Researcher profile

Mandar M. Deshmukh

Mandar M. Deshmukh contributes to research discovery and scholarly infrastructure.

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Published work

16 published item(s)

preprint2025arXiv

Modulation of quantum geometry and its coupling to pseudo-electric field by dynamic strain

Two-dimensional materials are a fertile ground for exploring quantum geometric phenomena, with Berry curvature and its first moment, the Berry curvature dipole, playing a central role in their electronic response. These geometric properties influence electronic transport and result in the anomalous and nonlinear Hall effects, and are typically controlled using static electric fields or strain. However, the possibility of modulating quantum geometric quantities in real-time remains unexplored. Here, we demonstrate the dynamic modulation of Berry curvature and its moments, as well as the generation of a pseudo-electric field using time-dependent strain. By placing heterostructures on a membrane, we introduce oscillatory strain together with an in-plane AC electric field and measure Hall signals that are modulated at linear combinations of the frequencies of strain and electric field. Our measurements reveal modulation of Berry curvature and its first moment. Notably, we provide direct experimental evidence of pseudo-electric field that results in an unusual dynamic strain-induced Hall response. This approach opens up a new pathway for controlling quantum geometry on demand, moving beyond conventional static perturbations. The pseudo-electric field provides a framework for external electric field-free anomalous Hall response and opens new avenues for probing the topological properties.

preprint2022arXiv

Superconducting vortex-charge measurement using cavity electromechanics

As the magnetic field penetrates the surface of a superconductor, it results in the formation of flux-vortices. It has been predicted that the flux-vortices will have a charged vortex core and create a dipolelike electric field. Such a charge trapping in vortices is particularly enhanced in high-T$_c$ superconductors (HTS). Here, we integrate a mechanical resonator made of a thin flake of HTS Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ into a microwave circuit to realize a cavity-electromechanical device. Due to the exquisite sensitivity of cavity-based devices to the external forces, we directly detect the charges in the flux-vortices by measuring the electromechanical response of the mechanical resonator. Our measurements reveal the strength of surface electric dipole moment due to a single vortex core to be approximately 30~$|e|a_B$, equivalent to a vortex charge per CuO$_2$ layer of $3.7\times 10^{-2}|e|$, where $a_B$ is the Bohr radius and $e$ is the electronic charge.

preprint2021arXiv

Coplanar cavity for strong coupling between photons and magnons in van der Waals antiferromagnet

We investigate the performance of niobium nitride superconducting coplanar waveguide resonators towards hybrid quantum devices with magnon-photon coupling. We find internal quality factors ~ 20000 at 20 mK base temperature, in zero magnetic field. We find that by reducing film thickness below 100 nm internal quality factor greater than 1000 can be maintained up to parallel magnetic field of ~ 1 T and perpendicular magnetic field of ~ 100 mT. We further demonstrate strong coupling of microwave photons in these resonators, with magnons in chromium trichloride, a van der Waals antiferromagnet, which shows that these cavities serve as a good platform for studying magnon-photon coupling in 2D magnonics based hybrid quantum systems. We demonstrate strong magnon-photon coupling for both optical and acoustic magnon modes of an antiferromagnet.

preprint2020arXiv

Facile deterministic cutting of 2D materials for twistronics using a tapered fibre scalpel

We present a quick and reliable method to cut 2D materials for creating 2D twisted heterostructures and devices. We demonstrate the effectiveness of using a tapered fibre scalped for cutting graphene. Electrical transport measurements show evidence of the desired twist between the graphene layers fabricated using our technique. Statistics of the number of successfully twisted stacks made using our method is compared with h-BN assisted tear-and-stack method. Also, our method can be used for twisted stack fabrication of materials that are few nanometers thick. Finally, we demonstrate the versatility of the tapered fibre scalped for other shaping related applications for sensitive 2D materials.

preprint2020arXiv

Tunable bandwidths and gaps in twisted double bilayer graphene system on the verge of correlations

We use temperature-dependent resistivity in small-angle twisted double bilayer graphene to measure bandwidths and gaps of the bands. This electron-hole asymmetric system has one set of non-dispersing bands that splits into two flat bands with the electric field - distinct from the twisted bilayer system. With electric field, the gap between two emergent flat bands increases monotonically and bandwidth is tuned from 1 meV to 15 meV. These two flat bands with gap result in a series of thermally induced insulator to metal transitions - we use a model, at charge neutrality, to measure the bandwidth using only transport measurements. Having two flat bands with tunable gap and bandwidth offers an opportunity to probe the emergence of correlations.

preprint2013arXiv

Tunable Superlattice in Graphene To Control the Number of Dirac Points

Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.

preprint2012arXiv

Coupling between quantum Hall state and electromechanics in suspended graphene resonator

Using graphene resonator, we perform electromechanical measurements in quantum Hall regime to probe the coupling between a quantum Hall (QH) system and its mechanical motion. Mechanically perturbing the QH state through resonance modifies the DC resistance of the system and results in a Fano-lineshape due to electronic interference. Magnetization of the system modifies the resonator's equilibrium position and effective stiffness leading to changes in resonant frequency. Our experiments show that there is an intimate coupling between the quantum Hall state and mechanics - electron transport is affected by physical motion and in turn the magnetization modifies the electromechanical response.

