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Researcher profile

Sarah J. Haigh

Sarah J. Haigh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.ins-detphysics.comp-phphysics.app-phphysics.data-anphysics.space-ph

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Published work

11 published item(s)

preprint2026arXiv

Noise2Void for Denoising Atomic Resolution Scanning Transmission Electron Microscopy Images

The Noise2Void technique is demonstrated for successful denoising of atomic-resolution scanning transmission electron microscopy (STEM) images. The technique is applied to denoising atomic resolution images and videos of gold adatoms on a graphene surface within a graphene liquid cell, with the denoised experimental data qualitatively demonstrating improved visibility of both the Au adatoms and the graphene lattice. The denoising performance is quantified by comparison to similar simulated data and the approach is found to significantly outperform both total variation and simple Gaussian blurring. Compared to other denoising methods, the Noise2Void technique has the combined advantages that it requires no manual intervention during training or denoising, no prior knowledge of the sample and is compatible with real time data acquisition rates of at least 45 frames per second.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tracking single atoms in a liquid environment

The chemical behaviour of single metal atoms largely depends on the local coordination environment, including interactions with the substrate and with the surrounding gas or liquid. However, the key instrumentation for studying such systems at the atomic scale generally requires high vacuum conditions, limiting the degree to which the aforementioned environmental parameters can be investigated. Here we develop a new platform for transmission electron microscopy investigation of single metal atoms in liquids and study the dynamic behaviour of individual platinum atoms on the surface of a single layer MoS2 crystal in water. To achieve the record single atom resolution, we introduce a double liquid cell based on a 2D material heterostructure, which allows us to submerge an atomically thin membrane with liquid on both sides while maintaining the total specimen thickness of only ~ 70 nm. By comparison with an identical specimen imaged under high vacuum conditions, we reveal drastic differences in the single atom resting sites and atomic hopping behaviour, demonstrating that in situ imaging conditions are essential to gain complete understanding of the chemical activity of individual atoms. These findings pave the way for in situ liquid imaging of chemical processes with single atom precision.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Review of Gas-Surface Interaction Models for Orbital Aerodynamics Applications

Renewed interest in Very Low Earth Orbits (VLEO) - i.e. altitudes below 450 km - has led to an increased demand for accurate environment characterisation and aerodynamic force prediction. While the former requires knowledge of the mechanisms that drive density variations in the thermosphere, the latter also depends on the interactions between the gas-particles in the residual atmosphere and the surfaces exposed to the flow. The determination of the aerodynamic coefficients is hindered by the numerous uncertainties that characterise the physical processes occurring at the exposed surfaces. Several models have been produced over the last 60 years with the intent of combining accuracy with relatively simple implementations. In this paper the most popular models have been selected and reviewed using as discriminating factors relevance with regards to orbital aerodynamics applications and theoretical agreement with gas-beam experimental data. More sophisticated models were neglected, since their increased accuracy is generally accompanied by a substantial increase in computation times which is likely to be unsuitable for most space engineering applications. For the sake of clarity, a distinction was introduced between physical and scattering kernel theory based gas-surface interaction models. The physical model category comprises the Hard Cube model, the Soft Cube model and the Washboard model, while the scattering kernel family consists of the Maxwell model, the Nocilla-Hurlbut-Sherman model and the Cercignani-Lampis-Lord model. Limits and assets of each model have been discussed with regards to the context of this paper. Wherever possible, comments have been provided to help the reader to identify possible future challenges for gas-surface interaction science with regards to orbital aerodynamic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomic reconstruction in twisted bilayers of transition metal dichalcogenides

Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bilayers twisted to a small angle, $θ<3^{\circ}$, reconstructs into energetically favorable stacking domains separated by a network of stacking faults. For crystal alignments close to 3R stacking, a tessellated pattern of mirror reflected triangular 3R domains emerges, separated by a network of partial dislocations which persist to the smallest twist angles. Scanning tunneling measurements show that the electronic properties of those 3R domains appear qualitatively different from 2H TMDs, featuring layer-polarized conduction band states caused by lack of both inversion and mirror symmetry. In contrast, for alignments close to 2H stacking, stable 2H domains dominate, with nuclei of an earlier unnoticed metastable phase limited to $\sim$ 5nm in size. This appears as a kagome-like pattern at $θ\sim 1^{\circ}$, transitioning at $θ\rightarrow 0$ to a hexagonal array of screw dislocations separating large-area 2H domains.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Convergent beam electron diffraction of multilayer van der Waals structures

