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Vladimir I. Fal'ko

Vladimir I. Fal'ko appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-matcond-mat.dis-nncond-mat.stat-mechcond-mat.supr-conphysics.optics

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Published work

46 published item(s)

preprint2022arXiv

Band Gap Opening in Bilayer Graphene-CrCl$_3$/CrBr$_3$/CrI$_3$ van der Waals Interfaces

We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess of $10^{13}$ cm$^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the $σ$ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl$_3$ and BLG/CrBr$_3$ the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX$_3$ conduction band are correlated.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Light sources with bias tunable spectrum based on van der Waals interface transistors

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures

In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

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preprint2021arXiv

Spin-valley collective modes of the electron liquid in graphene

We develop the theory of collective modes supported by a Fermi liquid of electrons in pristine graphene. Under reasonable assumptions regarding the electron-electron interaction, all the modes but the plasmon are over-damped. In addition to the $SU(2)$ symmetric spin mode, these include also the valley imbalance modes obeying a $U(1)$ symmetry, and a $U(2)$ symmetric valley spin imbalance mode. We derive the interactions and diffusion constants characterizing the over-damped modes. The corresponding relaxation rates set fundamental constraints on graphene valley- and spintronics applications.

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preprint2020arXiv

Atomic reconstruction in twisted bilayers of transition metal dichalcogenides

Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bilayers twisted to a small angle, $θ<3^{\circ}$, reconstructs into energetically favorable stacking domains separated by a network of stacking faults. For crystal alignments close to 3R stacking, a tessellated pattern of mirror reflected triangular 3R domains emerges, separated by a network of partial dislocations which persist to the smallest twist angles. Scanning tunneling measurements show that the electronic properties of those 3R domains appear qualitatively different from 2H TMDs, featuring layer-polarized conduction band states caused by lack of both inversion and mirror symmetry. In contrast, for alignments close to 2H stacking, stable 2H domains dominate, with nuclei of an earlier unnoticed metastable phase limited to $\sim$ 5nm in size. This appears as a kagome-like pattern at $θ\sim 1^{\circ}$, transitioning at $θ\rightarrow 0$ to a hexagonal array of screw dislocations separating large-area 2H domains.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Broken mirror symmetry in excitonic response of reconstructed domains in twisted MoSe$_2$/MoSe$_2$ bilayers

Structural engineering of van der Waals heterostructures via stacking and twisting has recently been used to create moiré superlattices, enabling the realization of new optical and electronic properties in solid-state systems. In particular, moiré lattices in twisted bilayers of transition metal dichalcogenides (TMDs) have been shown to lead to exciton trapping, host Mott insulating and superconducting states, and act as unique Hubbard systems whose correlated electronic states can be detected and manipulated optically. Structurally, these twisted heterostructures also feature atomic reconstruction and domain formation. Unfortunately, due to the nanoscale sizes (~10 nm) of typical moiré domains, the effects of atomic reconstruction on the electronic and excitonic properties of these heterostructures could not be investigated systematically and have often been ignored. Here, we use near-0$^o$ twist angle MoSe$_2$/MoSe$_2$ bilayers with large rhombohedral AB/BA domains to directly probe excitonic properties of individual domains with far-field optics. We show that this system features broken mirror/inversion symmetry, with the AB and BA domains supporting interlayer excitons with out-of-plane (z) electric dipole moments in opposite directions. The dipole orientation of ground-state $Γ$-K interlayer excitons (X$_{I,1}$) can be flipped with electric fields, while higher-energy K-K interlayer excitons (X$_{I,2}$) undergo field-asymmetric hybridization with intralayer K-K excitons (X$_0$). Our study reveals the profound impacts of crystal symmetry on TMD excitons and points to new avenues for realizing topologically nontrivial systems, exotic metasurfaces, collective excitonic phases, and quantum emitter arrays via domain-pattern engineering.