preprint2011arXiv

Dual top gated graphene transistor in the quantum Hall regime

We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport measurements at low temperature and in the presence of magnetic field show various integer and fractionally quantized conductance plateaus. We explain these results based on the mixing of the edge channels and find that inhomogeneity plays an important role in defining the exact quantization of these plateaus, an issue critical for the metrology applications of \emph{p-n} junctions.

preprint2011arXiv

Facile fabrication of lateral nanowire wrap-gate devices with improved performance

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.

preprint2011arXiv

Field-effect modulation of conductance in VO2 nanobeam transistors with HfO2 as the gate dielectric

We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent) of our devices induced by gate voltage when the system is in the insulating phase. The response is reversible and hysteretic, and the area of hysteresis loop becomes larger as the rate of gate sweep is slowed down. A phase lag exists between the response of the conductance and the gate voltage. This indicates the existence of a memory of the system and we discuss its possible origins.

preprint2011arXiv

High Q electromechanics with InAs nanowire quantum dots

In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (SET) and we observe a strong coupling between electrons and mechanical modes at resonance; the rate of electron tunneling is approximately 10 times the resonant frequency. Above and below the mechanical resonance, the magnitude of Coulomb peaks is different and we observe Fano resonance in conductance due to the interference between two contributions to potential of the SET. The quality factor ($Q$) of these devices is observed $\sim10^5$ at 100 mK.

preprint2011arXiv

Tunable thermal conductivity in defect engineered nanowires at low temperatures

We measure the thermal conductivity ($κ$) of individual InAs nanowires (NWs), and find that it is 3 orders of magnitude smaller than the bulk value in the temperature range of 10 to 50 K. We argue that the low $κ$ arises from the strong localization of phonons in the random superlattice of twin-defects oriented perpendicular to the axis of the NW. We observe significant electronic contribution arising from the surface accumulation layer which gives rise to tunability of $κ$ with the application of electrostatic gate and magnetic field. Our devices and measurements of $κ$ at different carrier concentrations and magnetic field without introducing structural defects, offer a means to study new aspects of nanoscale thermal transport.

preprint2010arXiv

Nanoscale electromechanical resonators as probes of the charge density wave transition in NbSe$_2$

We study nanoelectromechanical resonators fabricated from suspended flakes of NbSe$_2$ (thickness$\sim$30-50 nm) to probe charge density wave (CDW) physics at nanoscale. Variation of elastic and electronic properties accompanying the CDW phase transition (around 30 K) are investigated simultaneously using the devices as self-sensing heterodyne mixers. Elastic modulus is observed to change by 10 per cent, an amount significantly larger than what had been reported earlier in the case of bulk crystals. We also study the modulation of conductance by electric field effect, and examine its relation to the order parameter and the CDW energy gap at the Fermi surface.

preprint2010arXiv

Probing thermal expansion of graphene and modal dispersion at low-temperature using graphene NEMS resonators

We use suspended graphene electromechanical resonators to study the variation of resonant frequency as a function of temperature. Measuring the change in frequency resulting from a change in tension, from 300 K to 30 K, allows us to extract information about the thermal expansion of monolayer graphene as a function of temperature, which is critical for strain engineering applications. We find that thermal expansion of graphene is negative for all temperatures between 300K and 30K. We also study the dispersion, the variation of resonant frequency with DC gate voltage, of the electromechanical modes and find considerable tunability of resonant frequency, desirable for applications like mass sensing and RF signal processing at room temperature. With lowering of temperature, we find that the positively dispersing electromechanical modes evolve to negatively dispersing ones. We quantitatively explain this crossover and discuss optimal electromechanical properties that are desirable for temperature compensated sensors.

preprint2010arXiv

Tuning mechanical modes and influence of charge screening in nanowire resonators

We probe electro-mechanical properties of InAs nanowire (diameter ~ 100 nm) resonators where the suspended nanowire (NW) is also the active channel of a field effect transistor (FET). We observe and explain the non-monotonic dispersion of the resonant frequency with DC gate voltage (VgDC). The effect of electronic screening on the properties of the resonator can be seen in the amplitude. We observe the mixing of mechanical modes with VgDC. We also experimentally probe and quantitatively explain the hysteretic non-linear properties, as a function of VgDC, of the resonator using the Duffing equation.

preprint2009arXiv

Non-equilibrium breakdown of quantum Hall state in graphene

In this report we experimentally probe the non-equilibrium breakdown of the quantum Hall state in monolayer graphene by injecting a high current density ($\sim$1A/m). The measured critical currents for dissipationless transport in the vicinity of integer filling factors show a dependence on filling factor. The breakdown can be understood in terms of inter Landau level (LL) scattering resulting from mixing of wavefunctions of different LLs. To further study the effect of transverse electric field, we measured the transverse resistance between the $ν=2$ to $ν=6$ plateau transition for different bias currents and observed an invariant point.