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J. A. Camargo-Martínez

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Published work

5 published item(s)

preprint2020arXiv

The higher superconducting transition temperature T$_c$ and the functional derivative of T$_c$ with $α^2F(ω)$ for electron-phonon superconductors

This work presents an analysis of the functional derivative of the superconducting transition temperature T$_c$ with respect to the electron-phonon coupling function $α^2F(ω)$ [$δT_c/δα^2$F($ω$)] and $α^2F(ω)$ spectrum of H$_3$S ($Im\bar3m$), in the pressure range where the high-T$_c$ was measured (155-225 GPa). The calculations are done in the framework of the Migdal-Eliashberg theory. We find for this electron-phonon superconductor, a correlation between the maximums of $δT_c/δα^2$F($ω$) and $α^2F(ω)$ with its higher T$_c$. We corroborate this behavior in other electron-phonon superconductors by analyzing data available in the literature, which suggests its validity in this type of superconductors. The correlation observed could be considered as a theoretical tool that in an electron-phonon superconductor, allows describing qualitatively the proximity to its highest T$_c$, and determining the optimal physical conditions (pressure, alloying or doping concentration) that lead to the superconductor reaching its highest T$_c$ possible.

preprint2019arXiv

Effects of Ba doping on the structural and electronic properties of La$_{2-x}$Ba$_x$CuO$_4$

The structural and electronic properties of La$_{2-x}$Ba$_x$CuO$_4$ were investigated as a function of Ba-concentration $0 \leq x \leq 1.2$, within the virtual crystal approximation (VCA) by means of first-principles total-energy calculations. We found Ba doping induces a quasi-rigid displacement of Cu d$_{x^{2}-y^{2}}$ and d$_{z^{2}}$ bands toward higher energies. This effect generates important changes in the Fermi surface topology, which manage to imitate the ARPES momentum distribution map (MDM) measurements and tight-binding calculations recently reported for doped La-based cuprates. The calculations exhibit the significant increase in the contribution of Cu d$_{z^{2}}$ states at the Fermi level for greater Ba doping content to 0.3, which has effects on orbital hybridisation with Cu d$_{x^{2}-y^{2}}$ states and therefore in the suppression of the superconducting state. For this Ba doping range, no magnetism was found.

preprint2015arXiv

Effects of Pb doping on structural and electronics properties of Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$

Pb doping effect in the Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10}$ compound (Bi2223) on the structural and electronic properties were investigated, using the Local Density (LDA) and Virtual Crystal (VCA) approximations within the framework of the Density Functional Theory (DFT), taking as reference the procedure implemented by H.Lin {\it et al.} in the Bi2212 compound [{\it Phys. Rev. Lett.} {\bf 96} (2006) 097001]. Results show that, the incorporation of Pb-dopant in Bi2223 lead a rigid displacement of the Bi/Pb-O bands toward higher energies, with a null contribution at the Fermi level, around the high symmetry point $\overline{\text{M}}$ in the irreducible Brillouin zone, for Pb doping concentration equal to or more than 26\%, avoiding the presence of the so-called Bi-O {\it pockets} in the Fermi surface, in good agreement with angle-resolved photoemission spectroscopy (ARPES) and nuclear magnetic resonance (NMR) experiments, although a slight metallic character of the Bi-O bonds is still observed which would disagree with some experimental reports. The calculations show that the changes on the structural properties are associated to the presence or absence of the Bi-O {\it pockets} in the Fermi surface

preprint2013arXiv

Detailed analysis of the Bi-O pockets problem in $Bi_2Sr_2Ca_2Cu_3O_{10}$

The Bi-O pockets problem, namely, the appearance in theoretical ab initio calculations of the electronic band structure of Bi-cuprates of a pocket of states at the Fermi energy ($E_F$) that is attributed to states belonging to the Bi-O plane is an issue that still calls for more study. The Bi-O pockets are in contradiction with experiments. We have investigated the possible reasons for the disagreement. We checked that by using the experimental lattice and internal parameters without any optimization procedure, the Bi-O pockets do not appear at $E_F$ in agreement with experiment. Nevertheless, as pointed out by R. Kouba et al. [{\em Phys. Rev. B} {\bf 60}, 9321 (1999)] optimization is compulsory to a band structure calculation that will describe appropriately the electronic properties. But starting with the experimental parameters a further optimization procedure previous to the actual ab initio calculation leads to the Bi-O pockets. Doping with 25% of Pb they disappear. From the several configurations that we have considered, we found two very simple ways in which the Bi-O pockets disappear without avoiding an optimization procedure previous to the calculation and without including a doping of any kind. In this paper, we report the effect of the slight displacement of the oxygen atom associated to the Sr-plane (O3) in the electronic properties of $Bi_2Sr_2Ca_2Cu_3O_{10}$ (Bi-2223) with tetragonal structure ($I4/mmm$) using the Local Density Approximation (LDA). The slight displacement is performed after the system has been optimized. We determined the intervals of the O3 atomic positions for which calculations of the band structures show that the Bi-O bands emerge towards higher energies in agreement with the experimental results, thereby solving the Bi-O pockets problem (continue).

preprint2013arXiv

The band gap problem: the accuracy of the Wien2k code confronted

This paper is a continuation of our detailed study [Phys. Rev. B 86, 195106 (2012)] of the performance of the recently proposed modified Becke-Jonhson potential (mBJLDA) within the known Wien2k code. From the 41 semiconductors that we have considered in our previous paper to compute the band gap value, we selected 27 for which we found low temperature experimental data in order to pinpoint the relative situation of the newly proposed Wien2k(mBJLDA) method as compared to other methods in the literature. We found that the GWA gives the most accurate predictions. The Wien2k (mBJLDA) code is slightly less precise, in general. The Hybrid functionals are less accurate, on the overall. The GWA is definitely the most precise existing method nowadays. In 88% of the semiconductors considered the error was less than 10%. Both, the GWA and the mBJLDA potential, reproduce the band gap of 15 of the 27 semiconductors considered with a 5% error or less. An extra factor to be taken into account is the computational cost. If one would seek for precision without taking this factor into account, the GWA is the method to use. If one would prefer to sacrifice a little the precision obtained against the savings in computational cost, the empirical mBJLDA potential seems to be the appropriate method. We include a graph that compares directly the performance of the best three methods, according to our analysis, for each of the 27 semiconductors studied. The situation is encouraging but the problem is not yet a closed issue.