BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Andrew D. Baczewski

Andrew D. Baczewski contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
7works
0followers
3topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2022arXiv

First-principles simulation of light-ion microscopy of graphene

The extreme sensitivity of 2D materials to defects and nanostructure requires precise imaging techniques to verify presence of desirable and absence of undesirable features in the atomic geometry. Helium-ion beams have emerged as a promising materials imaging tool, achieving up to 20 times higher resolution and 10 times larger depth-of-field than conventional or environmental scanning electron microscopes. Here, we offer first-principles theoretical insights to advance ion-beam imaging of atomically thin materials by performing real-time time-dependent density functional theory simulations of single impacts of 10-200 keV light ions in free-standing graphene. We predict that detecting electrons emitted from the back of the material (the side from which the ion exits) would result in up to 3 times higher signal and up to 5 times higher contrast images, making 2D materials especially compelling targets for ion-beam microscopy. We also find that the charge induced in the graphene equilibrates on a sub-fs time scale, leading to only slight disturbances in the carbon lattice that are unlikely to damage the atomic structure for any of the beam parameters investigated here.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Precision tomography of a three-qubit donor quantum processor in silicon

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Reaction pathways of BCl$_3$ for acceptor delta-doping of silicon

BCl$_3$ is a promising candidate for atomic-precision acceptor doping in Si, but optimizing the electrical properties of structures created with this technique requires a detailed understanding of adsorption and dissociation pathways for this precursor. Here, we use density functional theory and scanning tunneling microscopy (STM) to identify and explore these pathways for BCl$_3$ on Si(100) at different annealing temperatures. We demonstrate that BCl$_3$ adsorbs selectively without a reaction barrier, and subsequently dissociates relatively easily with reaction barriers $\approx$1 eV. Using this dissociation pathway, we parameterize a Kinetic Monte Carlo model to predict B incorporation rates as a function of dosing conditions. STM is used to image BCl$_{3}$ adsorbates, identifying several surface configurations and tracking the change in their distribution as a function of the annealing temperature, matching predictions of the kinetic model well. This straightforward pathway for atomic-precision acceptor doping helps enable a wide range of applications including bipolar nanoelectronics, acceptor-based qubits, and superconducting Si.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Atomic-precision advanced manufacturing enables the placement of dopant atoms within $\pm$1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH$_3$ dissociation leading to P incorporation on Si(100)-2$\times$1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2$\times$3 silicon dimers, the probability that at least one donor incorporates is nearly unity. We also examine the impact of size of the lithographic window, finding that the incorporation fraction saturates to $δ$-layer like coverage as the circumference-to-area ratio approaches zero. We predict that this incorporation fraction depends strongly on the dosage of the precursor, and that the standard deviation of the number of incorporations scales as $\sim \sqrt{n}$, as would be expected for a series of largely independent incorporation events. Finally, we characterize an array of experimentally prepared multi-donor lithographic windows and use our kinetic model to study variability due to the observed lithographic roughness, predicting a negligible impact on incorporation statistics. We find good agreement between our model and the inferred incorporation in these windows from scanning tunneling microscope measurements, indicating the robustness of atomic-precision advanced manufacturing to errors in patterning for multi-donor patches.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1

Stochastic incorporation kinetics can be a limiting factor in the scalability of semiconductor fabrication technologies using atomic-precision techniques. While these technologies have recently been extended from donors to acceptors, the extent to which kinetics will impact single-acceptor incorporation has yet to be assessed. We develop and apply an atomistic model for the single-acceptor incorporation rates of several recently demonstrated precursor molecules: diborane (B$_2$H$_6$), boron trichloride (BCl$_3$), and aluminum trichloride in both monomer (AlCl$_3$) and dimer forms (Al$_2$Cl$_6$), to identify the acceptor precursor and dosing conditions most likely to yield deterministic incorporation. While all three precursors can achieve single-acceptor incorporation, we predict that diborane is unlikely to achieve deterministic incorporation, boron trichloride can achieve deterministic incorporation with modest heating (50 $^{\circ}$C), and aluminum trichloride can achieve deterministic incorporation at room temperature. We conclude that both boron and aluminum trichloride are promising precursors for atomic-precision single-acceptor applications, with the potential to enable the reliable production of large arrays of single-atom quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The impact of stochastic incorporation on atomic-precision Si:P arrays

Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within $\sim$1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63 \pm 10\%$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Coherent electrical control of a single high-spin nucleus in silicon

Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied upon transducing electric signals into magnetic fields via the electron-nuclear hyperfine interaction, which severely affects the nuclear coherence. Here we demonstrate the coherent quantum control of a single antimony (spin-7/2) nucleus, using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea first proposed in 1961 but never realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction, in the presence of lattice strain, results in coherent nuclear spin transitions. The spin dephasing time, 0.1 seconds, surpasses by orders of magnitude those obtained via methods that require a coupled electron spin for electrical drive. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields.

0 citations0 reviewsNo code linkedOpen access