BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Stephen B. Cronin

Stephen B. Cronin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

Trust snapshot

Quick read

Trust 21 - Emerging
7works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2016arXiv

Charge Neutral MoS2 Field Effect Transistors Through Oxygen Plasma Treatment

Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and variability of VT stems from unclean interfaces, trapped charges in the underlying substrate, and sulfur vacancies created during the mechanical exfoliation process. In this study, we demonstrate a simple and reliable oxygen plasma treatment, which mitigates the effects of unintentional doping created by surface defect cites, such as S vacancies, and surface contamination. This plasma treatment restores charge neutrality to the MoS2 and shifts the threshold turn-on voltage towards 0V. Out of the 8 devices measured, all exhibit a shift of the FET turn-on voltage from an average of -18.7V to -0.9V. The oxygen plasma treatment passivates these defects, which reduces surface scattering, causing increased mobility and improved subthreshold swing. For as-prepared devices with low mobilities (~0.01cm2/V.s), we observe up to a 190-fold increase in mobility after exposure to the oxygen plasma. Perhaps the most important aspect of this oxygen plasma treatment is that it reduces the device-to-device variability, which is a crucial factor in realizing any practical application of these devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Photo-thermal Self-oscillations in Cavity-Coupled Carbon Nanotube pn-Devices

We observe photothermal self-oscillations in individual, suspended, quasi-metallic carbon nanotube (CNT) pn devices irradiated with focused CW 633nm light. Here, the bottom of the trench forms an optical cavity with an anti-node at lambda/4. Oscillations arise from the optical heating of the nanotube, which causes thermal contraction of the nanotube (negative thermal expansion coefficient). This, in turn, moves the CNT out of the anti-node (maximum field intensity), where the nanotube cools to a lower temperature. It then expands and returns to the maximum field intensity anti-node where it is optically heated once again. The oscillations are observed through a change of the tunneling current in the CNT device. A pn-junction, established by two electrostatic gates positioned beneath the nanotube, results in Zener tunneling, which depends strongly on temperature. A Zener tunneling model with oscillating temperature shows good agreement with our measured I-V curves, providing further evidence that these oscillations are photothermal in nature.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Black Arsenic-Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties

Two-dimensional (2D) layered materials with diverse properties have attracted significant interest in the past decade. The layered materials discovered so far have covered a wide, yet discontinuous electromagnetic spectral range from semimetallic graphene, insulating boron nitride, to semiconductors with bandgaps from middle infrared to visible light. Here, we introduce new layered semiconductors, black arsenic-phosphorus (b-AsP), with highly tunable chemical compositions and electronic and optical properties. Transport and infrared absorption studies demonstrate the semiconducting nature of b-AsP with tunable bandgaps, ranging from 0.3 to 0.15 eV. These bandgaps fall into long-wavelength infrared (LWIR) regime and cannot be readily reached by other layered materials. Moreover, polarization-resolved infrared absorption and Raman studies reveal in-plane anisotropic properties of b-AsP. This family of layered b-AsP materials extend the electromagnetic spectra covered by 2D layered materials to the LWIR regime, and may find unique applications for future all 2D layered material based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Scanning gate microscopy of ultra clean carbon nanotube quantum dots

We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlapping multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can be tuned from the weak to strong coupling regime.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single Ion Adsorption and Switching in Nano-Electronics

Single ion detection has, for many years, been the domain of large devices such as the Geiger counter, and studies on interactions of ionized gasses with materials have been limited to large systems. To date, there have been no reports on single gaseous ion interaction with microelectronic devices, and single neutral atom detection techniques have shown only small, barely detectable responses. Here, we report the first observation of single ion adsorption onto individual carbon nanotubes (CNTs), which, due to the severely restricted one-dimensional current path, experience discrete, quantized resistance increases of over two orders of magnitude. Only positive ions cause changes, by the mechanism of ion potential induced carrier depletion, which is supported by density functional and Landauer transport theory. Our observations reveal a new single-ion/CNT heterostructure with novel electronic properties, and demonstrate that as electronics are ultimately scaled towards the one-dimensional limit, atomic scale effects become increasingly important.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Direct Observation of Born-Oppenheimer Approximation Breakdown in Carbon Nanotubes

Raman spectra and electrical conductance of individual, pristine, suspended, metallic single-walled carbon nanotubes are measured under applied gate potentials. The G- band is observed to downshift with small applied gate voltages, with the minima occurring at EF = +/- 1/2 Ephonon, contrary to adiabatic predictions. A subsequent upshift in the Raman frequency at higher gate voltages results in a 'W'-shaped Raman shift profile that agrees well with a non-adiabatic phonon renormalization model. This behavior constitutes the first experimental confirmation of the theoretically predicted breakdown of the Born-Oppenheimer approximation in individual single walled carbon nanotubes.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Screening of Excitons in Single, Suspended Carbon Nanotubes

Resonant Raman spectroscopy of single carbon nanotubes suspended across trenches displays red shifts of up to 30 meV of the electronic transition energies as a function of the surrounding dielectric environment. We develop a simple scaling relationship between the exciton binding energy and the external dielectric function and thus quantify the effect of screening. Our results imply that the underlying particle interaction energies change by hundreds of meV.

0 citations0 reviewsNo code linkedOpen access