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preprint2020arXiv

Crossover from weakly indirect to direct excitons in atomically thin films of InSe

We perform a $\mathbf{k \cdot p}$ theory analysis of the spectra of the lowest energy and excited states of the excitons in few-layer atomically thin films of InSe taking into account in-plane electric polarizability of the film and the influence of the encapsulation environment. For the thinner films, the lowest-energy state of the exciton is weakly indirect in momentum space, with its dispersion showing minima at a layer-number-dependent wave number, due to an inverted edge of a relatively flat topmost valence band branch of the InSe film spectrum and we compute the activation energy from the momentum dark exciton ground state into the bright state. For the films with more than seven In$_2$Se$_2$ layers, the exciton dispersion minimum shifts to $Γ$-point.

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preprint2020arXiv

Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics

Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stems from the possibility to tailor the spectral response over a broad range by exploiting interlayer transitions between different compounds with an appropriate band-edge alignment. For the interlayer transitions to be radiative, however, a serious challenge comes from details of the materials --such as lattice mismatch or even a small misalignment of the constituent layers-- that can drastically suppress the electron-photon coupling. The problem was evidenced in recent studies of heterostructures of monolayer transition metal dichalcogenides, whose band edges are located at the K-point of reciprocal space. Here we demonstrate experimentally that the solution to the interlayer coupling problem is to engineer type-II interfaces by assembling atomically thin crystals that have the bottom of the conduction band and the top of the valence band at the $Γ$-point, thus avoiding any momentum mismatch. We find that this type of vdW interfaces exhibits radiative optical transition irrespective of lattice constant, rotational/translational alignment of the two layers, or whether the constituent materials are direct or indirect gap semiconductors. The result, which is robust and of general validity, drastically broadens the scope of future optoelectronics device applications based on 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering

Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe$_2$/WSe$_2$ heterostructures, strong hybridization occurs between the holes in the spin-split valence band of WSe$_2$ and in the top valence band of MoSe$_2$, especially when both are bound to the same electron in the lowest conduction band of WSe$_2$. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe$_2$/WSe$_2$ structures, by observing scattering of specific excitons by phonons in both WSe$_2$ and MoSe$_2$. We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene

Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hybridized flat bands. Extending this approach to the case of twisted multilayer graphene would allow even higher control over the band structure because of the reduced symmetry of the system. Here, we study electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure). We observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions, including superconducting states. We provide basic theoretical interpretation of the observed electronic structure.

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preprint2019arXiv

Electronic phase separation in topological surface states of rhombohedral graphite

Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG films up to 50 graphene layers thick and study their transport properties. We find that the bulk electronic states in such RG are gapped and, at low temperatures, electron transport is dominated by surface states. Because of topological protection, the surface states are robust and of high quality, allowing the observation of the quantum Hall effect, where RG exhibits phase transitions between gapless semimetallic phase and gapped quantum spin Hall phase with giant Berry curvature. An energy gap can also be opened in the surface states by breaking their inversion symmetry via applying a perpendicular electric field. Moreover, in RG films thinner than 4 nm, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly-correlated electronic surface states.

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preprint2019arXiv

Ultra-thin van der Waals crystals as semiconductor quantum wells

Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. Most of those devices rely on the meticulous engineering of the size quantization of electrons in quantum wells. This avenue, however, hasn't been explored in the case of 2D materials. Here we transfer this concept onto the van der Waals heterostructures which utilize few-layers films of InSe as quantum wells. The precise control over the energy of the subbands and their uniformity guarantees extremely high quality of the electronic transport in such systems. Using novel tunnelling and light emitting devices, for the first time we reveal the full subbands structure by studying resonance features in the tunnelling current, photoabsorption and light emission. In the future, these systems will allow development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer films of van der Waals materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Auger recombination of dark excitons in ${\rm WS_2}$ and ${\rm WSe_2}$ monolayers

We propose a novel phonon assisted Auger process unique to the electronic band structure of monolayer transition metal dichalcogenides (TMDCs), which dominates the radiative recombination of ground state excitons in Tungsten based TMDCs. Using experimental and DFT computed values for the exciton energies, spin-orbit splittings, optical matrix element, and the Auger matrix elements, we find that the Auger process begins to dominate at carrier densities as low as $10^{9-10}~{\rm cm^{-2}}$, thus providing a plausible explanation for the low quantum efficiencies reported for these materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ballistic miniband conduction in a graphene superlattice

