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Researcher profile

Roman Gorbachev

Roman Gorbachev contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.ins-det

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Published work

5 published item(s)

preprint2026arXiv

Noise2Void for Denoising Atomic Resolution Scanning Transmission Electron Microscopy Images

The Noise2Void technique is demonstrated for successful denoising of atomic-resolution scanning transmission electron microscopy (STEM) images. The technique is applied to denoising atomic resolution images and videos of gold adatoms on a graphene surface within a graphene liquid cell, with the denoised experimental data qualitatively demonstrating improved visibility of both the Au adatoms and the graphene lattice. The denoising performance is quantified by comparison to similar simulated data and the approach is found to significantly outperform both total variation and simple Gaussian blurring. Compared to other denoising methods, the Noise2Void technique has the combined advantages that it requires no manual intervention during training or denoising, no prior knowledge of the sample and is compatible with real time data acquisition rates of at least 45 frames per second.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tracking single atoms in a liquid environment

The chemical behaviour of single metal atoms largely depends on the local coordination environment, including interactions with the substrate and with the surrounding gas or liquid. However, the key instrumentation for studying such systems at the atomic scale generally requires high vacuum conditions, limiting the degree to which the aforementioned environmental parameters can be investigated. Here we develop a new platform for transmission electron microscopy investigation of single metal atoms in liquids and study the dynamic behaviour of individual platinum atoms on the surface of a single layer MoS2 crystal in water. To achieve the record single atom resolution, we introduce a double liquid cell based on a 2D material heterostructure, which allows us to submerge an atomically thin membrane with liquid on both sides while maintaining the total specimen thickness of only ~ 70 nm. By comparison with an identical specimen imaged under high vacuum conditions, we reveal drastic differences in the single atom resting sites and atomic hopping behaviour, demonstrating that in situ imaging conditions are essential to gain complete understanding of the chemical activity of individual atoms. These findings pave the way for in situ liquid imaging of chemical processes with single atom precision.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomic reconstruction in twisted bilayers of transition metal dichalcogenides

Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bilayers twisted to a small angle, $θ<3^{\circ}$, reconstructs into energetically favorable stacking domains separated by a network of stacking faults. For crystal alignments close to 3R stacking, a tessellated pattern of mirror reflected triangular 3R domains emerges, separated by a network of partial dislocations which persist to the smallest twist angles. Scanning tunneling measurements show that the electronic properties of those 3R domains appear qualitatively different from 2H TMDs, featuring layer-polarized conduction band states caused by lack of both inversion and mirror symmetry. In contrast, for alignments close to 2H stacking, stable 2H domains dominate, with nuclei of an earlier unnoticed metastable phase limited to $\sim$ 5nm in size. This appears as a kagome-like pattern at $θ\sim 1^{\circ}$, transitioning at $θ\rightarrow 0$ to a hexagonal array of screw dislocations separating large-area 2H domains.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Ultra-thin van der Waals crystals as semiconductor quantum wells

Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn&#39;t been explored in the case of 2D materials. Here we transfer this concept onto the van der Waals heterostructures which utilize few-layers films of InSe as quantum wells. The precise control over the energy of the subbands and their uniformity guarantees extremely high quality of the electronic transport in such systems. Using novel tunnelling and light emitting devices, for the first time we reveal the full subbands structure by studying resonance features in the tunnelling current, photoabsorption and light emission. In the future, these systems will allow development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer films of van der Waals materials.

0 citations0 reviewsNo code linkedOpen access