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Quinn Campbell

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Reaction pathways of BCl $_3$ for acceptor delta-doping of silicon

BCl $_3$ is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precursor. Here, we use density functional theory and scanning tunneling microscopy (STM) to identify and explore these pathways for BCl $_3$ on Si(100) at different annealing temperatures. We demonstrate that BCl $_3$ adsorbs selectively without a reaction barrier, and subsequently dissociates relatively easily with reaction barriers $\approx$ 1 eV. Using this dissociation pathway, we parameterize a Kinetic Monte Carlo model to predict B incorporation rates as a function of dosing conditions. STM is used to image BCl $_{3}$ adsorbates, identifying several surface configurations and tracking the change in their distribution as a function of the annealing temperature, matching predictions of the kinetic model well. This straightforward pathway for atomic-precision acceptor doping helps enable a wide range of applications including bipolar nanoelectronics, acceptor-based qubits, and superconducting Si.

preprint2022arXiv

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$ 1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH $_3$ dissociation leading to P incorporation on Si(100)-2 $\times$ 1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2 $\times$ 3 silicon dimers, the probability that at least one donor incorporates is nearly unity. We also examine the impact of size of the lithographic window, finding that the incorporation fraction saturates to $δ$ -layer like coverage as the circumference-to-area ratio approaches zero. We predict that this incorporation fraction depends strongly on the dosage of the precursor, and that the standard deviation of the number of incorporations scales as $\sim \sqrt{n}$ , as would be expected for a series of largely independent incorporation events. Finally, we characterize an array of experimentally prepared multi-donor lithographic windows and use our kinetic model to study variability due to the observed lithographic roughness, predicting a negligible impact on incorporation statistics. We find good agreement between our model and the inferred incorporation in these windows from scanning tunneling microscope measurements, indicating the robustness of atomic-precision advanced manufacturing to errors in patterning for multi-donor patches.

preprint2021arXiv

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2 $\times$ 1

Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B $_2$ H $_6$ ), boron trichloride (BCl $_3$ ), and aluminum trichloride in both monomer (AlCl $_3$ ) and dimer forms (Al $_2$ Cl $_6$ ), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 $^{\circ}$ C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices.

preprint2021arXiv

The impact of stochastic incorporation on atomic-precision Si:P arrays

Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$ 1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.

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Quinn Campbell

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4 publications

Reaction pathways of BCl $_3$ for acceptor delta-doping of silicon

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2 $\times$ 1

The impact of stochastic incorporation on atomic-precision Si:P arrays

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Quinn Campbell

Research overview

Is this your work?

4 publications

Reaction pathways of BCl3_33​ for acceptor delta-doping of silicon

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2×\times×1

The impact of stochastic incorporation on atomic-precision Si:P arrays

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Building this map preview

Reaction pathways of BCl $_3$ for acceptor delta-doping of silicon

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2 $\times$ 1