Rational design of artificial lattices yields effects unavailable in simple solids, and vertical superlattices of multilayer semiconductors are already used in optical sensors and emitters. Manufacturing lateral superlattices remains a much bigger challenge, with new opportunities offered by the use of moire patterns in van der Waals heterostructures of graphene and hexagonal crystals such as boron nitride (h-BN). Experiments to date have elucidated the novel electronic structure of highly aligned graphene/h-BN heterostructures, where miniband edges and saddle points in the electronic dispersion can be reached by electrostatic gating. Here we investigate the dynamics of electrons in moire minibands by transverse electron focusing, a measurement of ballistic transport between adjacent local contacts in a magnetic field. At low temperatures, we observe caustics of skipping orbits extending over hundreds of superlattice periods, reversals of the cyclotron revolution for successive minibands, and breakdown of cyclotron motion near van Hove singularities. At high temperatures, we study the suppression of electron focusing by inelastic scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Edge effects in the magnetic interference pattern of a ballistic SNS junction

We investigate the Josephson critical current $I_c(Φ)$ of a wide superconductor-normal metal-superconductor (SNS) junction as a function of the magnetic flux $Φ$ threading it. Electronic trajectories reflected from the side edges alter the function $I_c(Φ)$ as compared to the conventional Fraunhofer-type dependence. At weak magnetic fields, $B\lesssim Φ_0/d^2$, the edge effect lifts zeros in $I_c(Φ)$ and gradually shifts the minima of that function toward half-integer multiples of the flux quantum. At $B>Φ_0/d^2$, the edge effect leads to an accelerated decay of the critical current $I_c(Φ)$ with increasing $Φ$. At larger fields, eventually, the system is expected to cross into a regime of "classical" mesoscopic fluctuations that is specific for wide ballistic SNS junctions with rough edges.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Influence of spin dynamics of defects on weak localization in paramagnetic 2D metals

Spin-flip scattering of charge carriers in metals with magnetic defects leads to the low-temperature saturation of the decoherence time, $τ_φ$, of electrons at the value comparable to their spin relaxation time, $τ_s$. In two-dimensional (2D) conductors such a saturation can be lifted by an in-plane magnetic field, $B_\parallel$, which polarizes spins of scatterers without affecting orbital motion of free carriers. Here, we show that in 2D conductors with substantially different values of the g-factors of electrons ($g_e$) and magnetic defects ($g_i$), the decoherence time $τ_φ(B_\parallel)$ (reflected by the curvature of magnetoconductance) displays an anomaly: it first gets shorter, decaying on the scale $B_\parallel\sim \hbar/|g_i-g_e|μ_B τ_s$, before becoming longer at higher values of $B_\parallel$.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Magnetic ratchet effect in bilayer graphene

We consider the orbital effect of an in-plane magnetic field on electrons in bilayer graphene, deriving linear-in-field contributions to the low-energy Hamiltonian arising from the presence of either skew interlayer coupling or interlayer potential asymmetry, the latter being tunable by an external metallic gate. To illustrate the relevance of such terms, we consider the ratchet effect in which a dc current results from the application of an alternating electric field in the presence of an in-plane magnetic field and inversion-symmetry breaking. By comparison with recent experimental observations in monolayer graphene [C. Drexler et al., Nature Nanotech. 8, 104 (2013)], we estimate that the effect in bilayer graphene can be two orders of magnitude greater than that in monolayer, illustrating that the bilayer is an ideal material for the realization of optoelectronic effects that rely on inversion-symmetry breaking.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hierarchy of gaps and magnetic minibands in graphene in the presence of the Abrikosov vortex lattice

