupled from the transition in the bulk layers. This indicates the activation of a secondary phase nucleation process in the limit of weak interlayer interaction, which can be understood from energy considerations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Interlayer breathing and shear modes in NbSe2 atomic layers

Atomically thin NbSe2 is a metallic layered transition metal dichalcogenide (TMD) with considerably different crystallographic structure and electronic properties from other TMDs, such as MoS2, MoSe2, WS2 and WSe2. Properties of TMD atomic layers are sensitive to interlayer coupling. Here we investigate the interlayer phonons of few-layer NbSe2 by ultralow-frequency Raman spectroscopy. We observe both the interlayer breathing modes and shear modes at frequencies below 40 cm-1 for samples of 2 to 15 layers. Their frequency, Raman activity, and environmental instability depend systematically on the layer number. We account for these results utilizing a combination of the linear-chain model, group-theory analysis and first-principles calculations. Although NbSe2 possesses different stacking order from MoS2, MoSe2, WS2 and WSe2, it exhibits the same symmetry and Raman selection rules, as well as similar interlayer coupling strength and thickness dependence of interlayer phonon modes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy

We investigate the ultralow-frequency Raman response of atomically thin ReS2, a special type of two-dimensional (2D) semiconductors with unique distorted 1T structure. Bilayer and few-layer ReS2 exhibit rich Raman spectra at frequencies below 50 cm-1, where a panoply of interlayer shear and breathing modes are observed. The emergence of these interlayer phonon modes indicate that the ReS2 layers are coupled and stacked orderly, in contrast to the general belief that the ReS2 layers are decoupled from one another. While the interlayer breathing modes can be described by a linear chain model as in other 2D layered crystals, the shear modes exhibit distinctive behavior due to the in-plane lattice distortion. In particular, the two shear modes in bilayer ReS2 are non-degenerate and well separated in the Raman spectrum, in contrast to the doubly degenerate shear modes in other 2D materials. By carrying out comprehensive first-principles calculations, we can account for the frequency and Raman intensity of the interlayer modes, and determine the stacking order in bilayer ReS2.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of interlayer phonon modes in van der Waals heterostructures

We have investigated the vibrational properties of van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs), specifically MoS2/WSe2 and MoSe2/MoS2 heterobilayers as well as twisted MoS2 bilayers, by means of ultralow-frequency Raman spectroscopy. We discovered Raman features (at 30 ~ 40 cm-1) that arise from the layer-breathing mode (LBM) vibrations between the two incommensurate TMD monolayers in these structures. The LBM Raman intensity correlates strongly with the suppression of photoluminescence that arises from interlayer charge transfer. The LBM is generated only in bilayer areas with direct layer-layer contact and atomically clean interface. Its frequency also evolves systematically with the relative orientation between of the two layers. Our research demonstrates that LBM can serve as a sensitive probe to the interface environment and interlayer interactions in van der Waals materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Stacking-dependent shear modes in trilayer graphene

We observed distinct interlayer shear mode Raman spectra for trilayer graphene with ABA and ABC stacking order. There are two rigid-plane shear-mode phonon branches in trilayer graphene. We found that ABA trilayers exhibit pronounced Raman response from the high-frequency shear branch, without any noticeable response from the low-frequency branch. In contrast, ABC trilayers exhibit no response from the high-frequency shear branch, but significant Raman response from the low-frequency branch. Such complementary behaviors of Raman shear modes can be explained by the distinct symmetry of the two trilayer allotropes. The strong stacking-order dependence was not found in the layer-breathing modes, and thus represents a unique characteristic of the shear modes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Temperature-activated layer-breathing vibrations in few-layer graphene

We investigated the low-frequency Raman spectra of freestanding few-layer graphene (FLG) at varying temperatures (400 - 900 K) controlled by laser heating. At high temperature, we observed the fundamental Raman mode for the lowest-frequency branch of rigid-plane layer-breathing mode (LBM) vibration. The mode frequency redshifts dramatically from 81 cm-1 for bilayer to 23 cm-1 for 8-layer. The thickness dependence is well described by a simple model of coupled oscillators. Notably, the LBM Raman response is unobservable at room temperature, and it is turned on at higher temperature (>600 K) with a steep increase of Raman intensity. The observation suggests that the LBM vibration is strongly suppressed by molecules adsorbed on the graphene surface, but is activated as desorption occurs at high temperature.

0 citations0 reviewsNo code linkedOpen access