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Researcher profile

R. Baquero

R. Baquero contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.othercond-mat.supr-con

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Published work

7 published item(s)

preprint2015arXiv

Effects of Pb doping on structural and electronics properties of Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$

Pb doping effect in the Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$ compound (Bi2223) on the structural and electronic properties were investigated, using the Local Density (LDA) and Virtual Crystal (VCA) approximations within the framework of the Density Functional Theory (DFT), taking as reference the procedure implemented by H.Lin {\it et al.} in the Bi2212 compound [{\it Phys. Rev. Lett.} {\bf 96} (2006) 097001]. Results show that, the incorporation of Pb-dopant in Bi2223 lead a rigid displacement of the Bi/Pb-O bands toward higher energies, with a null contribution at the Fermi level, around the high symmetry point $\overline{\text{M}}$ in the irreducible Brillouin zone, for Pb doping concentration equal to or more than 26\%, avoiding the presence of the so-called Bi-O {\it pockets} in the Fermi surface, in good agreement with angle-resolved photoemission spectroscopy (ARPES) and nuclear magnetic resonance (NMR) experiments, although a slight metallic character of the Bi-O bonds is still observed which would disagree with some experimental reports. The calculations show that the changes on the structural properties are associated to the presence or absence of the Bi-O {\it pockets} in the Fermi surface

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preprint2013arXiv

Detailed analysis of the Bi-O pockets problem in $Bi_2Sr_2Ca_2Cu_3O_{10}$

The Bi-O pockets problem, namely, the appearance in theoretical ab initio calculations of the electronic band structure of Bi-cuprates of a pocket of states at the Fermi energy ($E_F$) that is attributed to states belonging to the Bi-O plane is an issue that still calls for more study. The Bi-O pockets are in contradiction with experiments. We have investigated the possible reasons for the disagreement. We checked that by using the experimental lattice and internal parameters without any optimization procedure, the Bi-O pockets do not appear at $E_F$ in agreement with experiment. Nevertheless, as pointed out by R. Kouba et al. [{\em Phys. Rev. B} {\bf 60}, 9321 (1999)] optimization is compulsory to a band structure calculation that will describe appropriately the electronic properties. But starting with the experimental parameters a further optimization procedure previous to the actual ab initio calculation leads to the Bi-O pockets. Doping with 25% of Pb they disappear. From the several configurations that we have considered, we found two very simple ways in which the Bi-O pockets disappear without avoiding an optimization procedure previous to the calculation and without including a doping of any kind. In this paper, we report the effect of the slight displacement of the oxygen atom associated to the Sr-plane (O3) in the electronic properties of $Bi_2Sr_2Ca_2Cu_3O_{10}$ (Bi-2223) with tetragonal structure ($I4/mmm$) using the Local Density Approximation (LDA). The slight displacement is performed after the system has been optimized. We determined the intervals of the O3 atomic positions for which calculations of the band structures show that the Bi-O bands emerge towards higher energies in agreement with the experimental results, thereby solving the Bi-O pockets problem (continue).

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preprint2013arXiv

Performance of the modified Becke-Johnson potential

Very recently, in the 2011 version of the Wien2K code, the long standing shortcome of the codes based on Density Functional Theory, namely, its impossibility to account for the experimental band gap value of semiconductors, was overcome. The novelty is the introduction of a new exchange and correlation potential, the modified Becke-Johnson potential (mBJLDA). In this paper, we report our detailed analysis of this recent work. We calculated using this code, the band structure of forty one semiconductors and found an important improvement in the overall agreement with experiment as Tran and Blaha [{\em Phys. Rev. Lett.} 102, 226401 (2009)] did before for a more reduced set of semiconductors. We find, nevertheless, within this enhanced set, that the deviation from the experimental gap value can reach even much more than 20%, in some cases. Furthermore, since there is no exchange and correlation energy term from which the mBJLDA potential can be deduced, a direct optimization procedure to get the lattice parameter in a consistent way is not possible as in the usual theory. These authors suggest that a LDA or a GGA optimization procedure is used previous to a band structure calculation and the resulting lattice parameter introduced into the 2011 code. This choice is important since small percentage differences in the lattice parameter can give rise to quite higher percentage deviations from experiment in the predicted band gap value.