We determine the structure of band and gaps in graphene encapsulated in hexagonal boron nitride and subjected to magnetic field of Abrikosov lattice of vortices in the underlying superconducting film. The spectrum features one non-dispersive magnetic miniband at zero energy, separated by the largest gaps in the miniband spectrum from a pair of minibands resembling slightly broadened first Landau levels in graphene, suggesting the persistence of $ν= \pm 2$ quantum Hall effect states. Also, we identify occasional merging point of magnetic minibands which feature Dirac-type dispersion at the consecutive miniband edges.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Anomalous sequence of quantum Hall liquids revealing tunable Lifshitz transition in bilayer graphene

Fermi surface topology plays an important role in determining the electronic properties of metals. In bulk metals, the Fermi energy is not easily tunable at the energy scale needed for reaching conditions for the Lifshitz transition - a singular point in the band structure where the connectivity of the Fermi surface changes. Bilayer graphene is a unique system where both Fermi energy and the low-energy electron dispersion can be tuned using the interplay between trigonal warping and a band gap opened by a transverse electric field. Here, we drive the Lifshitz transition to experimentally controllable carrier densities by applying large transverse electric fields through a h-BN-encapsulated bilayer graphene structure, and detect it by measuring the degeneracies of Landau levels. These degeneracies are revealed by filling factor -3 and -6 quantum Hall effect states of holes at low magnetic fields reflecting the existence of three maxima on the top of the valence band dispersion. At high magnetic fields all integer quantum Hall states are observed, indicating that deeper in the valence band the constant energy contours are singly-connected. The fact that we observe ferromagnetic quantum Hall states at odd-integer filling factors testifies to the high quality of our sample, and this enables us to identify several phase transitions between correlated quantum Hall states at intermediate magnetic fields, in agreement with the calculated evolution of the Landau level spectrum.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Charge-density-wave states in double-layer graphene structures in a high magnetic field

We study the phases of correlated charge-density waves that form at a high magnetic field in two parallel graphene flakes separated by a thin insulator. The predicted phases include the square and hexagonal charge-density-wave bubbles, and a quasi-one-dimensional stripe phase. We find that the transition temperature for such phases is within the experimentally accessible range and that formation of interlayer-correlated states produces a negative compressibility contribution to the differential capacitance of this system.

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preprint2014arXiv

Moire pattern as a magnifying glass for strain and dislocations in van der Waals heterostructures

We consider the role of deformations in graphene heterostructures with hexagonal crystals (including strain, wrinkles and dislocations) on the geometrical properties of moire patterns characteristic for a pair of two incommensurate misaligned isostructural crystals. By, employing a phenomenological theory to describe generic moire perturbation in van der Waals heterostructures of graphene and hexagonal crystals we investigate the electronic properties of such heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-valley relaxation and quantum transport regimes in two-dimensional transition metal dichalcogenides

Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin diffusion length, and we develop a theory of weak localisation/antilocalisation, describing the crossovers between the orthogonal, double-unitary and symplectic regimes of quantum transport in TMDCs.

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preprint2014arXiv

Strain-induced modifications of transport in gated graphene nanoribbons

We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it acquires a resonance structure, and finally becomes completely suppressed at larger strain. Edge disorder induces mode mixing in the contact regions, which can restore the conductance to its ballistic value. The valley-antisymmetric pseudo-magnetic field induced by inhomogeneous deformations leads to the formation of additional resonance states, which either originate from the coupling into Fabry-Perot states that extend through the system, or from the formation of states that are localized near the contacts, where the pseudo-magnetic field is largest. In particular, the n=0 pseudo-Landau level manifests itself via two groups of conductance resonances close to the charge neutrality point.

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preprint2013arXiv

Interplay between uniaxial strain and magnetophonon resonance in graphene

We study the fine structure of the phonon G peak in the inelastic light scattering spectra of strained graphene in the presence of a quantizing magnetic field. We show that under the conditions of the magnetophonon resonance (MPR), the spectral line shape in Raman spectra of the Γ-point longitudinal optic-transverse optical phonon undergoes multiple splitting and acquires a strong dependence on the polarization of the incoming and detected light. Interference of strain and MPR leads to the modification of the anticrossing branches, introducing the variation of the light polarization preferences depending on the proximity to the resonance, and their better resolution between neighboring anticrossings.

