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Researcher profile

Hari S. Solanki

Hari S. Solanki contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

7 published item(s)

preprint2012arXiv

Coupling between quantum Hall state and electromechanics in suspended graphene resonator

Using graphene resonator, we perform electromechanical measurements in quantum Hall regime to probe the coupling between a quantum Hall (QH) system and its mechanical motion. Mechanically perturbing the QH state through resonance modifies the DC resistance of the system and results in a Fano-lineshape due to electronic interference. Magnetization of the system modifies the resonator's equilibrium position and effective stiffness leading to changes in resonant frequency. Our experiments show that there is an intimate coupling between the quantum Hall state and mechanics - electron transport is affected by physical motion and in turn the magnetization modifies the electromechanical response.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Facile fabrication of lateral nanowire wrap-gate devices with improved performance

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

High Q electromechanics with InAs nanowire quantum dots

In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (SET) and we observe a strong coupling between electrons and mechanical modes at resonance; the rate of electron tunneling is approximately 10 times the resonant frequency. Above and below the mechanical resonance, the magnitude of Coulomb peaks is different and we observe Fano resonance in conductance due to the interference between two contributions to potential of the SET. The quality factor ($Q$) of these devices is observed $\sim10^5$ at 100 mK.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tunable thermal conductivity in defect engineered nanowires at low temperatures

We measure the thermal conductivity ($κ$) of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 to 50 K. We argue that the low $κ$ arises from the strong localization of phonons in the random superlattice of twin-defects oriented perpendicular to the axis of the NW. We observe significant electronic contribution arising from the surface accumulation layer which gives rise to tunability of $κ$ with the application of electrostatic gate and magnetic field. Our devices and measurements of $κ$ at different carrier concentrations and magnetic field without introducing structural defects, offer a means to study new aspects of nanoscale thermal transport.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nanoscale electromechanical resonators as probes of the charge density wave transition in NbSe$_2$

We study nanoelectromechanical resonators fabricated from suspended flakes of NbSe$_2$ (thickness$\sim$30-50 nm) to probe charge density wave (CDW) physics at nanoscale. Variation of elastic and electronic properties accompanying the CDW phase transition (around 30 K) are investigated simultaneously using the devices as self-sensing heterodyne mixers. Elastic modulus is observed to change by 10 per cent, an amount significantly larger than what had been reported earlier in the case of bulk crystals. We also study the modulation of conductance by electric field effect, and examine its relation to the order parameter and the CDW energy gap at the Fermi surface.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Probing thermal expansion of graphene and modal dispersion at low-temperature using graphene NEMS resonators

We use suspended graphene electromechanical resonators to study the variation of resonant frequency as a function of temperature. Measuring the change in frequency resulting from a change in tension, from 300 K to 30 K, allows us to extract information about the thermal expansion of monolayer graphene as a function of temperature, which is critical for strain engineering applications. We find that thermal expansion of graphene is negative for all temperatures between 300K and 30K. We also study the dispersion, the variation of resonant frequency with DC gate voltage, of the electromechanical modes and find considerable tunability of resonant frequency, desirable for applications like mass sensing and RF signal processing at room temperature. With lowering of temperature, we find that the positively dispersing electromechanical modes evolve to negatively dispersing ones. We quantitatively explain this crossover and discuss optimal electromechanical properties that are desirable for temperature compensated sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tuning mechanical modes and influence of charge screening in nanowire resonators

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of the resonant frequency with DC gate voltage (VgDC). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We observe the mixing of mechanical modes with VgDC. We also experimentally probe and quantitatively explain the hysteretic non-linear properties, as a function of VgDC, of the resonator using the Duffing equation.

0 citations0 reviewsNo code linkedOpen access