Researcher profile

Rohan Dhall

Rohan Dhall contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2026arXiv

Nanocrystal Geometry Governs Phase Transformation Pathways in Palladium Hydride

Pathways and structural dynamics of phase transformations impact performance of materials in energy and information storage technologies. Palladium hydride ($\mathrm{PdH}_x$) nanocrystals are an ideal model system for studying solute-induced phase transformations, where elastic energy from lattice mismatch between $α$-$\mathrm{PdH}_x$ and $β$-$\mathrm{PdH}_x$ phases is often considered a key to determining the transformation pathways. $α/β$-$\mathrm{PdH}_x$ interfacial elastic energy is affected by the confined geometry of a nanocrystal. However, how nanocrystal geometry influences phase transformation pathways is largely unknown. Using in situ liquid phase transmission electron microscopy, we directly visualize hydrogenation in Pd nanocrystals with two geometries -- a nanocube and a hexagonal nanoplate. Both follow similar sequences of an initially curved nucleus, interface flattening, and reverse-stage nucleation; however, their evolving $α/β$-$\mathrm{PdH}_x$ interfaces exhibit geometry-dependent crystallographic alignments. In nanocubes, $\{100\}$-aligned configurations conform to static elastic energy ordering, representing a pathway that maintains a local mechanical equilibrium, whereas nanoplates display both $\{110\}$- and $\{211\}$-aligned interfaces. Theoretical simulations show that geometry determines the accessibility of alternative phase transformation pathways as the system is driven far from equilibrium during hydrogenation. These findings identify geometry as a fundamental parameter for directing phase transformation pathways, offering design principles for accessing atypical configurations and improving properties of intercalation-based devices.

preprint2020arXiv

Temperature Driven Transformation of CsPbBr$_3$ Nanoplatelets into Mosaic Nanotiles in Solution through Self-Assembly

Two-dimensional colloidal halide perovskite nanocrystals are promising materials for light emitting applications. In addition, they can be used as components to create a variety of materials through physical and chemical transformations. Recent studies focused on nanoplatelets that are able to self-assemble and transform on solid substrates. Yet, the mechanism behind the process and the atomic arrangement of their assemblies remain unclear. Here, we present the transformation of self-assembled stacks of CsPbBr$_3$ nanoplatelets in solution, capturing the different stages of the process by keeping the solutions at room temperature and monitoring the nanocrystal morphology over a period of a few months. Using ex-situ transmission electron microscopy and surface analysis, we demonstrate that the transformation mechanism can be understood as oriented attachment, proceeding through the following steps: i) desorption of the ligands from the particles surfaces, causing the merging of nanoplatelet stacks, which first form nanobelts; ii) merging of neighboring nanobelts that form more extended nanoplates; and iii) attachment of nanobelts and nanoplates, which create objects with an atomic structure that resemble a mosaic made of broken nanotiles. We reveal that the starting nanoplatelets merge seamlessly and defect-free on an atomic scale in small and thin nanobelts. However, aged nanobelts and nanoplates, which are mainly stabilized by amine/ammonium ions, link through a bilayer of CsBr. In this case, the atomic columns of neighboring perovskite lattices shift by a half-unit-cell, forming Ruddlesden-Popper planar faults.

preprint2016arXiv

Charge Neutral MoS2 Field Effect Transistors Through Oxygen Plasma Treatment

Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and variability of VT stems from unclean interfaces, trapped charges in the underlying substrate, and sulfur vacancies created during the mechanical exfoliation process. In this study, we demonstrate a simple and reliable oxygen plasma treatment, which mitigates the effects of unintentional doping created by surface defect cites, such as S vacancies, and surface contamination. This plasma treatment restores charge neutrality to the MoS2 and shifts the threshold turn-on voltage towards 0V. Out of the 8 devices measured, all exhibit a shift of the FET turn-on voltage from an average of -18.7V to -0.9V. The oxygen plasma treatment passivates these defects, which reduces surface scattering, causing increased mobility and improved subthreshold swing. For as-prepared devices with low mobilities (~0.01cm2/V.s), we observe up to a 190-fold increase in mobility after exposure to the oxygen plasma. Perhaps the most important aspect of this oxygen plasma treatment is that it reduces the device-to-device variability, which is a crucial factor in realizing any practical application of these devices.

preprint2015arXiv

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from semimetallic graphene, insulating boron nitride, to semiconductors with bandgaps from middle infrared to visible light. Here, we introduce new layered semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into long-wavelength infrared (LWIR) regime and cannot be readily reached by other layered materials. Moreover, polarization-resolved infrared absorption and Raman studies reveal in-plane anisotropic properties of b-AsP. This family of layered b-AsP materials extend the electromagnetic spectra covered by 2D layered materials to the LWIR regime, and may find unique applications for future all 2D layered material based devices.

preprint2015arXiv

Scanning gate microscopy of ultra clean carbon nanotube quantum dots

We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlapping multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can be tuned from the weak to strong coupling regime.

preprint2010arXiv

Probing thermal expansion of graphene and modal dispersion at low-temperature using graphene NEMS resonators

We use suspended graphene electromechanical resonators to study the variation of resonant frequency as a function of temperature. Measuring the change in frequency resulting from a change in tension, from 300 K to 30 K, allows us to extract information about the thermal expansion of monolayer graphene as a function of temperature, which is critical for strain engineering applications. We find that thermal expansion of graphene is negative for all temperatures between 300K and 30K. We also study the dispersion, the variation of resonant frequency with DC gate voltage, of the electromechanical modes and find considerable tunability of resonant frequency, desirable for applications like mass sensing and RF signal processing at room temperature. With lowering of temperature, we find that the positively dispersing electromechanical modes evolve to negatively dispersing ones. We quantitatively explain this crossover and discuss optimal electromechanical properties that are desirable for temperature compensated sensors.

preprint2010arXiv

Tuning mechanical modes and influence of charge screening in nanowire resonators

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of the resonant frequency with DC gate voltage (VgDC). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We observe the mixing of mechanical modes with VgDC. We also experimentally probe and quantitatively explain the hysteretic non-linear properties, as a function of VgDC, of the resonator using the Duffing equation.