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preprint2013arXiv

Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects

We use a combined ab-initio calculations and k.p theory based approach to derive a low-energy effective Hamiltonian for monolayer MoS2 at the K point of the Brillouin zone. It captures the features which are present in first-principles calculations but not explained by the theory of Xiao et al. [Phys Rev Lett 108, 196802 (2012)], namely the trigonal warping of the valence and conduction bands, the electron-hole symmetry breaking, and the spin-splitting of the conduction band. We also consider other points in the Brillouin zone which might be important for transport properties. Our findings lead to a more quantitative understanding of the properties of this material in the ballistic limit.

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preprint2013arXiv

Transport signatures of pseudo-magnetic Landau levels in strained graphene ribbons

In inhomogeneously strained graphene, low-energy electrons experience a valley-antisymmetric pseudo-magnetic field which leads to the formation of localized states at the edge between the valence and conduction bands, understood in terms of peculiar n=0 pseudo-magnetic Landau levels. Here we show that such states can manifest themselves as an isolated quadruplet of low-energy conductance resonances in a suspended stretched graphene ribbon, where clamping by the metallic contacts results in a strong inhomogeneity of strain near the ribbon ends.

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preprint2012arXiv

Classical and quantum magneto-oscillations of current flow near a p-n junction in graphene

The proposed semiclassical theory predicts two types of oscillations in the flow of current injected from a point source near a ballistic p-n junction in graphene in a strong magnetic field. One originates from the classical effect of bunching of cyclotron orbits of electrons passing back and forth across the p-n interface, which displays a pronounced dependence on the commensurability between the cyclotron radii in the n- and p-regions. The other effect is caused by the interference of monochromatic electron waves in p-n junctions with equal carrier densities on the two sides and it consists in magneto-oscillations in the current transmission through the interface with periodicity similar to Shubnikov-de Haas oscillations.

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preprint2012arXiv

Conductance anomaly near the Lifshitz transition in strained bilayer graphene

Strain qualitatively changes the low-energy band structure of bilayer graphene, leading to the appearance of a pair of low-energy Dirac cones near each corner of the Brillouin zone, and a Lifshitz transition, (a saddle point in the dispersion relation) at an energy proportional to the strain [M. Mucha-Kruczynski, I.L. Aleiner, and V.I. Fal'ko, Phys. Rev. B 84, 041404 (2011)]. Here, we show that in the vicinity of the Lifshitz transition the conductance of a ballistic n-p and n-p-n junction exhibits an anomaly: a non-monotonic temperature and chemical potential dependence, with the size depending on the crystallographic orientation of the principal axis of the strain tensor. This effect is characteristic for junctions between regions of different polarity (n-p and n-p-n junctions), while there is no anomaly in junctions between regions of the same polarity (n-n' and n-n'-n junctions).

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preprint2012arXiv

Optical manifestations of symmetry breaking in bilayer graphene

We propose a spectroscopic method of identifying broken symmetry states of bilayer graphene. We demonstrate theoretically that, in contrast to gapped states, a strained bilayer crystal or nematic phase of the electronic liquid are distinguishable by the dependence of the lineshape of absorption on the polarization of the light. This property is characteristic for both the infrared and far-infrared spectral ranges, which correspond to the absorption by transitions between low-energy bands and split bands, and transitions between the low-energy valence and conduction bands, respectively.

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preprint2012arXiv

Phases of the excitonic condensate in two-layer graphene

Two graphene monolayers that are oppositely charged and placed close to each other are considered. Taking into account valley and spin degeneracy of electrons we analyze the symmetry of the excitonic insulator states in such a system and build a phase diagram that takes into account the effect of the symmetry breaking due to the external in-plane magnetic field and the carrier density imbalance between the layers.

