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Rohit P. Prasankumar

Rohit P. Prasankumar contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall physics.optics cond-mat.mtrl-sci cond-mat.other

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preprint2026arXiv

Polar enhancement of optical nonlinearities and domain-driven second harmonic contrast in bismuth telluro-halide van der Waals crystals

The BiTeX family of polar van der Waals (vdW) semiconductors offers a unique platform for exploring the interplay between polar crystalline structure and nonlinear optical phenomena. Here, we utilize second harmonic generation (SHG) polarimetry to demonstrate giant anisotropic optical nonlinearities in BiTeBr and BiTeI driven by contributions to the crystals' nonlinear polarizability originating from their permanent dipole moment. In addition, using SHG microscopy, we show that BiTeI displays a distinctive SHG spatial texture consisting of thread-like regions of reduced harmonic intensity. These features demark the boundaries between phase and anti-phase polar domains, confirmed via piezoresponse force microscopy and are attributable to disorder-driven restoration of inversion symmetry and concomitant optical interference effects. Our results unveil the power of polarization-resolved SHG microscopy in elucidating the intricate relationship between structure, symmetry, and nonlinear optical responses in polar vdW materials and highlight the promise of BiTeX as a material platform for domain-engineered nanoscale nonlinear photonics.

preprint2024arXiv

Twisted nonlinear optics in monolayer van der Waals crystals

In addition to a plethora of emergent phenomena, the spatial topology of optical vortices enables an array of applications spanning communications to quantum photonics. Nonlinear optics is essential in this context, providing access to an infinitely large set of quantum states associated with the orbital angular momentum of light. Nevertheless, the realization of such processes have failed to keep pace with the ever-growing need to shrink the fundamental length-scale of photonic technologies to the nanometer regime6. Here, we push the boundaries of vortex nonlinear optics to the ultimate limits of material dimensionality. By exploiting second and third-order frequency-mixing processes in semiconducting monolayers, we demonstrate the independent manipulation of the wavelength, orbital angular momentum, and spatial distribution of vortex light-fields. Due to the atomically-thin nature of the host quantum material, this control spans a broad spectral bandwidth in a highly-integrable platform, unconstrained by the traditional limits of bulk nonlinear optical materials. Our work heralds a new avenue for ultra-compact and scalable hybrid nanotechnologies empowered by twisted nonlinear light-matter interactions in van der Waals quantum nanomaterials.

preprint2022arXiv

Revealing Charge Carrier Dynamics and Transport in Te-Doped GaAsSb and GaAsSbN Nanowires by Correlating Ultrafast Terahertz Spectroscopy and Optoelectronic Characterization

Recent advances in the growth of III-V semiconductor nanowires (NWs) hold great promise for nanoscale optoelectronic device applications. Recently, it was found that a small amount of nitrogen (N) incorporation in III-V semiconductor NWs can effectively red-shift their wavelength of operation and tailor their electronic properties for specific applications. However, understanding the impact of N incorporation on non-equilibrium charge carrier dynamics and transport in semiconducting NWs is critical in achieving efficient semiconducting NW devices. In this work, ultrafast optical pump-terahertz (THz) probe spectroscopy (OPTP) and electrical characterization have been used to study non-equilibrium carrier dynamics and equilibrium transport in Te-doped GaAsSb and dilute nitride GaAsSb NWs, with the goal of correlating these results with their photo-response under bias and their low-frequency noise characteristics. Nitrogen incorporation in GaAsSb NWs led to a significant increase in the carrier scattering rate, resulting in a severe reduction in carrier mobility. Carrier recombination lifetimes of 33 ps and 147 ps in GaAsSbN and GaAsSb NWs, respectively, were determined using ultrafast OPTP measurements. The reduction in the carrier lifetime and photoinduced optical conductivities are due to the presence of N-induced defects, leading to deterioration in the electrical and optical characteristics of dilute nitride NWs relative to the non-nitride NWs. Finally, we observed a very fast rise time of ~ 2 ps for both NW materials, directly impacting their potential use as high-speed photodetectors.

preprint2021arXiv

High Entropy Oxide Relaxor Ferroelectrics

Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional doping of known ferroelectrics, as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO3 perovskite allows stabilization of novel relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are used to create single crystal Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 [Ba(5B)O] films. The high levels of configurational disorder present in this system is found to influence dielectric relaxation, phase transitions, nano-polar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first principles theory calculations are used to predict possible combinations of cations to quantify the relative feasibility of formation of highly disordered single-phase perovskite systems. The ability to stabilize single-phase perovskites with such a large number of different cations on the B-sites offers new possibilities for designing high-performance materials for piezoelectric, pyroelectric and tunable dielectric applications.

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