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Rajat Sharma

Rajat Sharma appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
physics.opticsComputer VisionArtificial IntelligenceHuman-Computer InteractionMachine LearningSoftware Engineering

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Published work

5 published item(s)

preprint2025arXiv

Real-Time Drivers' Drowsiness Detection and Analysis through Deep Learning

A long road trip is fun for drivers. However, a long drive for days can be tedious for a driver to accommodate stringent deadlines to reach distant destinations. Such a scenario forces drivers to drive extra miles, utilizing extra hours daily without sufficient rest and breaks. Once a driver undergoes such a scenario, it occasionally triggers drowsiness during driving. Drowsiness in driving can be life-threatening to any individual and can affect other drivers' safety; therefore, a real-time detection system is needed. To identify fatigued facial characteristics in drivers and trigger the alarm immediately, this research develops a real-time driver drowsiness detection system utilizing deep convolutional neural networks (DCNNs) and OpenCV.Our proposed and implemented model takes real- time facial images of a driver using a live camera and utilizes a Python-based library named OpenCV to examine the facial images for facial landmarks like sufficient eye openings and yawn-like mouth movements. The DCNNs framework then gathers the data and utilizes a per-trained model to detect the drowsiness of a driver using facial landmarks. If the driver is identified as drowsy, the system issues a continuous alert in real time, embedded in the Smart Car technology.By potentially saving innocent lives on the roadways, the proposed technique offers a non-invasive, inexpensive, and cost-effective way to identify drowsiness. Our proposed and implemented DCNNs embedded drowsiness detection model successfully react with NTHU-DDD dataset and Yawn-Eye-Dataset with drowsiness detection classification accuracy of 99.6% and 97% respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Point Cloud Upsampling and Normal Estimation using Deep Learning for Robust Surface Reconstruction

The reconstruction of real-world surfaces is on high demand in various applications. Most existing reconstruction approaches apply 3D scanners for creating point clouds which are generally sparse and of low density. These points clouds will be triangulated and used for visualization in combination with surface normals estimated by geometrical approaches. However, the quality of the reconstruction depends on the density of the point cloud and the estimation of the surface normals. In this paper, we present a novel deep learning architecture for point cloud upsampling that enables subsequent stable and smooth surface reconstruction. A noisy point cloud of low density with corresponding point normals is used to estimate a point cloud with higher density and appendant point normals. To this end, we propose a compound loss function that encourages the network to estimate points that lie on a surface including normals accurately predicting the orientation of the surface. Our results show the benefit of estimating normals together with point positions. The resulting point cloud is smoother, more complete, and the final surface reconstruction is much closer to ground truth.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities

We present experimental results on the observation of a bulk second-order nonlinear susceptibility derived from both free-space and integrated measurements in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely X(2)yyy and X(2)xxy. Additionally, we show how the generated second-harmonic signal may be actively tuned through the application of bias voltages across silicon nitride. The nonlinear material properties measured here are anticipated to allow for the practical realization of new nanophotonic devices in CMOS-compatible silicon nitride waveguides, adding to their viability for telecommunication, data communication, and optical signal processing applications.

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preprint2015arXiv

Capacitively-Induced Free-Carrier Effects in Nanoscale Silicon Waveguides for Electro-Optic Modulation

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the cladding-dependent and capacitively-induced free-carrier effects in each of these waveguides. By comparing our measured data with simulation results, we confirm that the observed voltage dependencies of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguide, and we show for the first time how strongly these effects depend on the cladding material which comes into contact with the silicon waveguide. Additionally, the waveguide loss is found to have a particularly high sensitivity to the applied voltage, and may therefore find use in a wide range of applications which require low- or high-loss propagation. Collectively, these phenomena may be incorporated into more complex waveguide designs in the future to create high-efficiency electro-optic modulators.

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preprint2015arXiv

Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides

We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively-driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

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