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Igor Zutic

Igor Zutic appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.supr-concond-mat.stat-mechcond-mat.str-elphysics.optics

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Published work

15 published item(s)

preprint2022arXiv

Fusion of Majorana Bound States with Mini-Gate Control in Two-Dimensional Systems

A hallmark of topological superconductivity is the non-Abelian statistics of Majorana bound states (MBS), its chargeless zero-energy emergent quasiparticles. The resulting fractionalization of a single electron, stored nonlocally as a two spatially-separated MBS, provides a powerful platform for implementing fault-tolerant topological quantum computing. However, despite intensive efforts, experimental support for MBS remains indirect and does not probe their non-Abelian statistics. Here we propose how to overcome this obstacle in mini-gate controlled planar Josephson junctions (JJs) and demonstrate non-Abelian statistics through MBS fusion, detected by charge sensing using a quantum point contact, based on dynamical simulations. The feasibility of preparing, manipulating, and fusing MBS in two-dimensional (2D) systems is supported in our experiments which demonstrate the gate control of topological transition and superconducting properties with five mini gates in InAs/Al-based JJs. While we focus on this well-established platform, where the topological superconductivity was already experimentally detected, our proposal to identify elusive non-Abelian statistics motivates also further MBS studies in other gate-controlled 2D systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Localized Excitons in NbSe$_2$-MoSe$_2$ Heterostructures

Neutral and charged excitons (trions) in atomically-thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly-efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe$_2$ - MoSe$_2$ vdW heterostructures, which provide an important model system to study metal-semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy we discover a sharp emission feature, L1, that is localized at the NbSe$_2$-capped regions of MoSe$_2$. L1 is observed at energies below the commonly-studied MoSe$_2$ excitons and trions, and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. Remarkably, L1 is very robust not just in different samples, but also under a variety of fabrication processes. Using first-principles calculations we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe$_2$ and NbSe$_2$ - MoSe$_2$ heterostructure. We discuss the implications of our studies for atomically-thin optoelectronics devices with atomically-sharp interfaces and tunable electronic structures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Phase Control of Majorana Bound States in a Topological X Junction

Topological superconductivity supports exotic Majorana bound states (MBS) which are chargeless zero-energy emergent quasiparticles. With their non-Abelian exchange statistics and fractionalization of a single electron stored nonlocally as a spatially separated MBS, they are particularly suitable for implementing fault-tolerant topological quantum computing. While the main efforts to realize MBS have focused on one-dimensional systems, the onset of topological superconductivity requires delicate parameter tuning and geometric constraints pose significant challenges for their control and demonstration of non-Abelian statistics. To overcome these challenges, building on recent experimental advances in planar Josephson junctions (JJs), we propose a MBS platform of X-shaped JJs. This versatile implementation reveals how external flux control of the superconducting phase difference can generate and manipulate multiple MBS pairs to probe non-Abelian statistics. The underlying topological superconductivity exists over a large parameter space, consistent with materials used in our fabrication of such X junctions, as an important step towards scalable topological quantum computing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Resonant Tunneling Anisotropic Magnetoresistance Induced by Magnetic Proximity

We reveal that the interplay between Rashba spin-orbit coupling and proximity-induced magnetization in a two-dimensional electron gas leads to peculiar transport properties and large anisotropy of magnetoresistance. While the related tunneling anisotropic magnetoresistance (TAMR) has been extensively studied before, we predict an effect with a different origin arising from the evolution of a resonant condition with the in-plane rotation of magnetization and having a much larger magnitude. The resonances in the tunneling emerge from a spin-parity-time symmetry of the scattering states. However, such a symmetry is generally absent from the system itself and only appears for certain parameter values. Without resonant behavior in the topological surface states of a proximitized three-dimensional topological insulator (TI), TAMR measurements can readily distinguish them from often misinterpreted trivial Rashba-like states inherent to many TIs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact

We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

What Makes Effective Gating Possible in Two-Dimensional Heterostructures?

Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects, inherent quantum properties of gating provide opportunities for intriguing modification of materials and unexplored devices. Using first-principles calculations for Co/bilayer graphene, Co/BN, and Co/benzene, as well as a simple physical model, we show that magnetic heterostructures with two-dimensional layered materials can manifest tunable magnetic proximity effects. van der Waals bonding is identified as a requirement for large electronic structure changes by gating. In particular, the magnitude and sign of spin polarization in physisorbed graphene can be controlled by gating, which is important for spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Comment on "Unified Formalism of Andreev Reflection at a Ferromagnet/Superconductor Interface" by T.Y. Chen, et al

A recent paper of Chen et al. claims to have derived an allegedly previously unavailable "unified" Andreev Reflection (AR) formalism for an arbitrary spin polarization P that recovers earlier results as its special limits. In this Comment we show that, contrary to this claim, there are numerous works correctly solving the problem formulated in this paper for an arbitrary P, while Chen et al formulas fail to correctly incorporate P \neq 0 effects and violate basic physical principles.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic anisotropies of quantum dots

Magnetic anisotropies in quantum dots (QDs) doped with magnetic ions are discussed in terms of two frameworks: anisotropic $g$-factors and magnetocrystalline anisotropy energy. It is shown that even a simple model of zinc-blende p-doped QDs displays a rich diagram of magnetic anisotropies in the QD parameter space. Tuning the confinement allows to control magnetic easy axes in QDs in ways not available for the better-studied bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tailoring Chirp in Spin-Lasers

The usefulness of semiconductor lasers is often limited by the undesired frequency modulation, or chirp, a direct consequence of the intensity modulation and carrier dependence of the refractive index in the gain medium. In spin-lasers, realized by injecting, optically or electrically, spin-polarized carriers, we elucidate paths to tailoring chirp. We provide a generalized expression for chirp in spin-lasers and introduce modulation schemes that could simultaneously eliminate chirp and enhance the bandwidth, as compared to the conventional (spin-unpolarized) lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Reconfigurable nanoelectronics using graphene based spintronic logic gates

This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet material system. We use network search engines as a technology demonstration vehicle and present a spin-based circuit design with smaller area, faster speed, and lower energy consumption than the state-of-the-art CMOS counterparts. This design can also be applied in applications such as data compression, coding and image recognition. In the proposed scheme, over 100 spin-based logic operations are carried out before any need for a spin-charge conversion. Consequently, supporting CMOS electronics requires little power consumption. The spintronic-CMOS integrated system can be implemented on a single 3-D chip. These nonvolatile logic circuits hold potential for a paradigm shift in computing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Silicon spin communication

Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on modulating spin polarization of a constant current in silicon wires. We provide figures of merit for this scheme by studying spin relaxation and drift-diffusion models in silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin Modulation in Semiconductor Lasers

We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal analyses, we elucidate how the spin modulation in semiconductor lasers can improve performance, as compared to the conventional (spin-unpolarized) counterparts. We reveal that the spin-polarized injection can lead to an enhanced bandwidth and desirable switching properties of spin-lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Superconducting proximity effects in metals with a repulsive pairing interaction

Studies of the superconducting proximity effect in normal conductor/superconductor $(N/S)$ junctions almost universally assume no effective electron-electron coupling in the $N$ region. While such an approximation leads to a simple description of the proximity effect, it is unclear how it could be rigorously justified. We reveal a much more complex picture of the proximity effect in $N/S$ bilayers, where $S$ is a clean s-wave BCS superconductor and $N$ is a simple metal with a repulsive effective electron coupling. We elucidate the proximity effect behavior using a highly accurate method to self-consistently solve the Bogoliubov-deGennes equations. We present our results for a wide range of values of the interface scattering, the Fermi wave vector mismatch, the temperature, and the ratio $g$ of the effective interaction strengths in the $N$ and $S$ region. We find that the repulsive interaction, represented by a negative $g$, strongly alters the signatures of the proximity effect as can be seen in the spatial dependence of the Cooper pair amplitude and the pair potential, as well as in the local density of states near the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Thermodynamics of carrier-mediated magnetism in semiconductors

We propose a model of carrier-mediated ferromagnetism in semiconductors that accounts for the temperature dependence of the carriers. The model permits analysis of the thermodynamic stability of competing magnetic states, opening the door to the construction of magnetic phase diagrams. As an example we analyze the stability of a possible reentrant ferromagnetic semiconductor, in which increasing temperature leads to an increased carrier density, such that the enhanced exchange coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Theory of spin-polarized transport in semiconductor heterojunctions: Proposal for spin injection and detection in silicon

Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their operation by developing a model for spin-polarized transport across a heterojunction. We find that equilibrium spin polarization of holes leads to a strong modification of the spin and charge dynamics of electrons, and we show how the symmetry properties of the charge current can be exploited to detect spin injection in silicon using currently available techniques.

0 citations0 reviewsNo code linkedOpen access