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J. E. Han

J. E. Han contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2013arXiv

Double Occupancy and Magnetic Susceptibility of the Anderson Impurity Model out of Equilibrium

We use different numerical approaches to calculate the double occupancy and mag- netic susceptibility as a function of a bias voltage in an Anderson impurity model. Specifically, we compare results from the Matsubara-voltage quantum Monte-Carlo approach (MV-QMC), the scattering-states numerical renormalization group (SNRG), and real-time quantum Monte-Carlo (RT-QMC), covering Coulomb repulsions ranging from the weak-coupling well into the strong- coupling regime. We observe a distinctly different behavior of the double occupancy and the magnetic response. The former measures charge fluctuations and thus only indirectly exhibits the Kondo scale, while the latter exhibits structures on the scale of the equilibrium Kondo tempera- ture. The Matsubara-voltage approach and the scattering-states numerical renormalization group yield consistent values for the magnetic susceptibility in the Kondo limit. On the other hand, all three numerical methods produce different results for the behavior of charge fluctuations in strongly interacting dots out of equilibrium.

preprint2012arXiv

Local lattice distortions around $\rm{Mn^{2+}}$ cause in-plane uniaxial magnetic anisotropy in Ga(Mn)As

We theoretically investigate the interplay between local lattice distortions around $\rm{Mn^{2+}}$ ion impurity and the ion&#39;s magnetic polarization, mediated through spin-orbit coupling of hole. We show that the tetrahedral symmetry around $\rm{Mn^{2+}}$ ion impurity is spontaneously broken even in the paramagnetic regime. Modest local lattice distortions around the impurity $\rm{Mn^{2+}}$ ion, along with the growth strain, stabilize magnetization along $< 110 >$ directions, in the ferromagnetic regime. We explain the experimentally observed in-plane uniaxial magnetic anisotropy seen in this system using this symmetry-breaking mechanism.

preprint2012arXiv

Reentrant Formation of Magnetic Polarons in Quantum Dots

We propose a model of magnetic polaron formation in semiconductor quantum dots doped with magnetic ions. A wetting layer serves as a reservoir of photo-generated holes, which can be trapped by the adjacent quantum dots. For certain hole densities, the temperature dependence of the magnetization induced by the trapped holes is reentrant: it disappears for some temperature range and reappears at higher temperatures. We demonstrate that this peculiar effect is not an artifact of the mean field approximation and persists after statistical spin fluctuations are accounted for. We predict fingerprints of reentrant magnetic polarons in photoluminescence spectra.

preprint2011arXiv

Effective Equilibrium Theory of Nonequilibrium Quantum Transport

The theoretical description of strongly correlated quantum systems out of equilibrium presents several challenges and a number of open questions persist. In this paper we focus on nonlinear electronic transport through an interacting quantum dot maintained at finite bias using a concept introduced by Hershfield [Phys. Rev. Lett. 70, 2134 (1993)] whereby one can express such nonequilibrium quantum impurity models in terms of the system&#39;s Lippmann-Schwinger operators. These scattering operators allow one to reformulate the nonequilibrium problem as an effective equilibrium problem associated with a modified Hamiltonian. In this paper we provide a pedagogical analysis of the core concepts of the effective equilibrium theory. First, we demonstrate the equivalence between observables computed using the Schwinger-Keldysh framework and the effective equilibrium approach, and relate the Green&#39;s functions in the two theoretical frameworks. Second, we expound some applications of this method in the context of interacting quantum impurity models. We introduce a novel framework to treat effects of interactions perturbatively while capturing the entire dependence on the bias voltage. For the sake of concreteness, we employ the Anderson model as a prototype for this scheme. Working at the particle-hole symmetric point, we investigate the fate of the Abrikosov-Suhl resonance as a function of bias voltage and magnetic field.

preprint2010arXiv

Imaginary-time formulation of steady-state nonequilibrium in quantum dot models

We examine the recently proposed imaginary-time formulation for strongly correlated steady-state nonequilibrium for its range of validity and discuss significant improvements in the analytic continuation of the Matsubara voltage as well as the fermionic Matsubara frequency. The discretization error in the conventional Hirsch-Fye algorithm has been compensated in the Fourier transformation with reliable small frequency behavior of self-energy. Here we give detailed discussions for generalized spectral representation ansatz by including high order vertex corrections and its numerical analytic continuation procedures. The differential conductance calculations agree accurately with existing data from other nonequilibrium transport theories. It is verified that, at finite source-drain voltage, the Kondo resonance is destroyed at bias comparable to the Kondo temperature. Calculated coefficients in the scaling relation of the zero bias anomaly fall within the range of experimental estimates.

preprint2009arXiv

Nonequilibrium electron transport in strongly correlated molecular junctions

We investigate models of molecular junctions which constitute minimal Hamiltonians to account for zero-bias-anomaly and the satellite features of inelastic transport by molecular phonons. Through nonlinear transport calculations with the imaginary-time nonequilibrium formalism, a HOMO-LUMO model with Anderson-Holstein interaction is shown to produce co-tunneling conductance peak in the vicinity of Kondo resonance which is mediated by a re-emergent many-body resonance assisted by phonon excitations at bias equal to the phonon frequency. Destruction of the resonance leads to negative-differential-resistance in the sequential tunneling regime.