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preprint2012arXiv

Role of electronic excitations in magneto-Raman spectra of graphene

We investigate the signature of the low-energy electronic excitations in the Raman spectrum of monolayer and bilayer graphenes. The dominant contribution to the Raman spectra is due to the interband electron-hole pairs, which belong to the irreducible representation A$_2$ of the point group C$_{6v}$ of the graphene lattice, and are characterised by crossed polarisation of incoming and outgoing photons. At high magnetic fields, this is manifested by the excitation of electron-hole (e-h) inter-Landau-level transitions with selection rule $n^-\to n^+$. Weaker Raman-active inter-Landau-level modes also exist. One of those has a selection rule similar to the infrared absorption process, $n^-\to(n\pm1)^+$, but the created e-h excitation belongs to the irreducible representation E$_2$ (rather than E$_1$) and couples to the optical phonon mode, thus undergoing an anticrossing with the optical phonon G-line in Raman in strong magnetic field. The fine structure of acquired by the G-line due to such anticrossing depends on the carrier density, inhomogeneity of doping, and presence of inhomogeneous strain in the sample.

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preprint2011arXiv

Intra-Landau level magnetoexcitons and the transition between quantum Hall states in undoped bilayer graphene

We study the collective modes of the quantum Hall states in undoped bilayer graphene in a strong perpendicular magnetic and electric field. Both for the well-known ferromagnetic state that is relevant for small electric field $E_\perp$ and the analogous valley/layer polarized one suitable for large $E_\perp$, the low energy physics is dominated by magnetoexcitons with zero angular momentum that are even combinations of excitons that conserve Landau orbitals. We identify a long wave length instability in both states, and argue that there is an intermediate range of the electric field $E^{(1)}_\text{c} < E_\perp < E^{(2)}_\text{c}$ where a gapless phase interpolates between the incompressible quantum Hall states. The experimental relevance of this crossover via a gapless state is discussed.

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preprint2011arXiv

Selection rules for Raman-active electronic excitations in carbon nanotubes

Raman measurements in carbon allotropes are generally associated with the exploration of the vibrational modes. Here, we present a theory of the non-resonant inelastic light scattering accompanied by the excitations of intersubband electron-hole pairs in carbon nanotubes and predict the selection rules and polarization properties of the dominant intersubband Raman active modes.

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preprint2011arXiv

Skipping and snake orbits of electrons: singularities and catastrophes

Near the sample edge, or a sharp magnetic field step the drift of two-dimensional electrons in a magnetic field has the form of skipping/snake orbits. We show that families of skipping/snake orbits of electrons injected at one point inside a 2D metal generically exhibit caustics folds, cusps and cusp triplets, and, in one extreme case, a section of the batterfly bifurcation. Periodic appearance of singularities along the $\pm B$-interface leads to the magneto-oscillations of nonlocal conductance in multi-terminal electronic devices.

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preprint2011arXiv

Strained bilayer graphene: Band structure topology and Landau level spectrum

We show that topology of the low-energy band structure in bilayer graphene critically depends on mechanical deformations of the crystal which may easily develop in suspended graphene flakes. We describe the Lifshitz transition that takes place in strained bilayers upon splitting the parabollic bands at intermediate energies into several Dirac cones at the energy scale of few meV. Then, we show how this affects the electron Landau level spectra and the quantum Hall effect.

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preprint2011arXiv

Transport anomaly at the ordering transition for adatoms on graphene

We analyze a manifestation of the partial ordering transition of adatoms on graphene in resistivity measurements. We find that Kekule mosaic ordering of adatoms increases sheet resistance of graphene, due to a gap opening in its spectrum, and that critical fluctuations of the order parameter lead to a non-monotonic temperature dependence of resistivity, with a cusp-like minimum at T=T_c.

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preprint2011arXiv

z/-z Symmetry of spin-orbit coupling and weak localization in graphene

We show that the influence of spin-orbit (SO) coupling on the weak localization effect for electrons in graphene depends on the lack or presence of z/-z symmetry in the system. While for z/-z asymmetric SO coupling, disordered graphene should display a weak anti-localization behavior at lowest temperature, z/-z symmetric coupling leads to an effective saturation of decoherence time which can be partially lifted by an in-plane magnetic field, thus, tending to restore the weak localization effect.

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preprint2010arXiv

Charge transfer between epitaxial graphene and silicon carbide

We analyse doping of graphene grown on SiC in two models which differ by the source of charge transfered to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyse the responsivity of graphene to the density variation by means of electrostatic gates.