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preprint2013arXiv

The band gap problem: the accuracy of the Wien2k code confronted

This paper is a continuation of our detailed study [Phys. Rev. B 86, 195106 (2012)] of the performance of the recently proposed modified Becke-Jonhson potential (mBJLDA) within the known Wien2k code. From the 41 semiconductors that we have considered in our previous paper to compute the band gap value, we selected 27 for which we found low temperature experimental data in order to pinpoint the relative situation of the newly proposed Wien2k(mBJLDA) method as compared to other methods in the literature. We found that the GWA gives the most accurate predictions. The Wien2k (mBJLDA) code is slightly less precise, in general. The Hybrid functionals are less accurate, on the overall. The GWA is definitely the most precise existing method nowadays. In 88% of the semiconductors considered the error was less than 10%. Both, the GWA and the mBJLDA potential, reproduce the band gap of 15 of the 27 semiconductors considered with a 5% error or less. An extra factor to be taken into account is the computational cost. If one would seek for precision without taking this factor into account, the GWA is the method to use. If one would prefer to sacrifice a little the precision obtained against the savings in computational cost, the empirical mBJLDA potential seems to be the appropriate method. We include a graph that compares directly the performance of the best three methods, according to our analysis, for each of the 27 semiconductors studied. The situation is encouraging but the problem is not yet a closed issue.

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preprint2013arXiv

The modified Becke-Johnson potential analyzed

Recently in the Wien2k code, the modified Becke-Johnson potential (mBJLDA) was implemented. As the authors [{\em Phys.Rev.Lett.} 102, 226401 (2009)] point, this potential reproduces the band gap of semiconductors with improved accuracy. In this paper we present our analysis of this potential in two directions. First, we checked whether this potential reproduces the band structure for metals, an analysis that lacked in the literature. We calculated the band gap of a group of semiconductors. We observed that the Linear Density Approximation (LDA) give rise to a shorter lattice constant as compared to experiment. The Generalized Gradient Approximation behaves oppositely. Using the average, $a_{Avg}$, in the mBJLDA potential, we obtained a closer to experiment value for the gap. We conclude that the new mBJLDA potential represent an important improvement as compared to the results from the previous version of the Wien2k code. Also the mBJLDA potential can be a very useful tool for the theoretical study of complex systems containing semiconductor compounds such as surfaces, superlattices and interfaces.

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preprint2012arXiv

Metallic behavior at YBaCuO7/ZAs interfaces (Z=Ga, Al)

We present the electronic band structure of the interfaces $YBa_2Cu_3O_7/GaAs$ (direct gap) and $YBa_2Cu_3O_7/AlAs$ (indirect gap) in different configurations calculated using the Density Functional Theory as in the Wien2k code within the local density approximation. We have projected the density of states at the atomic layers forming the interface. We concentrated in the semiconductor side. The two first atomic layers in the semiconductor side of the interface present a clear metallic behavior. We found for both semiconductors considered that it converges towards the bulk atomic-layer projected density of states at the fifth atomic layer from the interface. We considered an ideal non-reconstructed interface in the (001) direction in this work. This behavior is interesting and could be used in several technological applications.

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preprint2010arXiv

Processing and study of the composite CdS/Bi-Pb-Sr-Ca-Cu-O

We have fabricated and characterized samples of the superconducting- semiconducting Bi-Pb-Sb-Sr-Ca-Cu-O/CdS composite. Nano-size particles of CdS were deposited and introduced into the porosities of the Bi-Pb-Sb-Sr-Ca-Cu-O material by the spray pyrolysis technique. The morphology and hollow size in the porous superconducting material as well as the grain size in CdS and the morphology of the surface of the composite were obtained by Scanning Electron Microscopy. We obtained the critical superconducting temperature of both the Bi-Pb-Sb-Sr-Ca-Cu-O and the Bi-Pb-Sb-Sr-Ca-Cu-O/CdS composite measuring the resistivity. Both show a metallic behaviour just above the superconducting transition. For the superconductor alone, resistivity starts falling at Tc,on sup = 99,9 K and reaches zero at Tc,sup=76,3 K. The behaviour of the composite is different. The transition starts at Tc,on comp = 65,3 K and reaches zero resistance at Tc,comp = 56,5 K. This seems to indicate that the semiconductor penetrates the whole superconducting Bi-Pb-Sb-Sr-Ca-Cu-O sample so that there is no region of pure superconducting material left. Since the materials do not actually mix (see text) the behaviour might be attributable to the interface. Also the resistivity curves present a very interesting feature, i.e., below the temperature at which the composite attains zero-resistivity, a re-entrant behaviour manifests itself and a finite resistivity peak appears. It increases to a certain value to drop back to zero at some temperature below. We comment further on this feature in the text.

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