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Rafal Oszwaldowski appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.
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Published work
Magnetic anisotropies in quantum dots (QDs) doped with magnetic ions are discussed in terms of two frameworks: anisotropic $g$-factors and magnetocrystalline anisotropy energy. It is shown that even a simple model of zinc-blende p-doped QDs displays a rich diagram of magnetic anisotropies in the QD parameter space. Tuning the confinement allows to control magnetic easy axes in QDs in ways not available for the better-studied bulk.
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.
We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we predict the magnitude of the domain-wall resistance without disorder and compare it to experimental values. Next we add disorder to the model and study numerically both small and large disorder regime.