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preprint2010arXiv

Signature of electronic excitations in the Raman spectrum of graphene

Inelastic light scattering from Dirac-type electrons in graphene is shown to be dominated by the generation of the inter-band electronic modes which are odd in terms of time-inversion symmetry and belong to the irreducible representation A$_2$ of the point group C$_{6v}$ of the honeycomb crystal. At high magnetic fields, these electron-hole excitations appear as peculiar $n^- \to n^+$ inter-Landau-level modes with energies $ω_n=2\sqrt{2n} \hbar v/λ_B$ and characteristically crossed polarisation of in/out photons.

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preprint2005arXiv

Magnetoresistance in metals with embedded magnetic nano-clusters

We propose a kinetic theory of transport in metals embedded with ferromagnetic nanoclusters, describing the dependence of the form of magnetoresistance on anisotropy characteristics of the ensemble of clusters and the influence of the electron spin depolarisation by clusters. We note that this effect is strongest when all the clusters have the same intrinsic easy-axis anisotropy.

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preprint2003arXiv

Two dimensional electron gas near full polarization

We establish the consistency of the Fermi liquid description and find a relation between Fermi liquid constants for the two dimensional electron system near the point of full polarization due to a parallel magnetic field $H$. Our results enable us to predict connections between different thermodynamic properties of the system. In particular, we find that near the point of full polarization $H_c$, the thermodynamic compressibility of the system experiences a jump with the subleading $(H_c-H)^{1/2}$ dependence on the magnetic field. Also, the magnetization has a cusp with the dependence of the type $(H-H_c) + (H_c-H)^{3/2}$ at $H<H_c$.

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preprint1995arXiv

Conductance fluctuations due to a single bistable scatterer in a weakly connected conductor.

We study the effect of a single bistable scatterer on conductance of mesoscopic conductors in the crossover regime from open to closed systems. After the resistance of the contact between the metallic grain and bulk electrode exceeds the resistance of a grain, the effect of a bistability is enhanced and takes the universal form. Its efficiency scales with the cross-section of the bistable impurity and of conductances of contacts but is independent of this impurity position inside a sample. Mutual correlations between magneto-conductance fluctuations at two conductance levels also look universal. Enhancement of the conductance sensitivity to variations of impurity configurations in samples with highly resistive contacts transforms the spectral density of a quantum excess noise toward a white-noise behavior and requires higher stability of the sample in order to observe mesoscopic effects in direct-current measurements.

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preprint1995arXiv

Multifractality: generic property of eigenstates of 2D disordered metals.

The distribution function of local amplitudes of eigenstates of a two-dimensional disordered metal is calculated. Although the distribution of comparatively small amplitudes is governed by laws similar to those known from the random matrix theory, its decay at larger amplitudes is non-universal and much slower. This leads to the multifractal behavior of inverse participation numbers at any disorder. From the formal point of view, the multifractality originates from non-trivial saddle-point solutions of supersymmetric $σ$-model used in calculations.

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preprint1995arXiv

Quantum conductance fluctuations in 3D ballistic adiabatic wires.

Quantum conductance of 3D ballistic wires with idealy flat boundaries obeys fluctuations with the properties quite distinguishable from those of universal conductance fluctuations: Both their amplitude and the sensitivity to the magnetic field flux $Φ=HS$ penetrated into the sample cross-sectional area $S$ are different and depend on details of the cross-sectioanl shape of the wire. When the latter is integrable, conductance fluctuations have the enlarged amplitude $δG\sim\left[(e^2/h)^3G\right]^{1/4}$. When the cross-sectional shape of a wire is non-integrable, the irregular part of a conductance has the $e^ 2/h$ scale, whereas the correlation field is reduced to the value of $H_S\sim (λ_F/\sqrt S)^{1/2}(Φ_0/S)$ and the correlation voltage of the nonlinear conductance fluctuations has the scale of $eV_c\sim\hbar^2/mS\sim E_F/(S/λ_F)$, where $λ_F=1/p_F$ is the Fermi wavelength.

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