Convergent beam electron diffraction is routinely applied for studying deformation and local strain in thick crystals by matching the crystal structure to the observed intensity distributions. Recently, it has been demonstrated that CBED can be applied for imaging two-dimensional (2D) crystals where a direct reconstruction is possible and three-dimensional crystal deformations at a nanometre resolution can be retrieved. Here, we demonstrate that second-order effects allow for further information to be obtained regarding stacking arrangements between the crystals. Such effects are especially pronounced in samples consisting of multiple layers of 2D crystals. We show, using simulations and experiments, that twisted multilayer samples exhibit extra modulations of interference fringes in CBED patterns, i. e., a CBED moiré. A simple and robust method for the evaluation of the composition and the number of layers from a single-shot CBED pattern is demonstrated.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Holographic reconstruction of the interlayer distance of bilayer two-dimensional crystal samples from their convergent beam electron diffraction patterns

The convergent beam electron diffraction (CBED) patterns of twisted bilayer samples exhibit interference patterns in their CBED spots. Such interference patterns can be treated as off-axis holograms and the phase of the scattered waves, meaning the interlayer distance can be reconstructed. A detailed protocol of the reconstruction procedure is provided in this study. In addition, we derive an exact formula for reconstructing the interlayer distance from the recovered phase distribution, which takes into account the different chemical compositions of the individual monolayers. It is shown that one interference fringe in a CBED spot is sufficient to reconstruct the distance between the layers, which can be practical for imaging samples with a relatively small twist angle or when probing small sample regions. The quality of the reconstructed interlayer distance is studied as a function of the twist angle. At smaller twist angles, the reconstructed interlayer distance distribution is more precise and artefact free. At larger twist angles, artefacts due to the moiré structure appear in the reconstruction. A method for the reconstruction of the average interlayer distance is presented. As for resolution, the interlayer distance can be reconstructed by the holographic approach at an accuracy of 0.5 A, which is a few hundred times better than the intrinsic z-resolution of diffraction limited resolution, as expressed through the spread of the measured k-values. Moreover, we show that holographic CBED imaging can detect variations as small as 0.1 A in the interlayer distance, though the quantitative reconstruction of such variations suffers from large errors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7Sr0.3MnO3 on a single crystal substrate of well lattice matched SrTiO3 via a film of SrRuO3 that we subsequently dissolved, permitting the transfer of unstrained La0.7Sr0.3MnO3 to a ferroelectric substrate of 0.68Pb(Mg1/3Nb2/3)O3 0.32PbTiO3 in a different crystallographic orientation. Ferroelectric domain switching, and a concomitant ferroelectric phase transition, produced large non volatile changes of magnetization that were mediated by magnetic domain rotations at locations defined by the microstructure - as revealed via high resolution vector maps of magnetization constructed from photoemission electron microscopy data, with contrast from x-ray magnetic circular dichroism. In future, our method may be exploited to control functional properties in dislocation free epitaxial films of any composition.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Raman Fingerprints of Graphene Produced by Anodic Electrochemical Exfoliation

Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and different types of solvents in varying amounts. We demonstrate that no information on the thickness can be extracted from the shape of the 2D peak as this type of graphene is defective. Furthermore, the number of defects and the uniformity of the samples strongly depend on the experimental conditions, including post-processing. Under specific conditions, formation of short conductive trans-polyacetylene chains has been observed. Our Raman analysis provides guidance for the community on how to get information on defects coming from electrolyte, temperature and other experimental conditions, by making Raman spectroscopy a powerful metrology tool.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Optimized conditions for direct imaging of bonding charge density in electron microscopy

We report on the observability of valence bonding effects in aberration-corrected high resolution electron microscopy (HREM) images along the [010] projection of the mineral Forsterite(Mg2SiO4). We have also performed exit wave restorations using simulated noisy images and have determined that both the intensities of individual images and the modulus of the restored complex exit wave are most sensitive to bonding effects at a level of 25% for moderately thick samples of 20-25 nm. This relatively large thickness is due to dynamical amplification of bonding contrast arising from partial de-channeling of 1s states.

0 citations0 reviewsNo code linkedOpen access